HOME   Cart(0)   Quotation   About-Us Tax PDFs Standard-List Powered by Google www.ChineseStandard.net Database: 189760 (5 Oct 2024)

GB/T 12963-2022 PDF in English


GB/T 12963-2022 (GB/T12963-2022, GBT 12963-2022, GBT12963-2022)
Standard IDContents [version]USDSTEP2[PDF] delivered inName of Chinese StandardStatus
GB/T 12963-2022English170 Add to Cart 0-9 seconds. Auto-delivery. Electronic-grade polycrystalline silicon Valid
GB/T 12963-2014English90 Add to Cart 0-9 seconds. Auto-delivery. Electronic-grade polycrystalline silicon Obsolete
GB/T 12963-2009English70 Add to Cart 0-9 seconds. Auto-delivery. Specification for polycrystalline silicon Obsolete
GB/T 12963-1996English239 Add to Cart 2 days Polycrystalline silicon Obsolete
GB 12963-1991English199 Add to Cart 2 days Polycrystalline silicon Obsolete
Standards related to (historical): GB/T 12963-2022
PDF Preview

GB/T 12963-2022: PDF in English (GBT 12963-2022)

GB/T 12963-2022 GB NATIONAL STANDARD OF THE PEOPLE’S REPUBLIC OF CHINA ICS 29.045 CCS H 82 Replacing GB/T 12963-2014 Electronic-Grade Polycrystalline Silicon ISSUED ON: DECEMBER 30, 2022 IMPLEMENTED ON: JULY 1, 2023 Issued by: State Administration for Market Regulation; Standardization Administration of the People’s Republic of China. Table of Contents Foreword ... 3 1 Scope ... 5 2 Normative References ... 5 3 Terms and Definitions ... 6 4 Designation and Category ... 6 5 Technical Requirements ... 6 6 Test Methods ... 8 7 Inspection Rules ... 9 8 Marking, Packaging, Transportation, Storage and Accompanying Documents ... 10 9 Contents of Order Form ... 11 Electronic-Grade Polycrystalline Silicon 1 Scope This Document stipulates the designations and categories, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, accompanying documents and order form content of electronic grade polycrystalline silicon. This Document applies to electronic grade polycrystalline silicon (hereinafter referred to as "polycrystalline silicon") produced from chlorosilane and silane. 2 Normative References The provisions in following documents become the essential provisions of this Document through reference in this Document. For the dated documents, only the versions with the dates indicated are applicable to this Document; for the undated documents, only the latest version (including all the amendments) is applicable to this Document. GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551 Test method for measuring resistivity of monocrystal silicon - In-line four- point probe and direct current two-point probe method GB/T 1553 Test methods for minority carrier lifetime in bulk silicon and germanium - Photoconductivity decay method GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption GB/T 1558 Test method for substitutional carbon content in silicon by infrared absorption GB/T 4059 Polycrystalline silicon - Examination method - Zone-melting on phosphorus under controlled atmosphere GB/T 4060 Polycrystalline silicon - Examination method - Vacuum zone-melting on boron GB/T 4061 Polycrystalline silicon - examination method - assessment of sandwiches on cross-section by chemical corrosion GB/T 14264 Terminology of semiconductor materials GB/T 14844 Designations of semiconductor materials GB/T 24574 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ- Ⅴ impurities GB/T 24581 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon - Low temperature FT-IR analysis method GB/T 24582 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry GB/T 29057 Practice for evaluation of polycrystalline silicon rods by float-zone crystal growth and spectroscopy GB/T 35306 Test method for carbon and oxygen content of single crystal silicon―Low temperature Fourier transform infrared spectrometry GB/T 37049 Test method for the content of metal impurity in electronic grade polysilicon - Inductively coupled-plasma mass spectrometry method 3 Terms and Definitions For the purposes of this Document, the terms and definitions given in GB/T 14264 apply. 4 Designation and Category 4.1 The designation indication of polycrystalline silicon shall comply with the provisions of GB/T 14844. 4.2 Polycrystalline silicon is divided into bulk polycrystalline silicon and rod-shaped polycrystalline silicon according to the shape; n-type and p-type according to the conductivity type; and is divided into 4 grades according to the difference in technical indicators. 5 Technical Requirements 5.1 Technical indicators The grade and related technical indicators of polycrystalline silicon shall comply with the provisions of Table 1. 6 Test Methods 6.1 Before testing polycrystalline silicon for donor impurity content, acceptor impurity content, carbon content, conductivity type, resistivity, minority carrier lifetime, and oxygen content, the polycrystalline silicon shall be made into a monocrystalline specimen according to the methods in GB/T 4059, GB/T 4060 or GB/T 29057. 6.2 The inspection of donor impurity content and acceptor impurity content in polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 24574 or GB/T 24581. The arbitration inspection shall be carried out in accordance with the provisions of GB/T 24581. 6.3 The inspection of carbon content in polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1558 or GB/T 35306. The arbitration inspection shall be carried out in accordance with the provisions of GB/T 35306. 6.4 The inspection of the basis metal impurity content of the polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 37049. 6.5 The inspection of surface metal impurity content of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 24582. 6.6 The inspection of conductivity type of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1550. 6.7 The inspection of resistivity of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1551. 6.8 The inspection of minority carrier lifetime of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1553. 6.9 The inspection of oxygen content of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1557 or GB/T 35306. The arbitration inspection shall be carried out in accordance with the provisions of GB/T 35306. 6.10 The size distribution range of bulk polycrystalline silicon is tested by screening. The dimensions and deviations of rod-shaped polycrystalline silicon are measured with measuring tools of corresponding accuracy. 6.11 The inspection of polycrystalline silicon structure (oxidation interlayer, temperature interlayer) shall be carried out in accordance with the provisions of GB/T 4061. 6.12 The particle size of the cross-section edge of polycrystalline silicon shall be measured with measuring tools of corresponding accuracy, and other surface quality shall be visually inspected. and surface metal impurity content, double sampling shall be required to be taken for that unqualified item for reinspection. If the reinspection results are still unqualified, the batch of products shall be deemed to be unqualified. 7.5.2 The judgment of conductivity type, resistivity, minority carrier lifetime, oxygen content, size and tolerance, structure, and surface quality inspection results shall be determined through negotiation between the supplier and the purchaser. 8 Marking, Packaging, Transportation, Storage and Accompanying Documents 8.1 Marking The outside of the product packaging box shall be marked with the words or signs of "Handle with Care" and "Moisture-proof", and indicate: a) Product name and designation; b) Product quantity and net weight; c) Name of supplier. 8.2 Packaging The product is packed into clean polyethylene packaging bags and sealed. When packaging, the polyethylene packaging bag shall be prevented from being damaged to avoid external contamination of the product; and good protection shall be provided before being packed into the outer packaging box. The packaging of polycrystalline silicon can also be determined through negotiation between the supplier and the purchaser. 8.3 Transportation During transportation, products shall be loaded and unloaded with care, not pressed or squeezed, and shock-proof measures shall be taken. 8.4 Storage Product shall be stored in a clean and dry environment. 8.5 Accompanying documents Each batch of products shall be accompanied by accompanying documents, which shall include the following contents in addition to supplier information, product information, this Document number, exit-factory date or packaging date. ......
 
Source: Above contents are excerpted from the PDF -- translated/reviewed by: www.chinesestandard.net / Wayne Zheng et al.