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Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
GB/T 11072-2009 | English | 189 |
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Indium antimonide polycrystal, single crystals and as-cut slices
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GB/T 11072-2009
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GB/T 11072-1989 | English | 359 |
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Indium antimonide polycrystal, single crystals and as-cut slices
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GB/T 11072-1989
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PDF similar to GB/T 11072-2009
Basic data Standard ID | GB/T 11072-2009 (GB/T11072-2009) | Description (Translated English) | Indium antimonide polycrystal, single crystals and as-cut slices | Sector / Industry | National Standard (Recommended) | Classification of Chinese Standard | H83 | Classification of International Standard | 29.045 | Word Count Estimation | 8,824 | Date of Issue | 2009-10-30 | Date of Implementation | 2010-06-01 | Older Standard (superseded by this standard) | GB/T 11072-1989 | Quoted Standard | GB/T 4326; GB/T 8759; GB/T 11297 | Regulation (derived from) | National Standard Approval Announcement 2009 No.12 (Total No.152) | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | Summary | This standard specifies the polycrystalline indium antimonide, single crystal and single crystal cut sheet product categories, technical requirements and test methods. This standard applies to zone melting indium antimonide prepared by and for the production of polycrystalline infrared detectors and magnetic components such as Czochralski prepared by using polycrystalline InSb, monocrystalline and cut slices. |
GB/T 11072-2009: Indium antimonide polycrystal, single crystals and as-cut slices---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Indium antimonide polycrystal, single crystals and as-cut slices
ICS 29.045
H83
National Standards of People's Republic of China
Replacing GB/T 11072-1989
InSb polycrystalline, monocrystalline and cutting sheet
Posted 2009-10-30
2010-06-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard replaces GB/T 11072-1989 "InSb polycrystalline, monocrystalline and cut pieces."
This standard compared with GB/T 11072-1989, the main changes are as follows.
--- Original standard diameter of 10mm ~ 50mm all changed 10mm ~ 200mm;
--- In the original standard based on the increase in diameter > 50mm, thickness not less than 1200μm, thickness deviation ± 40μm;
--- Original standard dislocation density level ≥30mm ~ 50mm diameter all changed 1,2,3 ≥30mm ~ 200mm;
--- In the original standard based on the increase of the diameter of 100mm, 150mm, cutting disc diameter, 200mm length and the reference surface
deviation;
--- Original standard Appendix A removed, increment the reference standard GB/T 11297;
--- Added "orders (or contract) Contents" chapter.
This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed.
This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material.
This standard was drafted. Emei Semiconductor Material Factory.
The main drafters of this standard. Wang Yan, Helan Ying, Zhang Mei.
This standard replaces the standards previously issued as follows.
--- GB/T 11072-1989.
InSb polycrystalline, monocrystalline and cutting sheet
1 Scope
1.1 standard specifies the indium antimonide polycrystal, single crystal and single crystal cutting sheet product classification, technical requirements and test methods.
1.2 This standard applies to zone melting with antimony, indium antimonide and polycrystalline Prepared for making infrared detectors and magnetic components prepared by Czochralski etc.
Indium polycrystalline, monocrystalline and cutting sheet.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 4326 extrinsic semiconductor crystal Hall mobility and Hall coefficient measurements
GB/T 8759 to the compound semiconductor single crystal X-ray diffraction measurement method
GB/T 11297 indium antimonide single crystal dislocation etch pits in the display and measurement methods
3 Product Categories
3.1 conductivity type, size
3.1.1 polycrystalline
Polycrystalline conductivity type is n-type, according to the carrier mobility divided into three levels.
3.1.2 Single Crystal
Indium antimonide single conductive type divided by n-type and p-type dopant to the carrier concentration and mobility classification, according to the diameter of the dislocation density
Divided into three levels.
3.1.3 Cutting sheet
3.1.2 Classification and grading according to a thickness of not less than 500μm.
Grade 3.2
3.2.1 InSb polycrystalline and single crystal grade is expressed as.
InSb -
1
2
3
1 --- represented by PInSb InSb polycrystalline, MInSb represents indium antimonide single crystal;
2 --- chemical element symbols dopant;
3 --- Arabic numerals product grades.
If the product is not doped or graded, the corresponding portion may be omitted.
3.2.2 indium antimonide single cut sheet grade is expressed as.
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