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GB/T 30855-2014: GaP substrates for LED epitaxial chips
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| GB/T 30855-2014 | English | 299 |
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GaP substrates for LED epitaxial chips
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GB/T 30855-2014
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Basic data | Standard ID | GB/T 30855-2014 (GB/T30855-2014) | | Description (Translated English) | GaP substrates for LED epitaxial chips | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H83 | | Classification of International Standard | 29.045 | | Word Count Estimation | 13,125 | | Date of Issue | 7/24/2014 | | Date of Implementation | 4/1/2015 | | Quoted Standard | GB/T 191; GB/T 1555; GB/T 2828.1; GB/T 4326; GB/T 6616; GB/T 6618; GB/T 6620; GB/T 6621; GB/T 6624; GB/T 13387; GB/T 13388; GB/T 14140; GB/T 14264; GB/T 14844; GJB 3076-1997 | | Regulation (derived from) | National Standards Bulletin No. 19, 2014 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the LED epitaxial silicon single-crystal gallium phosphide substrate sheet (hereinafter referred to as substrate) requirements, test methods and marking, packaging, transportation, storage, quality certificate and purchase order (o | GB/T 30855-2014: GaP substrates for LED epitaxial chips---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
GaP substrates for LED epitaxial chips
ICS 29.045
H83
National Standards of People's Republic of China
LED epitaxial silicon substrate using gallium phosphide
Issued on. 2014-07-24
2015-04-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and materials Technical Committee (SAC/TC
203/SC2) jointly proposed and managed.
This standard is mainly drafted by. Semiconductors, Chinese Academy of Sciences, there are new research Photoelectric Material Co., Ltd., Yunnan Branch Xinyuan crystal material
Material Limited.
The main drafters of this standard. Zhao Youwen, mention Liu Wang, Linquan, Huifeng, Zhao strong.
LED epitaxial silicon substrate using gallium phosphide
1 Scope
This standard specifies the LED epitaxial silicon single-crystal gallium phosphide substrate sheet (hereinafter referred to as substrate) requirements, test methods and marks, package
Loading, transport, storage, quality certificate and purchase order (or contract) content.
This standard applies to single-crystal gallium phosphide substrate LED epitaxial chips.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 191 Packaging - Pictorial signs
GB/T 1555 to the measurement method of a semiconductor single crystal
GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan
GB/T 4326 extrinsic semiconductor single crystals Hall mobility and Hall coefficient measurements
GB/T 6616 and the semiconductor wafer resistivity silicon thin film layer resistance test method of non-contact eddy current method
GB/T 6618 wafer thickness and total thickness variation of test methods
GB/T 6620 wafer warpage non-contact test method
GB/T 6621 Test Method for wafer surface flatness
GB/T 6624 polished silicon surface quality by visual inspection
GB/T 13387 and other electronic materials silicon wafer reference surface length measurement method
GB/T 13388 wafer reference surface crystallographic orientation of the X-ray test method
GB/T 14140 wafer diameter measuring method
GB/T 14264 semiconductor material terms
GB/T 14844 semiconductor material grades that way
GJB3076-1997 gallium phosphide single chip specification
3 Terms and Definitions
Terms and definitions GB/T 14264 apply to this document defined.
4 Requirements
4.1 Classification
Gallium phosphide substrate divided by the conductivity type of n-type and p-type two types.
Grade 4.2
Gallium phosphide substrate grades that according to the provisions of GB/T 14844 of.
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