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GB/T 37053-2018: General specification for epitaxial wafers and substrates based on gallium nitride
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| GB/T 37053-2018 | English | 279 |
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General specification for epitaxial wafers and substrates based on gallium nitride
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GB/T 37053-2018
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Basic data | Standard ID | GB/T 37053-2018 (GB/T37053-2018) | | Description (Translated English) | General specification for epitaxial wafers and substrates based on gallium nitride | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H83 | | Classification of International Standard | 29.045 | | Word Count Estimation | 14,176 | | Date of Issue | 2018-12-28 | | Date of Implementation | 2019-07-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 37053-2018: General specification for epitaxial wafers and substrates based on gallium nitride
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General specification for epitaxial wafers and substrates based on gallium nitride
ICS 29.045
H83
National Standards of People's Republic of China
General specification for GaN epitaxial wafers and substrate sheets
Published on.2018-12-28
2019-07-01 implementation
State market supervision and administration
China National Standardization Administration issued
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
Please note that some of the contents of this document may involve patents. The issuing organization of this document is not responsible for identifying these patents.
This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards.
The Technical Committee of Materials Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Dongguan Zhongjiao Semiconductor Technology Co., Ltd., Hefei Rainbow Blu-ray Technology Co., Ltd., Suzhou Nawei Technology
Limited company, School of Electronic Science and Engineering, Nanjing University, China Electronics Technology Standardization Institute.
The main drafters of this standard. Ding Xiaomin, Liu Nanliu, Pan Yibo, Xu Ke, Xiu Xiangqian, Sun Yongjian, Wang Xiang, Zhang Guoyi.
General specification for GaN epitaxial wafers and substrate sheets
1 Scope
This standard specifies general specifications for GaN epitaxial wafers (hereinafter referred to as epitaxial wafers) and gallium nitride substrate wafers (hereinafter referred to as substrate wafers).
Includes product classification, requirements, inspection methods, inspection rules, and marking, packaging, transportation, and storage.
This standard applies to gallium nitride epitaxial wafers and gallium nitride substrate wafers. Products are mainly used for light-emitting diodes, laser diodes, detectors, etc.
Electrical devices, as well as microwave and power electronic power devices.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article.
Pieces. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 5698-2001 color terminology
GB/T 14264-2009 Semiconductor material terminology
3 Terms and definitions
The following terms and definitions as defined in GB/T 5698-2001 and GB/T 14264-2009 apply to this document. In order to facilitate
Use, the following repeatedly lists some terms and definitions in GB/T 14264-2009.
3.1 Substrate structure
3.1.1
GaN self-supporting substrate free-standingGaNsubstrate
Substrate in a semiconductor process with specific crystal faces and appropriate electrical, optical, and mechanical properties for epitaxial deposition, diffusion, and ion implantation
A gallium nitride substrate that is subjected to subsequent processing operations.
3.1.2
GaN composite substrate GaNtemplate
A composite structure composed of a gallium nitride single crystal thin film material and a supporting substrate thereof for subsequent processes such as epitaxial deposition, diffusion, and ion implantation
Operating gallium nitride substrate.
3.2 substrate conductivity type
3.2.1
GaN semi-insulating substrate semi-insulatingGaNsubstrate
A gallium nitride self-supporting substrate having a resistivity greater than 106 Ω·cm.
3.3 Material properties
3.3.1
Surface resistance uniformity sheetresistanceuniformity
The distribution of the sheet resistance in the epitaxial wafer is generally expressed as the ratio of the difference between the maximum and minimum values of the sheet resistance to the average sheet resistance.
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