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GB/T 30854-2014: Gallium nitride based epitaxial layer for LED lighting
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Gallium nitride based epitaxial layer for LED lighting
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GB/T 30854-2014
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Basic data | Standard ID | GB/T 30854-2014 (GB/T30854-2014) | | Description (Translated English) | Gallium nitride based epitaxial layer for LED lighting | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H83 | | Classification of International Standard | 29.045 | | Word Count Estimation | 26,267 | | Date of Issue | 7/24/2014 | | Date of Implementation | 4/1/2015 | | Quoted Standard | GB/T 191; GB/T 2828.1; GB/T 4326; GB/T 6618; GB/T 6619; GB/T 6620; GB/T 13387; GB/T 14140; GB/T 14142; GB/T 14264; GB/T 14844; SJ/T 11399 | | Regulation (derived from) | National Standards Bulletin No. 19, 2014 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the use of LED light-emitting gallium nitride-based epitaxial wafers (hereinafter referred to as wafer) requirements, test methods and rules and signs, packaging, transportation, storage, quality certificate and purchase order (or | GB/T 30854-2014: Gallium nitride based epitaxial layer for LED lighting---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Gallium nitride based epitaxial layer for LED lighting
ICS 29.045
H83
National Standards of People's Republic of China
LED light with a gallium nitride-based epitaxial wafer
Issued on. 2014-07-24
2015-04-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and materials Technical Committee (SAC/TC
203/SC2) jointly proposed and managed.
This standard was drafted. Institute of Semiconductors.
The main drafters of this standard. Wei Xuecheng, Xia Zhao, Wang Junxi, Zeng Yiping, Li Jin Min, mention Liu Wang.
LED light with a gallium nitride-based epitaxial wafer
1 Scope
This standard specifies the use of LED light-emitting gallium nitride-based epitaxial wafers (hereinafter referred to as wafer) requirements, test methods and rules and signs,
Packaging, transportation, storage, quality certificate and purchase order (or contract) content.
This standard applies to LED light with a gallium nitride-based epitaxial wafer.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 191 Packaging - Pictorial signs
GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan
GB/T 4326 extrinsic semiconductor single crystals Hall mobility and Hall coefficient measurements
GB/T 6618 wafer thickness and total thickness variation of test methods
GB/T 6619 wafer curvature testing methods
GB/T 6620 wafer warpage non-contact test method
GB/T 13387 and other electronic materials silicon wafer reference surface length measurement method
GB/T 14140 wafer diameter measuring method
GB/T 14142 crystal silicon epitaxial layer etching integrity test method
GB/T 14264 semiconductor material terms
GB/T 14844 semiconductor material grades that way
SJ/T 11399 Test Method semiconductor diode chip
3 Terms and Definitions
Terms and definitions GB/T 14264 apply to this document defined.
4 Requirements
4.1 Classification
Including LED epitaxial wafers and epitaxial wafers by the whole structure is divided into n-type conductivity type and p-type gallium nitride are two types of single-wafer (epitaxial
The thickness exceeds 100μm commonly referred to as single-crystal gallium nitride).
Grade 4.2
Grades that epitaxial wafer in accordance with GB/T 14844 of.
4.3 Specifications
Diameter wafer is divided into Φ50.8mm, Φ76.2mm, Φ100mm, Φ150mm4 specifications, or agreed upon by both parties.
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