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GB/T 29504-2013: 300 mm monocrystalline silicon
Status: Valid
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 29504-2013 | English | 169 |
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300 mm monocrystalline silicon
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GB/T 29504-2013
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Basic data | Standard ID | GB/T 29504-2013 (GB/T29504-2013) | | Description (Translated English) | 300 mm monocrystalline silicon | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H82 | | Classification of International Standard | 29.045 | | Word Count Estimation | 7,783 | | Quoted Standard | GB/T 1550; GB/T 1551-2009; GB/T 1554; GB/T 1555; GB/T 1557; GB/T 1558; GB/T 11073-2007; GB/T 14140; GB/T 14264; YS/T 679 | | Regulation (derived from) | National Standards Bulletin 2013 No. 6 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the diameter of 300mm, p -type, (100) crystal orientation, resistivity 0. 5�� �� cm ~ 20�� �� cmm silicon technical requirements, test methods, inspection rules and signs, packaging, transportation, storage and so on. This standard app | GB/T 29504-2013: 300 mm monocrystalline silicon---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
300 mm monocrystalline silicon
ICS 29.045
H82
National Standards of People's Republic of China
300mm silicon single crystal
Issued on. 2013-05-09
2014-02-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and focal points.
This standard was drafted. Grinm Semiconductor Materials Co., Ltd., China Nonferrous Metals Industry Standards and Metrology Institute for quality, universal silicon
Feng Electronics Co., Ltd., Ningbo Lili Electronics Co., Ltd.
The main drafters of this standard. Yan Zhi Rui, Sun Yan, Lu Liyan, Zhang Guo Hu, Lou Chunlan, Liupei Dong to Lei.
300mm silicon single crystal
1 Scope
This standard specifies the diameter of 300mm, p-type < 100> crystal orientation, resistivity of 0.5Ω · cm ~ 20Ω · cm silicon single crystal of technical requirements,
Test methods, inspection rules and signs, packaging, transportation, storage and so on.
This standard applies to a silicon single crystal by the Czochralski prepared mainly for the production of integrated circuits to meet with a line width of 0.13μm and below IC technology
300mm polished silicon single crystal needs surgery.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 1550 extrinsic conductivity type semiconductor material testing methods
GB/T 1551-2009 monocrystalline silicon resistivity measuring method
GB/T 1554 crystallographic perfection of silicon by preferential etch test methods
GB/T 1555 to the measurement method of a semiconductor single crystal
GB/T 1557 interstitial oxygen content in the silicon crystal infrared absorption measurement method
GB/T 1558 silicon substitutional atomic carbon content by infrared absorption method
Methods of measurement GB/T 11073-2007 radial resistivity variation on silicon
GB/T 14140 wafer diameter measuring method
GB/T 14264 semiconductor material terms
YS/T 679 unsteady surface photovoltage test method intrinsic semiconductor minority carrier diffusion length
3 Terms and Definitions
Terms and definitions GB/T 14264 apply to this document defined.
4. Technical Requirements
4.1 diameter
After a silicon single crystal diameter rounded to 301mm, tolerance ± 0.3mm. Other user requirements and not rounded silicon single crystal diameter and allow
Xu deviation agreed by both parties.
4.2 Resistivity
4.2.1 resistivity silicon single crystal and radial resistivity change should meet the requirements in Table 1.
Table 1 monocrystalline silicon electrical parameters
Item conductive type dopant element
Resistivity
Ω · cm
Radial resistivity change
Index p boron 0.5 ~ 20 ≤10
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