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GB/T 29057-2023: Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
Status: Valid GB/T 29057: Evolution and historical versions
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| GB/T 29057-2023 | English | 269 |
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Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
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GB/T 29057-2023
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| GB/T 29057-2012 | English | 639 |
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Practice for evaluation of polycrystalline silicon rods by float-zone crystal growth and spectroscopy
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GB/T 29057-2012
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PDF similar to GB/T 29057-2023
Basic data | Standard ID | GB/T 29057-2023 (GB/T29057-2023) | | Description (Translated English) | Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 77.040 | | Word Count Estimation | 14,149 | | Date of Issue | 2023-08-06 | | Date of Implementation | 2024-03-01 | | Older Standard (superseded by this standard) | GB/T 29057-2012 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 29057-2023: Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 77.040
CCSH80
National Standards of People's Republic of China
Replace GB/T 29057-2012
Evaluation by zone melting crystal pulling method and spectral analysis method
Polycrystalline silicon rod procedures
Published on 2023-08-06
2024-03-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration Committee
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents"
Drafting.
This document replaces GB/T 29057-2012 "Regulations on the evaluation of polycrystalline silicon rods using zone melting crystal pulling method and spectral analysis method" and is consistent with
Compared with GB/T 29057-2012, in addition to structural adjustments and editorial changes, the main technical changes are as follows.
a) Purpose is deleted (see Chapter 1 of the.2012 edition);
b) Changed the scope (see Chapter 1, Chapter 2 of the.2012 edition);
c) Changed Chapter 3 "Limitations" to Chapter 5 "Interference Factors", and improved the content of interference factors (see Chapter 5,.2012 edition
Chapter 3);
d) Changed the method summary (see Chapter 4, Chapter 6 of the.2012 edition);
e) Added requirements for seed crystals (see 6.6);
f) Added selection of sampling plans (see 9.8);
g) Changes in test data processing (see Chapter 12, Chapter 13 of the.2012 edition);
h) Changed the precision (see Chapter 13, Chapter 14 of the.2012 edition);
i) Keywords deleted (see Chapter 15 of the.2012 edition);
j) Added test report (see Chapter 14).
Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents.
This document is jointly developed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards
It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2).
This document was drafted by. Qinghai Yellow River Upper Reaches Hydropower Development Co., Ltd. New Energy Branch, Nonferrous Metals Technology and Economic Research Institute
Limited liability company, Asia Silicon Industry (Qinghai) Co., Ltd., Luoyang China Silicon High-Tech Co., Ltd., Sichuan Yongxiang New Energy Co., Ltd., Xinjiang
Daqo New Energy Co., Ltd., Jiangsu Zhongneng Silicon Technology Development Co., Ltd., Xinjiang Xinte New Energy Materials Testing Center Co., Ltd., Shaanxi
Xi Nonferrous Tianhongruike Silicon Materials Co., Ltd., Jiangsu Xinhua Semiconductor Technology Co., Ltd., Yichang CSG Silicon Materials Co., Ltd.,
Qinghai Lihao Semiconductor Materials Co., Ltd., Leshan Product Quality Supervision and Inspection Institute, Xinjiang GCL New Energy Materials Technology Co., Ltd.
The main drafters of this document. Qin Rong, Xue Xinlu, Li Suqing, Wang Zhiqiang, Wan Ye, He Dongjiang, Yue Zheng, Zhang Xiaoshan, Zhao Shengliang, Guo Guangwei,
Chen Xuegang, Yu Shenghai, Deng Yuanhong, Wang Bin, Qiu Yanmei, Xu Yan, Liu Guoxia, Wan Shouzheng, Tian Hongxian, Liu Wenming, Zhao Xiaofei, Liang Hong, Zhao Juanlong.
This document was first published in.2012 and this is the first revision.
Evaluation by zone melting crystal pulling method and spectral analysis method
Polycrystalline silicon rod procedures
1 Scope
This document specifies the sampling of polycrystalline silicon rods, the melting and drawing of sample areas into single crystals, and the use of low-temperature infrared spectroscopy or photoluminescence spectroscopy.
Procedure for analyzing drawn single crystal silicon rods to determine the content of donors, acceptors, substituted carbon and interstitial oxygen impurities in polycrystalline silicon.
This document is applicable to the evaluation of rod-shaped polysilicon deposited and grown on silicon cores.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to
this document.
GB/T 620 Chemical Reagent Hydrofluoric Acid
GB/T 626 Chemical reagent nitric acid
GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials
GB/T 1551 Determination of resistivity of silicon single crystal. direct current four-probe method and direct current two-probe method
GB/T 1553 Photoconductivity decay method for determination of minority carrier lifetime in silicon and germanium bodies
GB/T 1554 Chemical preferential corrosion test method for silicon crystal integrity
GB/T 1555 Method for determination of crystal orientation of semiconductor single crystals
GB/T 1557 Infrared absorption measurement method for interstitial oxygen content in silicon crystals
GB/T 1558 Infrared absorption measurement method for substituted carbon atom content in silicon
GB/T 4842 Argon
GB/T 11446.1 Electronic grade water
GB/T 13389 Conversion procedures for resistivity and dopant concentration of boron-doped phosphorus-doped arsenic-doped silicon single crystal
GB/T 14264 Semiconductor material terminology
GB/T 24574 Photoluminescence test method for group III-V impurities in silicon single crystal
GB/T 24581 Determination of Group III and V impurity content in silicon single crystals by low-temperature Fourier transform infrared spectroscopy
GB/T 25915.1 Clean rooms and related controlled environments Part 1.Classification of air cleanliness levels according to particle concentration
GB/T 35306 Determination of carbon and oxygen content in silicon single crystals by low-temperature Fourier transform infrared spectroscopy
3 Terms and definitions
The terms and definitions defined in GB/T 14264 and the following apply to this document.
3.1
monitoring rod controlrod
A polysilicon cylinder obtained from a uniformly deposited layer of a polysilicon rod with determined values for its donor, acceptor, substitutional carbon and interstitial oxygen contents.
Note. Monitoring rods are used to monitor the cleanliness of sample core preparation, acid corrosion tank and zone melting process.
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