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GB/T 12963-2022 PDF English

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GB/T 12963-2022: Electronic-grade polycrystalline silicon
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GB/T 12963: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] deliveryName of Chinese StandardStatus
GB/T 12963-2022English170 Add to Cart 0-9 seconds. Auto-delivery Electronic-grade polycrystalline silicon Valid
GB/T 12963-2014English90 Add to Cart 0-9 seconds. Auto-delivery Electronic-grade polycrystalline silicon Obsolete
GB/T 12963-2009English70 Add to Cart 0-9 seconds. Auto-delivery Specification for polycrystalline silicon Obsolete
GB/T 12963-1996English239 Add to Cart 2 days Polycrystalline silicon Obsolete
GB 12963-1991English199 Add to Cart 2 days Polycrystalline silicon Obsolete

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GB/T 12963-2022: Electronic-grade polycrystalline silicon

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GB NATIONAL STANDARD OF THE PEOPLE’S REPUBLIC OF CHINA ICS 29.045 CCS H 82 Replacing GB/T 12963-2014 Electronic-Grade Polycrystalline Silicon Issued on. DECEMBER 30, 2022 Implemented on. JULY 1, 2023 Issued by. State Administration for Market Regulation; Standardization Administration of the People’s Republic of China.

Table of Contents

Foreword... 3 1 Scope... 5 2 Normative References... 5 3 Terms and Definitions... 6 4 Designation and Category... 6 5 Technical Requirements... 6 6 Test Methods... 8 7 Inspection Rules... 9 8 Marking, Packaging, Transportation, Storage and Accompanying Documents... 10 9 Contents of Order Form... 11

Foreword

This Document was drafted as per the rules specified in GB/T 1.1-2020 Directives for Standardization – Part 1.Rules for the Structure and Drafting of Standardizing Documents. This Document replaced GB/T 12963-2014 Electronic-Grade Polycrystalline Silicon. Compared with GB/T 12963-2014, the major technical changes of this Document are as follows besides the structural adjustments and editorial modifications. a) Change the scope of application (see Clause 1 of this Edition; Clause 1 of the 2014 Edition); b) Change the designation requirements (see 4.1 of this Edition; 4.1.1 of the 2014 Edition); c) Change the product grade (see 4.2 of this Edition; 4.1.2 of the 2014 Edition); d) Change the technical indicators of different grades of electronic grade polycrystalline silicon (see 5.1of this Edition; 4.2 of the 2014 Edition); e) Change the structural requirements (see 5.3 of this Edition; 4.4 of the 2014 Edition); f) Change the content of the test method (see Clause 6 of this Edition; Clause 5 of the 2014 Edition); g) Change the requirements for inspection items (see 7.3 of this Edition; 6.3 of the 2014 Edition); h) Change the content of sampling and sample preparation (see 7.4.1 of this Edition; 6.4.1 of the 2014 Edition); i) Change the determination of test results of oxygen content (see 7.5.2 of this Edition; 6.5.1 of the 2014 Edition); j) Change the content of the marking (see 8.1 of this Edition; 7.1 of the 2014 Edition); k) Change the content of accompanying files (see 8.5 of this Edition; 7.5 of 2014 Edition). Please note some contents of this Document may involve patents. The issuing agency of this Document shall not assume the responsibility to identify these patents. This Document was proposed by and under the jurisdiction of National Technical Committee on Semiconductor Equipment and Materials of Standardization Administration of China (SAC/TC 203), and Material Subcommittee of National Technical Committee on Semiconductor Equipment and Materials of Standardization Administration of China (SAC/TC 203/SC/2). Drafting organizations of this Document. Jiangsu Xinhua Semiconductor Technology Co., Ltd.; Nonferrous Metal Technology and Economy Research Institute Co., Ltd.; Qinghai Yellow River Upstream Hydropower Development Co., Ltd., New Energy Branch; Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd.; GRINM Semiconductor Materials Co., Ltd.; MCL Electronic Materials Co., Ltd.; Asia Silicon (Qinghai) Co., Ltd.; Shannxi Nonferrous Tian Hong REC Silicon Material Co., Ltd.; Xinte Energy Co., Ltd.; Sichuan Yongixang New Energy Co., Ltd.; Shanghai Saift Semiconductor Materials Co., Ltd.; Yichang CSG Polysilicon Co., Ltd.; Zhejiang Haina Semiconductor Co., Ltd.; Luoyang China Silicon New Material Co., Ltd.; and Dongfang Electric (Leshan) Eban High-Purity Material Co., Ltd. Chief drafting staffs of this Document. Tian Xin, Jiang Wenwu, Zhao Peizhi, Wang Shouzheng, Li Suqing, Qin Rong, Wang Bin, Sun Yan, He Dongjiang, Chen Weiqun, Zong Bing, Xu Yan, Qiu Yanmei, Li Bin, Liu Xiaoxia, Zhang Zun, Fu Xuguang, Dong Xianjun, Pan Jinping, Zhang Yuanyuan, and Lei Cong. This Document was first time published in 1991; first time revised in 1996; second time revised in 2009; third time revised in 2014; and it is the fourth time revised hereby. Electronic-Grade Polycrystalline Silicon

1 Scope

This Document stipulates the designations and categories, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, accompanying documents and order form content of electronic grade polycrystalline silicon. This Document applies to electronic grade polycrystalline silicon (hereinafter referred to as "polycrystalline silicon") produced from chlorosilane and silane.

2 Normative References

The provisions in following documents become the essential provisions of this Document through reference in this Document. For the dated documents, only the versions with the dates indicated are applicable to this Document; for the undated documents, only the latest version (including all the amendments) is applicable to this Document. GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551 Test method for measuring resistivity of monocrystal silicon - In-line four- point probe and direct current two-point probe method GB/T 1553 Test methods for minority carrier lifetime in bulk silicon and germanium - Photoconductivity decay method GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption GB/T 1558 Test method for substitutional carbon content in silicon by infrared absorption GB/T 4059 Polycrystalline silicon - Examination method - Zone-melting on phosphorus under controlled atmosphere GB/T 4060 Polycrystalline silicon - Examination method - Vacuum zone-melting on boron

3 Terms and Definitions

For the purposes of this Document, the terms and definitions given in GB/T 14264 apply.

4 Designation and Category

4.1 The designation indication of polycrystalline silicon shall comply with the provisions of GB/T 14844.

5 Technical Requirements

5.1 Technical indicators The grade and related technical indicators of polycrystalline silicon shall comply with the provisions of Table 1. 5.2 Dimensions and tolerances 5.2.1 Bulk polycrystalline silicon has an irregular shape and random size distribution; and its linear size shall be 6mm~150mm. When mixing, silicon blocks with a linear size less than 6mm shall not exceed 1% of the total weight; if there are other dimensions requirements, it shall be determined through negotiation between the supplier and the purchaser. 5.3 Structure Polycrystalline silicon shall be free of oxidation interlayers and temperature interlayers. 5.4 Surface quality 5.4.1 The surface structure of polycrystalline silicon shall be dense and smooth, and the edge particles on the cross-section shall be no larger than 3mm. 5.4.2 The appearance of polycrystalline silicon shall be free of stains, discoloration and visible contaminants.

6 Test Methods

6.1 Before testing polycrystalline silicon for donor impurity content, acceptor impurity content, carbon content, conductivity type, resistivity, minority carrier lifetime, and oxygen content, the polycrystalline silicon shall be made into a monocrystalline specimen according to the methods in GB/T 4059, GB/T 4060 or GB/T 29057. 6.4 The inspection of the basis metal impurity content of the polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 37049. 6.5 The inspection of surface metal impurity content of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 24582. 6.6 The inspection of conductivity type of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1550. 6.7 The inspection of resistivity of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1551. 6.10 The size distribution range of bulk polycrystalline silicon is tested by screening. The dimensions and deviations of rod-shaped polycrystalline silicon are measured with measuring tools of corresponding accuracy. 6.11 The inspection of polycrystalline silicon structure (oxidation interlayer, temperature interlayer) shall be carried out in accordance with the provisions of GB/T 4061. 6.12 The particle size of the cross-section edge of polycrystalline silicon shall be measured with measuring tools of corresponding accuracy, and other surface quality shall be visually inspected.

7 Inspection Rules

7.1 Inspection and acceptance 7.1.1 The product shall be inspected by the supplier or a third party to ensure that the product quality complies with the provisions of this Document and the order form. 7.2 Batching Products shall be submitted for acceptance in batches; and each batch shall be composed of polycrystalline silicon produced with the same specifications, the same grade, and the same process. 7.3 Inspection items 7.3.1 Each batch of products shall be inspected for the following items including donor impurity content, acceptor impurity content, carbon content, basis metal impurity content, surface metal impurity content, size and tolerance, structure, and surface quality. 7.4 Sampling and sample preparation 7.4.1 The sampling and sample preparation of donor impurity content, acceptor impurity content, conductivity type, minority carrier lifetime, carbon content, oxygen content, basis metal impurity content, surface metal impurity content, size and tolerance, and surface quality are determined through negotiation between the supplier and the purchaser. 7.5 Judgment of inspection results 7.5.1 If any test item of any sample is unqualified in the test results of polycrystalline silicon’s donor impurity content, acceptor impurity content, carbon content, basis metal impurity content, and surface metal impurity content, double sampling shall be required to be taken for that unqualified item for reinspection.

8 Marking, Packaging, Transportation, Storage and Accompanying Documents

8.1 Marking The outside of the product packaging box shall be marked with the words or signs of "Handle with Care" and "Moisture-proof", and indicate. 8.2 Packaging The product is packed into clean polyethylene packaging bags and sealed. When packaging, the polyethylene packaging bag shall be prevented from being damaged to avoid external contamination of the product; and good protection shall be provided before being packed into the outer packaging box. The packaging of polycrystalline silicon can also be determined through negotiation between the supplier and the purchaser. 8.3 Transportation During transportation, products shall be loaded and unloaded with care, not pressed or squeezed, and shock-proof measures shall be taken. 8.4 Storage Product shall be stored in a clean and dry environment. 8.5 Accompanying documents Each batch of products shall be accompanied by accompanying documents, which shall include the following contents in addition to supplier information, product information, this Document number, exit-factory date or packaging date.

9 Contents of Order Form

The purchaser can list the following contents in the order form for ordering the products listed in this Document according to its own needs. ......
Source: Above contents are excerpted from the full-copy PDF -- translated/reviewed by: www.ChineseStandard.net / Wayne Zheng et al.


      

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