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GB/T 25074-2025: Solar-grade polycrystalline silicon
Status: Valid GB/T 25074: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 25074-2025 | English | 149 |
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Solar-grade polycrystalline silicon
| Valid |
GB/T 25074-2025
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| GB/T 25074-2017 | English | 80 |
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Solar-grade polycrystalline silicon
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GB/T 25074-2017
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| GB/T 25074-2010 | English | 239 |
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Solar-grade polycrystalline silicon
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GB/T 25074-2010
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PDF similar to GB/T 25074-2025
Basic data | Standard ID | GB/T 25074-2025 (GB/T25074-2025) | | Description (Translated English) | Solar-grade polycrystalline silicon | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H82 | | Classification of International Standard | 29.045 | | Word Count Estimation | 7,761 | | Date of Issue | 2025-06-30 | | Date of Implementation | 2026-01-01 | | Older Standard (superseded by this standard) | GB/T 25074-2017 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 25074-2025: Solar-grade polycrystalline silicon---This is an excerpt. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.), auto-downloaded/delivered in 9 seconds, can be purchased online: https://www.ChineseStandard.net/PDF.aspx/GBT25074-2025
ICS 29.045
CCSH82
National Standard of the People's Republic of China
Replaces GB/T 25074-2017
Solar-grade silicon polycrystalline
Released on June 30, 2025
Implementation on January 1, 2026
State Administration for Market Regulation
The National Standardization Administration issued
Preface
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents"
Drafting.
This document replaces GB/T 25074-2017 Solar Grade Polysilicon. Compared with GB/T 25074-2017, except for the structural adjustment and
In addition to the logical changes, the main technical changes are as follows.
a) The scope of application has been changed (see Chapter 1, Chapter 1 of the.2017 edition);
b) The technical specifications for donor, acceptor, carbon, base metal, and surface metal have been changed, and the technical requirements for oxygen concentration and minority carrier lifetime have been deleted.
(See 5.1, 5.1 of the.2017 edition);
c) Deleted the requirements for the mixed ratio of silicon and polycrystalline (see 5.2 of the.2017 edition);
d) Added the test methods specified in GB/T 35306 and GB/T 37049, and deleted the sample preparation method specified in GB/T 4060
(See Chapter 6, Chapter 6 of the.2017 edition);
e) Changed the relevant requirements for batching (see 7.2, 7.2 of the.2017 edition);
f) The inspection items have been changed (see 7.3, 7.3 of the.2017 edition);
g) Change “value” to “sampling” (see 7.4, 7.4 of the.2017 edition);
h) The judgment of test results has been changed (see 7.5, 7.5 of the.2017 edition);
i) Change “quality certificate” to “accompanying documents” (see 8.5, 8.5 of the.2017 edition).
Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.
This document was jointly issued by the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203) and the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203).
It is jointly proposed and coordinated by the Materials Technical Committee of the Chemical Engineering Technical Committee (SAC/TC203/SC2).
This document was drafted by. Luoyang Zhongsi High-Tech Co., Ltd., Nonferrous Metals Technology and Economic Research Institute Co., Ltd., Sichuan Yongxiang Co., Ltd.
Co., Ltd., Xinte Energy Co., Ltd., Asia Silicon (Qinghai) Co., Ltd., Xinjiang Daquan New Energy Co., Ltd.,
Qinghai Yellow River Upper Reaches Hydropower Development Co., Ltd. New Energy Branch, Xinjiang East Hope New Energy Co., Ltd., Qinghai Nanbo New Energy Technology Co., Ltd.
Technology Co., Ltd., Qinghai Lihao Qingneng Co., Ltd., Longi Green Energy Technology Co., Ltd., TCL Zhonghuan New Energy Technology Co., Ltd.
Company, Jiangsu Zhongneng Silicon Technology Development Co., Ltd., Zhejiang University Ningbo Institute of Technology, Inner Mongolia Xingyang Technology Co., Ltd.
The main drafters of this document are. Wan Ye, He Dongjiang, Yan Dazhou, Ning Xiaoxiao, Zhang Yuanyuan, Li Suqing, Guo Shuhu, Xu Shunbo, Yang Xiaodong, Zong Bing,
Li Haojie, Qin Rong, Zhang Ke, Liang Bo, Ran Yi, Deng Hao, Zhang Xuenan, Wang Bin, Hu Dongli, Zhu Yulong, and Tao Gangyi.
This document was first published in.2010, revised for the first time in.2017, and this is the second revision.
Solar-grade silicon polycrystalline
1 Scope
This document specifies the grades and classifications, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, etc. of solar-grade silicon polycrystalline.
Storage, accompanying documents and order forms, etc.
This document applies to solar-grade silicon polycrystals (hereinafter referred to as silicon polycrystals) grown using chlorosilane and silane as raw materials.
2 Normative references
The contents of the following documents constitute the essential clauses of this document through normative references in this document.
For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to
This document.
GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials
GB/T 1551 Determination of resistivity of silicon single crystals - In-line four-probe method and DC two-probe method
GB/T 1553 Determination of minority carrier lifetime in silicon and germanium - Photoconductivity decay method
GB/T 1557 Infrared absorption measurement method for interstitial oxygen content in silicon crystals
GB/T 1558 Infrared absorption test method for substitutional carbon content in silicon
GB/T 4059 Test method for phosphorus in atmosphere zone melting of silicon polycrystalline
GB/T 14264 Terminology of Semiconductor Materials
GB/T 14844 Semiconductor material designation method
GB/T 24574 Photoluminescence test method for III-V group impurities in silicon single crystals
GB/T 24581 Determination of Group III and Group V impurities in silicon single crystals - Low temperature Fourier transform infrared spectroscopy
GB/T 24582 Determination of metallic impurities on the surface of polycrystalline silicon - Acid leaching-inductively coupled plasma mass spectrometry
GB/T 29057 Procedure for evaluating polycrystalline silicon rods by melt zone pulling and spectral analysis
GB/T 29849 Inductively coupled plasma mass spectrometry method for determination of surface metal impurities in silicon materials for photovoltaic cells
GB/T 31854 Inductively coupled plasma mass spectrometry method for determination of metallic impurities in silicon materials for photovoltaic cells
GB/T 35306 Determination of carbon and oxygen content in silicon single crystals - Low temperature Fourier transform infrared spectroscopy
GB/T 37049 Determination of base metal impurities in electronic grade polycrystalline silicon - Inductively coupled plasma mass spectrometry
3 Terms and Definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 Brands and classifications
4.1 Brand
The grade of silicon polycrystalline is expressed in accordance with the provisions of GB/T 14844.
4.2 Classification
Silicon polycrystalline is divided into block and rod according to its appearance, n-type and p-type according to its conductivity type, and 4 types according to its technical indicators.
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