GB/T 25074-2017 PDF in English
GB/T 25074-2017 (GB/T25074-2017, GBT 25074-2017, GBT25074-2017)
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| GB/T 25074-2017 | English | 80 |
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Solar-grade polycrystalline silicon
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| GB/T 25074-2010 | English | 239 |
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Solar-grade polycrystalline silicon
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GB/T 25074-2017: PDF in English (GBT 25074-2017) GB/T 25074-2017
GB
NATIONAL STANDARD OF THE
PEOPLE’S REPUBLIC OF CHINA
ICS 29.045
H 82
Replacing GB/T 25074-2010
Solar-grade polycrystalline silicon
太阳能级多晶硅
ISSUED ON: NOVEMBER 1, 2017
IMPLEMENTED ON: MAY 1, 2018
Issued by: General Administration of Quality Supervision, Inspection and
Quarantine of PRC;
Standardization Administration of PRC.
Table of Contents
Foreword ... 3
1 Scope ... 5
2 Normative references ... 5
3 Terms and definitions ... 6
4 Grade and classification ... 6
5 Requirements ... 7
6 Test method ... 8
7 Inspection rules ... 9
8 Marking, packaging, transportation, storage, and quality certificate ... 10
9 Contents of order form (or contract) ... 11
Appendix A (Informative) Reference technical indexes of solar-grade polycrystalline
silicon ... 13
Solar-grade polycrystalline silicon
1 Scope
This standard specifies the terms and definitions, grades and classifications,
requirements, test methods, inspection rules, marking, packaging, transportation,
storage, and quality certificates of solar-grade polycrystalline silicon.
This standard applies to rod-shaped polycrystalline silicon grown from chlorosilane and
silane or polycrystalline silicon blocks formed by crushing.
2 Normative references
The following documents are essential to the application of this document. For the dated
referenced documents, only the versions with the indicated dates are applicable to this
document; for the undated referenced documents, only the latest version (including all
the amendments) is applicable to this document.
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting
materials
GB/T 1551 Test method for measuring resistivity of monocrystal silicon - In-line
four-point probe and direct current two-point probe method
GB/T 1553 Test methods for minority carrier lifetime in bulk silicon and
germanium - Photoconductivity decay method
GB/T 1557 Test method for determining interstitial oxygen content in silicon by
infrared absorption
GB/T 1558 Test method for substitutional atomic carbon content of silicon by
infrared absorption
GB/T 4059 Test method for phosphorus content in polycrystalline silicon by zone-
melting method under controlled atmosphere
GB/T 4060 Test method for boron content in polycrystalline silicon by vacuum
zone-melting method
GB/T 13389 Practice for conversion between resistivity and dopant density for
boron-doped, phosphorus-doped, and arsenic-doped silicon
GB/T 14264 Semiconductor materials - Terms and definitions
GB/T 14844 Designations of semiconductor materials
GB/T 24574 Test methods for photoluminescence analysis of single crystal silicon
for III-V impurities
GB/T 24581 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon -
Low temperature FT-IR analysis method
GB/T 24582 Test method for measuring surface metal impurity content of
polycrystalline silicon - Acid extraction-inductively coupled plasma mass
spectrometry method
GB/T 29057 Practice for evaluation of polycrystalline silicon rods by float-zone
crystal growth and spectroscopy
GB/T 29849 Test method for measuring surface metallic contamination of silicon
materials used for photovoltaic applications by inductively coupled plasma mass
spectrometry
GB/T 31854 Test method for measuring metallic impurities content in silicon
materials used for photovoltaic applications by inductively coupled plasma mass
spectrometry
3 Terms and definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 Grade and classification
4.1 Grade
The grades of solar-grade polycrystalline silicon products shall meet the requirements
of GB/T 14844.
4.2 Classification
Solar-grade polycrystalline silicon is divided into block and rod according to the shape,
divided into N-type and P-type according to the conductivity type, and divided into four
grades according to the difference in technical indexes.
5.3 Surface quality
5.3.1 No-need-to-cleaning or after-cleaning polycrystalline silicon shall meet the
requirements for direct use. The classification requirements for the surface quality of
polycrystalline silicon are generally as follows:
a) Dense polysilicon: The depth of surface particle dimples is less than 5 mm, the
cross-sectional structure is dense, the appearance has no abnormal color, and
there is no oxidized interlayer;
b) Popcorn polysilicon: The depth of surface particle dimples is 5 mm~20 mm,
the appearance has no abnormal color, and there is no oxidized interlayer;
c) Coral polysilicon: The cross-sectional structure is loose, the depth of surface
particle dimple is ≥20 mm, the appearance has no abnormal color, and there is
no oxidized interlayer.
5.3.2 Other classification requirements for the surface quality of polycrystalline silicon
shall be agreed upon between the supplier and the purchaser.
6 Test method
6.1 Before the test of donor impurity concentration, acceptor impurity concentration,
oxygen concentration, carbon concentration, minority carrier lifetime, conductivity
type, and resistivity of polycrystalline silicon, single crystal samples are required to be
prepared according to the methods specified in GB/T 4059, GB/T 4060 or GB/T 29057.
6.2 The determination of donor impurity concentration and acceptor impurity
concentration in polycrystalline silicon shall be carried out according to the provisions
of GB/T 24574 or GB/T 24581, or converted according to the methods specified in
GB/T 1551 and GB/T 13389. Arbitration inspection shall be carried out in accordance
with the provisions of GB/T 24581.
6.3 The determination of oxygen concentration in polycrystalline silicon shall be carried
out according to the provisions of GB/T 1557.
6.4 The determination of carbon concentration in polycrystalline silicon shall be carried
out according to the provisions of GB/T 1558.
6.5 The determination of minority carrier lifetime in polycrystalline silicon shall be
carried out according to the provisions of GB/T 1553.
6.6 The determination of the metal impurity content of the polycrystalline silicon matrix
shall be carried out in accordance with the provisions of GB/T 31854.
6.7 The determination of the metal impurity content on the surface of polycrystalline
silicon shall be carried out according to the provisions of GB/T 24582 or GB/T 29849.
Arbitration inspection shall be carried out according to the provisions of GB/T 29849.
6.8 The inspection of the conductivity type of polycrystalline silicon shall be carried
out according to the provisions of GB/T 1550.
6.9 The determination of the resistivity of polycrystalline silicon shall be carried out
according to the provisions of GB/T 1551.
6.10 The dimension distribution range of polycrystalline silicon blocks shall be
inspected by sieving, or by a method agreed upon by the supplier and the purchaser.
The dimensions of the rod-shaped polycrystalline silicon are measured with a
measuring tool of corresponding precision.
6.11 The surface quality of polycrystalline silicon is inspected visually.
7 Inspection rules
7.1 Inspection and acceptance
7.1.1 The product shall be inspected by the quality supervision department of the
supplier to ensure that the product quality complies with the provisions of this standard;
the product quality certificate shall be filled in.
7.1.2 The buyer can inspect the received products. If the test results are inconsistent
with the provisions of this standard, it shall be reported to the supplier within 3 months
from the date of receipt of the product, and the supplier and the buyer shall negotiate to
resolve it.
7.2 Batch formation
Products shall be submitted for acceptance in batches, and each batch shall be composed
of polycrystalline silicon of the same grade, which is produced under similar process
conditions and traceable to the production conditions.
7.3 Inspection items
7.3.1 Each batch of products shall be inspected for donor impurity concentration,
acceptor impurity concentration, oxygen concentration, carbon concentration, minority
carrier lifetime, dimensions, and surface quality.
7.3.2 The matrix metal impurity content and the surface metal impurity content are the
items of type inspection, and the inspection frequency is determined through
negotiation between the supplier and the buyer.
c) the product quantity and net weight.
8.2 Packaging
The polycrystalline silicon shall be put into a clean high-purity resin packaging bag and
sealed, and the dense polysilicon shall be packed into a double-layer clean packaging
bag; then, the packaging bag is put into a packing box or drum. The packaging for
polycrystalline silicon blocks is based on customer requirements; the rod-shaped
polycrystalline silicon is fixed in a box and sealed with double-layer clean high-purity
resin packaging bags. When packaging, the packaging bag shall be prevented from
being damaged to avoid external contamination of the product and provide good
protection.
8.3 Transportation
During transportation, the product shall be loaded and unloaded lightly, not pressed or
squeezed, and anti-shock measures shall be taken.
8.4 Storage
The product shall be stored in a clean and dry environment.
8.5 Quality certificate
Each batch of products shall be accompanied by a quality certificate stating:
a) the supplier’s name;
b) the product name and grade;
c) the product batch number;
d) the gross weight and net weight of the product;
e) inspection results of all items and inspection department stamps;
f) the number of this standard;
g) the date of manufacture.
9 Contents of an order form (or contract)
The order form for the products listed in this standard shall include the following
contents:
a) the product name;
......
Source: Above contents are excerpted from the PDF -- translated/reviewed by: www.chinesestandard.net / Wayne Zheng et al.
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