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GB/T 19199-2015: Test methods for carbon acceptor concentration in semi-insulating gallium arsenide single crystals by absorption spectroscopy
Status: Valid GB/T 19199: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 19199-2015 | English | 129 |
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Test methods for carbon acceptor concentration in semi-insulating gallium arsenide single crystals by absorption spectroscopy
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GB/T 19199-2015
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| GB/T 19199-2003 | English | 239 |
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Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
| Obsolete |
GB/T 19199-2003
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PDF similar to GB/T 19199-2015
Basic data | Standard ID | GB/T 19199-2015 (GB/T19199-2015) | | Description (Translated English) | Test methods for carbon acceptor concentration in semi-insulating gallium arsenide single crystals by absorption spectroscopy | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H17 | | Classification of International Standard | 77.040 | | Word Count Estimation | 6,628 | | Date of Issue | 2015-12-10 | | Date of Implementation | 2016-07-01 | | Older Standard (superseded by this standard) | GB/T 19199-2003 | | Quoted Standard | GB/T 14264 | | Regulation (derived from) | National Standard Announcement 2015 No.38 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the semi-insulating GaAs single crystal carbon concentration infrared absorption test methods. This standard applies to the determination of non-doped semi-insulating gallium arsenide and carbon-doped single crystal of carbon concentration. | GB/T 19199-2015: Test methods for carbon acceptor concentration in semi-insulating gallium arsenide single crystals by absorption spectroscopy
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Test methods for carbon acceptor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
ICS 77.040
H17
National Standards of People's Republic of China
Replacing GB/T 19199-2003
Semi-insulating GaAs single crystal carbon concentration
Infrared Absorption Test Method
Issued on. 2015-12-10
2016-07-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard replaces GB/T 19199-2003 "semi-insulating GaAs single crystal infrared concentration of carbon absorption test methods."
This standard compared with GB/T 19199-2003, mainly in the following changes.
--- Added "Normative references" "Terms and Definitions", "disturbances" and "test environment" Section 4;
--- Semi-insulating GaAs single crystal extended resistivity range, the resistivity greater than 107Ω · cm amended as greater than 106Ω · cm;
--- Will range from "non-doped semi-insulating GaAs single crystal" to "carbon doped and non-doped semi-insulating GaAs single crystal";
--- Removed 0.4mm ~ 2mm cleavage sample preparation method of the thickness of the test sample;
When measuring chamber temperature difference --- Model Law, the "resolution of the instrument is 0.5cm-1 or 1cm-1", was revised to "resolution of the instrument 1cm-1".
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards
Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. the information industry materials for Quality Supervision and Inspection Center, Tianjin Central European Semiconductor Materials Technology Co., Ltd.,
National Electronic Materials Industry Association.
Drafters of this standard. He Xiukun, Li Jing, Zhang Xue-nan.
This standard replaces the standards previously issued as follows.
--- GB/T 19199-2003.
Semi-insulating GaAs single crystal carbon concentration
Infrared Absorption Test Method
1 Scope
This standard specifies the semi-insulating GaAs single crystal carbon concentration infrared absorption test methods.
Determination of semi-insulating GaAs single crystals concentration of carbon This standard applies to more than 106Ω · cm resistivity undoped and doped with carbon. measuring
Range. ambient temperature from 1.0 × 1015 atoms/cm3 to subrogation maximum solubility of carbon atoms, 77 K when a detection limit of
4.0 × 1014atoms/cm3.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 14264 semiconductor material terms
3 Terms and Definitions
Terms and definitions GB/T 14264 apply to this document defined.
4 Method summary
Carbon as a semi-insulating gallium arsenide mainly shallow acceptor impurity, its localized modes of vibration bands (band room temperature peak is 580cm-1,77K band peak
Bit 582cm-1) absorption coefficient and a concentration of carbon subrogation correspondence, as measured by the absorption coefficient can be calculated according to the empirical formula C
concentration.
5 disturbances
5.1 stray light reaching the detector, a carbon concentration of the test results will lead to deviation.
Testing area of \u200b\u200b52,000 test sample should be larger than the diaphragm aperture, or it may lead to erroneous test results.
5.3 when tested at room temperature, gallium arsenide ribbon width at half maximum acceptable value should be less than 2cm-1. When the calculated spectra, the larger the FWHM
Lead to measurement errors, FWHM determination method, see 9.2.7.
6 Equipment
6.1 Fourier transform infrared spectrometer, the instrument of minimum resolution should be better than 0.5cm-1.
6.2 77K cryogenic sample testing device.
6.3 micrometer. accuracy of 10μm.
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