GB/T 12963-2009 (GB/T 12963-2022 Newer Version) PDF English
GB/T 12963-2009 (GB/T12963-2009, GBT 12963-2009, GBT12963-2009)
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Name of Chinese Standard | Status |
| GB/T 12963-2022 | English | 170 |
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Electronic-grade polycrystalline silicon
| Valid |
| GB/T 12963-2014 | English | 90 |
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Electronic-grade polycrystalline silicon
| Obsolete |
| GB/T 12963-2009 | English | 70 |
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Specification for polycrystalline silicon
| Obsolete |
| GB/T 12963-1996 | English | 239 |
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Polycrystalline silicon
| Obsolete |
| GB 12963-1991 | English | 199 |
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Polycrystalline silicon
| Obsolete |
Newer version: GB/T 12963-2022 Standards related to (historical): GB/T 12963-2022
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GB/T 12963-2009: PDF in English (GBT 12963-2009) GB/T 12963-2009
GB
NATIONAL STANDARD OF THE
PEOPLE’S REPUBLIC OF CHINA
ICS 29.045
H 82
Replacing GB/T 12963-1996
Specification for Polycrystalline Silicon
硅多晶
ISSUED ON. OCTOBER 30, 2009
IMPLEMENTED ON. JUNE 1, 2010
Issued by.
General Administration of Quality Supervision, Inspection
and Quarantine of the People’s Republic of China;
Standardization Administration of the People’s Republic of
China.
Table of Contents
Foreword ... 3
1 Scope ... 4
2 Normative references ... 4
3 Terms ... 5
4 Requirements ... 5
5 Testing Method ... 6
6 Inspection Rules ... 7
7 Mark, Package, Transportation and Storage ... 8
8 Content of Order ... 9
Foreword
This Standard modifies and adopts SEMI M16-1103.2003 “Specification for
Polycrystalline Silicon”. The main differences are as follows.
-- add the technical parameters, such as the grade requirements of phosphine
resistivity, boron resistivity, concentration of carbon as well as n-type minority
carrier lifetime;
-- add the size range requirements for polycrystalline silicon.
This Standard replaces GB/T 12963-1996 “Polycrystalline Silicon”.
Compared with GB/T 12963-1996, the main changes of this Standard are as follows.
-- revise the phosphine resistivity grades from 300Ω•cm, 200Ω•cm, 100Ω•cm to be
500Ω•cm, 300Ω•cm, 200Ω•cm;
-- add a term of oxide lamella.
This Standard was proposed by National Standardization Technical Committee for
Semiconductor Equipment and Materials.
This Standard shall be under the jurisdiction of Material Technical Committee of
National Standardization Technical Committee for Semiconductor Equipment and
Materials.
The drafting organization of this Standard. Emei Semiconductor Material Plant.
Main drafters of this Standard. Luo Liping, Zhang Huijian and Wang Yan.
The previous editions replaced by this Standard are as follows.
-- GB/T 12963-1991, GB/T 12963-1996.
Specification for Polycrystalline Silicon
1 Scope
This Standard specifies the product classification, technical requirements, test
methods, inspection rules, mark, transportation as well as storage for the
polycrystalline silicon.
The polycrystalline silicon, which is manufactured from trichlorosilane or silicon
tetrachloride by hydrogen reduction method, is applicable to this Standard.
2 Normative references
The following documents contain provisions which, through reference in this text,
constitute the provisions of this Standard. For dated reference, the subsequent
amendments (excluding corrigendum) or revisions of these publications do not apply.
However, all parties who reach an agreement according to this Standard are
encouraged to study whether the latest edition of these documents is applicable. For
undated references, the latest edition of the normative document is applicable to this
Standard.
GB/T 1550 Standard methods for measuring conductivity type of extrinsic
semiconducting materials
GB/T 1553 Test methods for minority carrier lifetime in bulk germanium and
silicon by measurement of photoconductivity decay
GB/T 1558 Test method for substitutional atomic carbon content of silicon by
infrared absorption
GB/T 4059 Polycrystalline silicon - Examination method - Zone-melting on
phosphorus under controlled atmosphere
GB/T 4060 Polycrystalline silicon - Examination method - Vacuum zone-melting
on boron
GB/T 4061 Polycrystalline silicon - Examination method - Assessment of
sandwiches on cross-section by chemical corrosion
GB/T 13389 Practice for conversion between resistivity and dopant density for
boron-doped and phosphorus-doped silicon
6.3 Inspection item
The phosphine resistivity, boron resistivity, n-type minority carrier lifetime,
concentration of carbon, structure surface quality and dimension shall be inspected
for each batch of product.
6.4 Sample collection and sample preparation
6.4.1 When the supplier is processing the "sample collection" and "sample
preparation", the sample collection and sample preparation of phosphine resistivity
and boron resistivity shall be carried out according to the requirements of GB/T 4059
and GB/T 4060; the sample collection and sample preparation of section oxide
lamella shall be carried out according to the requirements of GB/T 4061.
6.4.2 The sampling scheme for the arbitration shall be agreed by the supplier and
purchaser; the sampling location and sample preparation shall be carried out
according to 7.4.1.
6.5 Determination of inspection result
If one item of the inspection results is unqualified, then the doubling sampling is
required to be carried out for the re-inspection of the unqualified item(s). If it is still
unqualified, then this batch of products are deemed as unqualified.
7 Mark, Package, Transportation and Storage
7.1 The polycrystalline silicon shall be packed into a clean polyethylene packaging
bag after it is cleaned and dried in a certain way; then the packaging bag shall be
packed into a packing box. As for the block-shaped polycrystalline silicon, the net
weight of each bag shall be 2000 g±20 g, 5000 g±50 g, 10000 g±100g. Each stick of
club-shaped polycrystalline silicon shall be packed independently. It is required to
protect the polyethylene packaging bag from breakage while packing, so as to avoid
the foreign contamination to the product; the good protection shall be provided in an
optimal placing way.
7.2 The wordings or marks such as "Handle with Care", "Keep Away From
Corrosion, Keep Away from Moisture" shall be marked on the packing box, and
indicate.
A) Purchaser’s name;
B) Product name, designation;
C) Number of packages and net weight of the product;
D) Supplier’s name.
7.3 Each batch of product shall be accompanied by a Certification of Quality, and
noted with.
A) Supplier’s name;
B) Product name and designation;
C) Lot identification mark;
D) The gross weight and net weight of product;
E) Stamps of each inspection result and inspection department;
F) Serial number of this Standard;
G) Date of exit-factory.
7.4 The product shall be loaded and unloaded carefully during the transport process;
do not press and shove it, and adopt the vibration-proof measures.
7.5 The product shall be stored in a clean and dry environment.
8 Content of Order
The following contents shall be included in the order of specified products in this
Standard.
A) Product designation;
B) Serial number of this Standard;
C) Other.
......
Source: Above contents are excerpted from the PDF -- translated/reviewed by: www.chinesestandard.net / Wayne Zheng et al.
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