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GB/T 29506-2013 English PDF

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GB/T 29506-2013: 300 mm polished monocrystalline silicon wafers
Status: Valid
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GB/T 29506-2013English209 Add to Cart 3 days [Need to translate] 300 mm polished monocrystalline silicon wafers Valid GB/T 29506-2013

PDF similar to GB/T 29506-2013


Standard similar to GB/T 29506-2013

GB/T 12963   GB/T 29055   GB/T 31854   GB/T 25074   GB/T 29508   GB/T 29504   

Basic data

Standard ID GB/T 29506-2013 (GB/T29506-2013)
Description (Translated English) 300 mm polished monocrystalline silicon wafers
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H82
Classification of International Standard 29.045
Word Count Estimation 9,918
Quoted Standard GB/T 1550; GB/T 1554; GB/T 1555; GB/T 1557; GB/T 1558; GB/T 2828.1; GB/T 4058; GB/T 6616; GB/T 6624; GB/T 11073; GB/T 13388; GB/T 14140; GB/T 14264; GB/T 19921; GB/T 19922; GB/T 24578; GB/T 26067; GB/T 29504; GB/T 29507; GB/T 29508; YS/T 26; YS/T 679; SEM
Regulation (derived from) National Standards Bulletin 2013 No. 6
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This standard specifies the diameter of 300mm, p -type, (100) crystal orientation, resistivity 0. 5�� �� cm ~ 20�� �� cm polished silicon single crystal specification of terms and definitions, technical requirements, test methods face detection rules and sign

GB/T 29506-2013: 300 mm polished monocrystalline silicon wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
300 mm polished mnonocrystalline silicon wafers ICS 29.045 H82 National Standards of People's Republic of China 300mm polished silicon single crystal Issued on. 2013-05-09 2014-02-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and focal points. This standard was drafted. Grinm Semiconductor Materials Co., Ltd., China Nonferrous Metals Industry Institute of Standards and Metrology and Quality. The main drafters of this standard. Yan Zhi Rui, Sun Yan, Sheng Fangyu, Lu Liyan, Zhang Guo Hu, to Lei. 300mm polished silicon single crystal

1 Scope

This standard specifies the diameter of 300mm, p-type < 100> crystal orientation, resistivity of 0.5Ω · cm ~ 20Ω · cm polished silicon single crystal specifications Terms and definitions, technical requirements, test methods, testing rules and signs, packaging, transportation, storage and so on. This standard applies to a diameter of 300mm monocrystalline Czochralski silicon single crystal polished by grinding sheet double-sided polishing preparation, the products are used to meet IC IC 90nm technology needs with the substrate sheet width.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 1550 extrinsic conductivity type semiconductor material testing methods GB/T 1554 crystallographic perfection of silicon by preferential etch test methods GB/T 1555 to the measurement method of a semiconductor single crystal GB/T 1557 interstitial oxygen content in the silicon crystal infrared absorption measurement method GB/T 1558 silicon substitutional atomic carbon content by infrared absorption method GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan GB/T 4058 Test Method polished silicon oxide induced defects GB/T 6616 resistivity of semiconductor silicon and silicon thin film sheet resistance test method of non-contact eddy current method GB/T 6624 polished silicon surface quality by visual inspection Methods of measurement GB/T 11073 radial resistivity variation on silicon GB/T 13388 wafer reference surface X-ray crystallographic orientation measurements GB/T 14140 wafer diameter measuring method GB/T 14264 semiconductor material terms GB/T 19921 Test Method polished silicon surface of the particles GB/T 19922 wafer local flatness noncontact Standard Test Method GB/T 24578 metal contamination of the wafer surface total reflection X-ray fluorescence spectrometry test methods GB/T 26067 Test Method wafer notch size GB/T 29504 300mm silicon single crystal GB/T 29507 wafer flatness, thickness and total thickness variation of the non-contact testing automatic scanning GB/T 29508 300mm monocrystalline silicon cutting discs and grinding sheet YS/T 26 wafer edge profile test methods YS/T 679 unsteady surface photovoltage test method intrinsic semiconductor minority carrier diffusion length Non-contact automatic scan test method SEMIMF1390 of wafer warpage

3 Terms and Definitions

Terms and definitions GB/T 14264 apply to this document defined.

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