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GB/T 43612-2023: Collection of metallographs on defects in silicon carbide crystal materials
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Collection of metallographs on defects in silicon carbide crystal materials
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GB/T 43612-2023
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Basic data | Standard ID | GB/T 43612-2023 (GB/T43612-2023) | | Description (Translated English) | Collection of metallographs on defects in silicon carbide crystal materials | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 50,547 | | Date of Issue | 2023-12-28 | | Date of Implementation | 2024-07-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 43612-2023: Collection of metallographs on defects in silicon carbide crystal materials---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 29:045
CCSH80
National Standards of People's Republic of China
Silicon carbide crystal material defect map
Published on 2023-12-28
2024-07-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration Committee
Table of contents
PrefaceⅠ
1 Scope 1
2 Normative references 1
3 Terms and Definitions 1
4 Abbreviations 2
5 Silicon carbide crystal material defects 2
5:1 Ingot defects 2
5:2 Substrate defects 4
5:3 Epitaxial defects 8
5:4 Workmanship defects 12
6 Defect map 13
6:1 Ingot defect map 13
6:2 Substrate defect map 14
6:3 Epitaxy defect map 22
6:4 Process defect map 41
Reference 44
Index 45
Foreword
This document complies with the provisions of GB/T 1:1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents"
Drafting:
Please note that some content in this document may be subject to patents: The publication structure of this document assumes no responsibility for identifying patents:
This document is jointly developed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards
It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2):
This document was drafted by: Guangdong Tianyu Semiconductor Co:, Ltd:, Nonferrous Metals Technology and Economic Research Institute Co:, Ltd:, Beijing No:
Third Generation Semiconductor Industry Technology Innovation Strategic Alliance, Shandong Tianyue Advanced Technology Co:, Ltd:, Hebei Tongguang Semiconductor Co:, Ltd:,
Peking University Dongguan Institute of Optoelectronics, Shanxi Shuoke Crystal Co:, Ltd:, Hebei Puxing Electronic Technology Co:, Ltd:, Beijing Tianke Heda Half
Conductor Co:, Ltd:, China Electronics Technology Group Corporation Thirteenth Research Institute, Institute of Semiconductors, Chinese Academy of Sciences, Huzhou Tony Semiconductor
Technology Co:, Ltd:, China Electronics Technology Group Corporation No: 46 Research Institute, China Electronics Compound Semiconductor Co:, Ltd:, Nanjing Guosheng Electronics Co:, Ltd:
Co:, Ltd:, Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co:, Ltd:, New Micron (Suzhou) Semiconductor Technology Co:, Ltd:, Jiangsu
Zhuoyuan Semiconductor Co:, Ltd:
The main drafters of this document: Ding Xiongjie, Liu Wei, Han Jingrui, He Dongjiang, Li Suqing, Ding Xiaomin, Zhang Hong, Li Huanting, Zhang Hongyan, Yang Kun,
Li Bin, Yin Haotian, Gao Wei, Lu Yajuan, She Zongjing, Wang Yang, Niu Yingxi, Yan Yang, Yao Kang, Jin Xiangjun, Wu Dianrui, Li Guopeng, Zhang Xinfeng, Zhao Lili,
Zhang Shengtao, Xia Qiuliang, Li Guoping:
Silicon carbide crystal material defect map
1 Scope
This document specifies the morphological characteristics, causes and defect maps of conductive 4H silicon carbide (4H-SiC) crystal material defects:
This document is applicable to the research and development, production, testing and analysis of silicon carbide (ingots, substrate wafers, epitaxial wafers and subsequent processes) in the semiconductor industry:
link:
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text: Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to
this document:
GB/T 14264 Semiconductor material terminology
3 Terms and definitions
The terms and definitions defined in GB/T 14264 and the following apply to this document:
3:1
Ingot defect ingotdefect
During the growth process of the 4H-SiC crystal ingot due to the extension of defects in the seed crystal itself, deviation from the stoichiometric ratio, internal stress of the crystal ingot, and impurities,
resulting defects:
3:2
substratedefectsubstratedefect
Crystal defects or structural defects in the 4H-SiC substrate as well as defects left on the surface of the 4H-SiC substrate after cutting, grinding, and polishing:
3:3
epitaxialdefect epitaxialdefect
Crystal defects in the 4H-SiC epitaxial layer and the surface of the 4H-SiC epitaxial layer caused by the step flow controlled epitaxial growth method
birth defects:
3:4
Deep energy level centers or extrinsic crystalline defects introduced into 4H-SiC crystals during device manufacturing or material modification processes:
3:5
crystallographic defectcrystalinedefect
Point, line, surface and volume defects in 4H-SiC crystal:
Note: Including point, line, surface and volume defects in 4H-SiC ingot and substrate, as well as point, line and surface defects in 4H-SiC epitaxial layer:
3:6
Due to the presence of foreign particles, substrate crystal defects, substrate surface polishing scratches, sub-damage layers, and epitaxial growth on the surface of the monocrystalline 4H-SiC substrate,
Regular or irregular shapes are formed on the surface of the 4H-SiC epitaxial layer under the step flow controlled growth mechanism due to long condition deviation and other reasons:
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