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GB/T 11094-2020: Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method
Status: Valid GB/T 11094: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 11094-2020 | English | 209 |
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Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method
| Valid |
GB/T 11094-2020
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| GB/T 11094-2007 | English | 399 |
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Horizontal Bridgman grown gallium arsenide single crystal and cutting wafer
| Obsolete |
GB/T 11094-2007
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| GB/T 11094-1989 | English | 359 |
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Boat-grown gallium arsenide single crystals and As-cut slices
| Obsolete |
GB/T 11094-1989
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PDF similar to GB/T 11094-2020
Basic data | Standard ID | GB/T 11094-2020 (GB/T11094-2020) | | Description (Translated English) | Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H83 | | Classification of International Standard | 29.045 | | Word Count Estimation | 11,197 | | Date of Issue | 2020-09-29 | | Date of Implementation | 2021-08-01 | | Older Standard (superseded by this standard) | GB/T 11094-2007 | | Regulation (derived from) | National Standard Announcement No. 20 of 2020 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 11094-2020: Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method
ICS 29.045
H83
National Standards of People's Republic of China
Replace GB/T 11094-2007
Horizontal method gallium arsenide single crystal and cutting wafer
bridgmanmethod
2020-09-29 released
2021-08-01 implementation
State Administration for Market Regulation
Issued by the National Standardization Management Committee
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 11094-2007 "Horizontal Method Gallium Arsenide Single Crystal and Cutting Chip". Compared with GB/T 11094-2007, except for
In addition to the editorial modification, the main technical changes are as follows.
--- Deleted single crystal ingots and microwave devices in the scope (see Chapter 1 of the.2007 edition);
--- Deleted GJB1927 in the normative references, and added GB/T 13388, GB/T 14844 (see Chapter 2,.2007
Chapter 2 of the edition);
--- Deleted 3.1~3.8 in terms and definitions (see Chapter 3 of the.2007 edition);
---Modified the product brand representation and classification (see Chapter 4, Chapter 4 of the.2007 edition);
---Modified the deflection angle in the growth direction of gallium arsenide single crystal (see 5.1.1, 4.3.1 in.2007 edition);
---Deleted the requirements and test methods for semi-insulating gallium arsenide single crystals (see 4.3.2, 4.4.3, 5.1 in.2007 edition);
--- Delete the requirement of n-type non-doped gallium arsenide single crystal (see 4.3.2 of the.2007 edition);
---Modified the carrier concentration range of p-type zinc-doped gallium arsenide single crystal (see 5.1.2,.2007 edition 4.3.2);
---Modified the classification and requirements of dislocation density (see 5.1.3, 4.3.3 of the.2007 edition);
---Added 82.0mm diameter gallium arsenide cutting wafer and corresponding gallium arsenide single crystal requirements (see 5.1.4.2, 5.2);
---The height error of the crystal ingot is not more than 4mm, and the thickness change of the single crystal should not be more than 2mm (see 5.1.4.2, 4.4.1 of the.2007 edition);
---Added descriptions about the electrical properties and dislocation density of gallium arsenide cutting wafers (see 5.2.1);
---Modified the requirements for the thickness of gallium arsenide cutting wafers (see 5.2.3, 4.5.1 of the.2007 edition);
--- Modified the requirements for the deviation of the crystal orientation of the GaAs cutting wafer (see 5.2.4, 4.5.2 of the.2007 edition);
---Modified the test method of gallium arsenide single crystal and cutting wafer (see Chapter 6, Chapter 5 of the.2007 edition);
---Relevant contents of the inspection rules for gallium arsenide single crystals and dicing wafers have been revised (see Chapter 7, Chapter 6 of the.2007 edition).
This standard is composed of the National Semiconductor Equipment and Material Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Material Standard
The material sub-committee of the Chemical Technology Committee (SAC/TC203/SC2) jointly proposed and managed.
Drafting organizations of this standard. Youyan Optoelectronics New Materials Co., Ltd., Non-ferrous Metal Technology and Economic Research Institute, Guangdong Leading Advanced Materials Co., Ltd.
Co., Ltd., Beijing Jurui Zhongbang Technology Co., Ltd., Aptop (Fujian) New Materials Co., Ltd.
The main drafters of this standard. Yu Hongguo, Lin Quan, Ma Yingjun, Zhao Jingping, Li Suqing, Ma Yuanfei, Li Wanpeng, Xu Suocheng, Quan Pan, Zhu Liu,
Zhou Tiejun, Yan Fangliang, Yang Lixia, Fu Ping.
The previous versions of the standard replaced by this standard are as follows.
---GB/T 11094-1989, GB/T 11094-2007.
Horizontal method gallium arsenide single crystal and cutting wafer
1 Scope
This standard specifies the grades, classifications, requirements, test methods,
Inspection rules, signs, packaging, transportation, storage, quality certificates and purchase order (or contract) content.
This standard applies to gallium arsenide single crystals and cutting wafers used in optoelectronic devices and sensing elements.
2 Normative references
The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article
Pieces. For undated references, the latest version (including all amendments) applies to this document.
GB/T 1555 Method for determination of crystal orientation of semiconductor single crystals
GB/T 2828.1-2012 Sampling inspection procedure by attributes Part 1.Batch inspection sampling searched by acceptance quality limit (AQL)
plan
GB/T 4326 Extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method
GB/T 8760 Method for measuring dislocation density of gallium arsenide single crystal
GB/T 13388 Crystallographic orientation X-ray measurement method of silicon wafer reference plane
GB/T 14264 Terminology of Semiconductor Materials
GB/T 14844 Semiconductor material designation method
3 Terms and definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 Grades and classifications
4.1 Grade
The grades of gallium arsenide single crystals and cutting wafers are expressed in accordance with the regulations of GB/T 14844.If there are special requirements, negotiated by both parties
And indicate in the order form (or contract).
4.2 Classification
4.2.1 GaAs single crystals are divided into n-type and p-type according to the conductivity type.
4.2.2 GaAs cutting discs are divided into four specifications according to their diameters. 50.8mm, 63.5mm, 76.2mm and 82.0mm.
5 requirements
5.1 Gallium arsenide single crystal
5.1.1 Growth direction
The gallium arsenide single crystal grows in the near < 111>B direction or (110) crystal strip from < 111>B to the farthest < 100> direction deflection 0°~15°, by the supply
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