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GB/T 30858-2014 English PDF

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GB/T 30858-2014: Polished mono-crystalline sapphire substrate product
Status: Valid
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GB/T 30858-2014English489 Add to Cart 4 days [Need to translate] Polished mono-crystalline sapphire substrate product Valid GB/T 30858-2014

PDF similar to GB/T 30858-2014


Standard similar to GB/T 30858-2014

GB/T 29055   GB/T 31854   SJ/T 11488   GB/T 30855   GB/T 30856   GB/T 30854   

Basic data

Standard ID GB/T 30858-2014 (GB/T30858-2014)
Description (Translated English) Polished mono-crystalline sapphire substrate product
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H83
Classification of International Standard 29.045
Word Count Estimation 21,269
Date of Issue 7/24/2014
Date of Implementation 4/1/2015
Quoted Standard GB/T 1031; GB/T 1555; GB/T 2828.1; GB/T 6619; GB/T 6620; GB/T 6624; GB/T 13387; GB/T 14140; GB/T 14264; GB/T 19921; GB/T 30857
Regulation (derived from) National Standards Bulletin No. 19, 2014
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This standard specifies the polished sapphire substrate requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate and purchase order (or contract) content. This standard applies to single-sided polishin

GB/T 30858-2014: Polished mono-crystalline sapphire substrate product

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Polished mono-crystalline sapphire substrate product ICS 29.045 H83 National Standards of People's Republic of China Polished sapphire single crystal substrate Issued on. 2014-07-24 2015-04-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and materials Technical Committee (SAC/TC 203/SC2) jointly proposed and managed. This standard is mainly drafted by. GCL Optoelectronics Technology Holdings Limited, Shanghai Institute of Optics and Fine Mechanics, Zhejiang Yun Feng New Energy Technology Ltd., Zhejiang Shangcheng Technology Co., Ltd. Jiangsu Ji Xingxincailiao Limited. The main drafters of this standard. Wei Mingde, Zhaohui, Liu Yifeng, Hang Yin, Xu Yongliang, Zhong Yuan Chun, CAI Jin-rong. Polished sapphire single crystal substrate

1 Scope

This standard specifies the polished sapphire substrate requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate SHEET with your order (or contract) content. This standard applies to single-sided polishing sapphire substrate sheet (hereinafter referred to as sapphire substrate sheet).

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 1031 Geometrical product specifications (GPS) Surface texture Profile method Surface roughness parameters and their values GB/T 1555 to the measurement method of a semiconductor single crystal GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan GB/T 6619 wafer curvature testing methods GB/T 6620 wafer warpage non-contact test method GB/T 6624 polished silicon surface quality by visual inspection GB/T 13387 and other electronic materials silicon wafer reference surface length measurement method GB/T 14140 wafer diameter measuring method GB/T 14264 semiconductor material terms GB/T 19921 Test Method polished silicon surface of the particles GB/T 30857 sapphire substrate thickness and thickness variation of test methods

3 Terms and Definitions

GB/T 14264 and defined by the following terms and definitions apply to this document. 3.1 Sapphire sapphire Can be used for the epitaxial growth of mono-crystalline alumina material is artificial growth of the crystal is determined. 3.2 Substrate substrate For growing a silicon, gallium nitride or sapphire wafer polishing other materials. 3.3 Local thickness variation localthicknessvariation When the sapphire wafer backside ideal plane in the local region of the surface of the wafer, the maximum deviation with respect to a specific reference plane, Usually reports the maximum of all local localized on the wafer. 3.4 Sapphire crystal rod sapphireingot Depending on the particular axially to the crystal grown by machining after the sapphire rod sections meet.

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