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Std ID |
Description (Standard Title) |
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GB/T 20228-2021
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Gallium arsenide single crystal
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GB/T 11094-2020
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Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method
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GB/T 36706-2018
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Polycrystalline indium phosphide
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GB/T 37053-2018
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General specification for epitaxial wafers and substrates based on gallium nitride
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GB/T 35308-2017
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Epitaxial wafers of germanium based Ⅲ-Ⅴ compounds for solar cell
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GB/T 35305-2017
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Monocrystalline gallium arsenide polished wafers for solar cell
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GB/T 30652-2014
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Trichlorosilane for silicon epitaxial
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GB/T 30656-2014
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Polished monocrystalline silicon carbide wafers
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GB/T 30854-2014
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Gallium nitride based epitaxial layer for LED lighting
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GB/T 30855-2014
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GaP substrates for LED epitaxial chips
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GB/T 30856-2014
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GaAs substrates for LED epitaxial chips
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GB/T 30858-2014
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Polished mono-crystalline sapphire substrate product
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GB/T 30866-2014
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Test method for measuring diameter of monocrystalline silicon carbide wafers
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GB/T 30867-2014
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Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
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GB/T 30868-2014
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Test method for measuring micropipe density of monocrystalline silicon carbide wafer -- Chemically etching
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GB/T 31092-2014
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Monocrystalline sapphire ingot
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GB/T 11072-2009
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Indium antimonide polycrystal, single crystals and as-cut slices
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GB/T 11093-2007
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Liquid encapsulated Czochralski-grown gallium arsenide single crystals and as-cut slices
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GB/T 11094-2007
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Horizontal Bridgman grown gallium arsenide single crystal and cutting wafer
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GB/T 20228-2006
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Gallium arsenide single crystal
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GB/T 20229-2006
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Gallium phosphide single crystal
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GB/T 20230-2006
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Indium phosphide single crystal
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GB/T 17170-1997
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Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
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GB/T 17169-1997
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Test method for the surface quality of polished silicon wafers and epitaxial wafers by optical-reflection
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GB/T 15615-1995
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Test method for measuring flexture strength of silicon slices
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GB/T 25074-2025
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Solar-grade polycrystalline silicon
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GB/T 44334-2024
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Silicon epitaxial wafers with buried layers
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GB/T 35307-2023
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Granular polysilicon produced by fluidized bed method
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GB/T 26069-2022
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Annealed monocrystalline silicon wafers
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GB/T 41325-2022
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Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit
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GB/T 41652-2022
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Silicon electrode and silicon ring for plasma etching machine
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GB/T 12963-2022
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Electronic-grade polycrystalline silicon
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GB/T 40561-2021
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Photovoltaic silicon material - Determination of oxygen - Pulse heating inert gas fusion infrared absorption method
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GB/T 40566-2021
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Granular polysilicon produced by fluidized bed method - Determination of hydrogen - Pulse heating inert gas fusion infrared absorption method
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GB/T 14139-2019
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Silicon epitaxial wafers
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GB/T 29054-2019
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Casting multi-crystalline silicon brick for photovoltaic solar cell
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GB/T 29055-2019
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Multicrystalline Silicon Wafers for Photovoltaic Solar Cell
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GB/T 5238-2019
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Monocrystalline germanium and monocrystalline germanium slices
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GB/T 12964-2018
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Monocrystalline silicon polished wafers
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GB/T 12965-2018
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Monocrystalline silicon as cut wafers and lapped wafers
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GB/T 25076-2018
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Monocrystalline silicon for solar cell
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GB/T 26071-2018
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Monocrystalline silicon wafers for solar cells
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GB/T 25074-2017
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Solar-grade polycrystalline silicon
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GB/T 35307-2017
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Granular polysilicon produced by fluidized bed method
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GB/T 35310-2017
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200 mm silicon epitaxial wafer
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GB/T 32573-2016
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Silicon powder -- Determination of total carbon content -- Infrared absorption method after combustion in an induction furnace
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GB/T 32651-2016
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Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
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GB/T 12962-2015
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Monocrystalline silicon
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GB/T 31854-2015
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Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
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GB/T 12963-2014
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Electronic-grade polycrystalline silicon
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GB/T 30861-2014
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Germanium substrate for solar cell
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GB/T 29504-2013
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300 mm monocrystalline silicon
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GB/T 29506-2013
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300 mm polished monocrystalline silicon wafers
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GB/T 29508-2013
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300mm monocrystalline silicon as cut slices and grinded slices
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GB/T 29849-2013
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Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
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GB/T 29850-2013
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Test method for measuring compensation degree of silicon materials used for photovoltaic applications
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GB/T 29851-2013
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Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
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GB/T 29852-2013
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Test method for measuring phosphorus, arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
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GB/T 29054-2012
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Solar-grade casting multi-crystalline silicon brick
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GB/T 29055-2012
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Multi-crystalline silicon wafer for solar cell
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GB/T 25074-2010
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Solar-grade polycrystalline silicon
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GB/T 26072-2010
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Germanium single crystal for solar cell
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GB/T 12963-2009
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Specification for polycrystalline silicon
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GB/T 14140-2009
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Test method for measuring diameter of semiconductor wafer
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GB/T 6620-2009
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Test method for measuring warp on silicon slices by noncontact scanning
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GB/T 11069-2006
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High purity germanium dioxide
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GB/T 11070-2006
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Reduced germanium ingot
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GB/T 11071-2006
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Zone-refined germanium ingot
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GB/T 12962-2005
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Monocrystalline silicon
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GB/T 12965-2005
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Monocrystalline silicon as cut slices and lapped slices
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GB/T 12964-2003
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Monocrystalline silicon polished wafers
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GB/T 19199-2003
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Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
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GB/T 16822-1997
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Test method for dielectric properties of dielectric crystal
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GB/T 12962-1996
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Monocrystalline silicon
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GB/T 12963-1996
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Polycrystalline silicon
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GB/T 12964-1996
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Monocrystalline silicon polished wafers
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GB/T 12965-1996
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Monocrystalline silicon as cut slices and lapped slices
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GB/T 15250-1994
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Test method for bulk acoustic wave attenuation of piezoelectric lithium niobate crystals
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GB/T 2881-1991
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Technical requirements for silicon metal
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GB/T 8646-1998
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Fine aluminum-1% silicon wire for semiconductor lend-bonding
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GB/T 8646-1988
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Aluminium-silicon (AISi 1) wire for semiconductor lead bonding
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GB/T 39149-2020
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Recycled tellurium material
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GB/T 39150-2020
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Recycled selenium material
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GB/T 2881-2014
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Silicon metal
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GB/T 2881-2008
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Silicon metal
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GB/T 15713-1995
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Monocrystalline germanium slices
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GB/T 5238-1995
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Monocrystalline germanium
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GB/T 14140.1-1993
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Silicon slices and wafers--Measuring of diameter--Optical projecting method
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GB/T 14145-1993
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Test method for stacking fault density of epitaxial layers of silicon by interference contrast microscopy
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GB/T 11070-1989
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Reduced germanium ingot
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GB/T 11071-1989
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Zone-refined germanium ingot
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GB/T 11072-1989
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Indium antimonide polycrystal, single crystals and as-cut slices
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GB/T 11093-1989
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Liquid encapaulated czochralski-grouwn gallium arsenide single crystals and As-cut slices
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GB/T 11094-1989
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Boat-grown gallium arsenide single crystals and As-cut slices
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GB/T 14264-2024
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Terminology of semiconductor materials
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GB/T 29057-2023
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Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
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GB/T 43612-2023
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Collection of metallographs on defects in silicon carbide crystal materials
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GB/T 16595-2019
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Specification for a Universal Wafer Grid
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GB/T 16596-2019
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Specification for establishing a wafer coordinate system
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GB/T 14844-2018
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Designations of semiconductor materials
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