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GB/T 20230-2022: Indium phosphide single crystal
Status: Valid GB/T 20230: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 20230-2022 | English | 259 |
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Indium phosphide single crystal
| Valid |
GB/T 20230-2022
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| GB/T 20230-2006 | English | 319 |
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Indium phosphide single crystal
| Obsolete |
GB/T 20230-2006
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PDF similar to GB/T 20230-2022
Basic data | Standard ID | GB/T 20230-2022 (GB/T20230-2022) | | Description (Translated English) | Indium phosphide single crystal | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H83 | | Word Count Estimation | 13,170 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 20230-2022: Indium phosphide single crystal---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Indium phosphide single crystal
ICS 29.045
CCSH83
National Standards of People's Republic of China
Replacing GB/T 20230-2006
Indium Phosphide Single Crystal
Published on 2022-03-09
2022-10-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration
foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents"
drafted.
This document replaces GB/T 20230-2006 "Indium Phosphide Single Crystal", compared with GB/T 20230-2006, except for structural adjustment and editorial
In addition to the changes, the main technical changes are as follows.
a) Changed the scope of application (see Chapter 1, Chapter 1 of the.2006 edition);
b) the chapter "Terms and Definitions" was added (see Chapter 3);
c) Changed the designation method of indium phosphide single crystal ingots (see 4.1, 3.1 of the.2006 edition);
d) The designation method of indium phosphide single crystal polished wafers has been added (see 4.2);
e) Changed the requirements for the electrical properties of indium phosphide single crystal ingots (see 5.1.1, 3.2.2 of the.2006 edition);
f) The requirements for electrical properties of n-type undoped indium phosphide single crystal ingots are added (see 5.1.1);
g) The crystal orientation < 111> and other crystal orientations of the ingot indium phosphide ingot are deleted through negotiation between the supplier and the buyer (see 3.2.3 of the.2006 edition);
h) The requirements for dislocation density of indium phosphide single crystal ingots are added (see 5.1.3);
i) Deleted the requirement for no twinning lines of indium phosphide single crystal ingots (see 3.2.4 of the.2006 edition);
j) Deleted the requirement for the diameter of ingot single crystal indium phosphide (see 3.2.5 of the.2006 edition);
k) Changed the requirements for dislocation density of indium phosphide single crystal polished wafers (see 5.2.1, 3.3.1 of the.2006 edition);
l) The requirements for surface orientation and fiducial marks of indium phosphide single crystal polished wafers have been added (see 5.2.2);
m) The geometrical parameter requirements for indium phosphide single crystal polished wafers with a diameter of 150.0 mm are added (see 5.2.3);
n) Changed the requirements for indium phosphide single crystal polished wafer thickness, total thickness variation, warpage, and total indication reading (see 5.2.3,.2006 edition
3.3.2);
o) Changed the requirements for the surface quality of indium phosphide single crystal polished wafers (see 5.2.4, 3.3.3 of the.2006 edition);
p) Added the requirements for surface particles of indium phosphide single crystal polished wafers (see 5.2.5);
q) Deleted the requirement for the lamellar orientation of indium phosphide single crystal polished (see 3.3.5 of the.2006 edition);
r) Changed the test method (see Chapter 6, Chapter 4 of the.2006 edition);
s) Modified the determination of batch, inspection items, sampling and inspection results (see Chapter 7, Chapter 5 of the.2006 edition);
t) Changed the requirements for marking (see 8.1, 6.1 of the.2006 edition);
u) Changed the packaging requirements (see 8.2, 6.2 and 6.3 of the.2006 edition);
v) Changed the requirements for accompanying documents (see 8.5, 6.5 of the.2006 edition);
w) Added the content of the order form (see Chapter 9);
x) Added the normative appendix "Test method for dislocation density of indium phosphide single crystals" (see Appendix A).
Please note that some content of this document may be patented. The issuing agency of this document assumes no responsibility for identifying patents.
This document is jointly developed by the National Standardization Technical Committee for Semiconductor Equipment and Materials (SAC/TC203) and the National Standard for Semiconductor Equipment and Materials
The material sub-technical committee (SAC/TC203/SC2) of the Chemical Technology Committee jointly proposed and managed it.
This document is drafted by. The Thirteenth Research Institute of China Electronics Technology Group Corporation, Yunnan Xinyao Semiconductor Materials Co., Ltd., Guangdong Pioneer
Microelectronics Technology Co., Ltd., Youyan Guojinghui New Materials Co., Ltd., and Nonferrous Metals Technology and Economic Research Institute Co., Ltd.
The main drafters of this document. Sun Niefeng, Li Xiaolan, Wang Yang, Liu Huisheng, Hui Feng, Li Suqing, Zhu Liu, Wang Shujie, Shao Huimin, Zhou Tiejun,
Shi Yanlei, Fu Lijie, Wang Bo, Zhang Xiaodan, Jiang Jian, Wang Yu.
This document was first published in.2006 and this is the first revision.
Indium Phosphide Single Crystal
1 Scope
This document specifies the grades, technical requirements, test methods, inspection rules, signs, packaging, transportation, storage and accompanying documents of indium phosphide single crystals
parts and the contents of the order form.
This document applies to the production of indium phosphide single crystal ingots and indium phosphide single crystal polished wafers for optoelectronic and microelectronic devices.
2 Normative references
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations
documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to
this document.
GB/T 1555 Method for Determination of Crystal Orientation of Semiconductor Single Crystal
GB/T 2828.1-2012 Counting Sampling Inspection Procedures Part 1.Lot-by-Lot Inspection Sampling Retrieved by Acceptance Quality Limit (AQL)
plan
GB/T 4326 Extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method
GB/T 6618 Silicon Wafer Thickness and Total Thickness Variation Test Method
GB/T 6624 Visual inspection method for the surface quality of silicon polished wafers
GB/T 13388 Silicon wafer reference plane crystallographic orientation X-ray test method
GB/T 14264 Terms of Semiconductor Materials
GB/T 19921 Test method for surface particles of silicon polished wafers
GB/T 26067 silicon wafer notch size test method
GB/T 32278 Silicon carbide single wafer flatness test method
SJ/T 11488 Test method for semi-insulating gallium arsenide resistivity, Hall coefficient and mobility
3 Terms and Definitions
Terms and definitions defined in GB/T 14264 apply to this document.
4 grades
4.1 Ingot of indium phosphide single crystal
The designation method of indium phosphide single crystal ingot is as follows.
□-InP-□()-< >
Indicates the crystal orientation
Indicates the conductivity type, and the element symbol in parentheses indicates the dopant
Indicates indium phosphide single crystal ingot
Indicates the growth method of a single crystal
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