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GB/T 35308-2017 English PDF

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GB/T 35308-2017: Epitaxial wafers of germanium based Ⅲ-Ⅴ compounds for solar cell
Status: Valid
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GB/T 35308-2017English279 Add to Cart 3 days [Need to translate] Epitaxial wafers of germanium based Ⅲ-Ⅴ compounds for solar cell Valid GB/T 35308-2017

PDF similar to GB/T 35308-2017


Standard similar to GB/T 35308-2017

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Basic data

Standard ID GB/T 35308-2017 (GB/T35308-2017)
Description (Translated English) Epitaxial wafers of germanium based ��-�� compounds for solar cell
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H83
Classification of International Standard 29.045
Word Count Estimation 14,156
Date of Issue 2017-12-29
Date of Implementation 2018-07-01
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 35308-2017: Epitaxial wafers of germanium based Ⅲ-Ⅴ compounds for solar cell

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Epitaxial wafers of germanium based III-Vcompounds for solar cell ICS 29.045 H83 National Standards of People's Republic of China Germanium-based III-V compound epitaxial wafers for solar cells Epitaxial wafers ofgermaniumbasedⅢ-Ⅴcompoundsforsolarcel 2017-12-29 Posted 2018-07-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards Technical Committee Sub-Technical Committee on Materials (SAC/TC203/SC02) co-sponsored and centralized. This standard was drafted unit. San'an Optoelectronics Co., Ltd. of Tianjin, Xiamen City Sanan Optoelectronics Technology Co., Ltd., non-ferrous metal technology Economic Research Institute. The main drafters of this standard. Bi Jingfeng, Song Minghui, Li Senlin, Chen Wenjun, Wu Chao Yu, Wang Du Xiang, Yang Su heart. Germanium-based III-V compound epitaxial wafers for solar cells

1 Scope

This standard specifies the solar cells germanium-based III-V compound epitaxial wafers (hereinafter referred to as "epitaxial wafers") terms and definitions, and Grades, requirements, test methods, inspection rules and marking, packaging, transportation, storage and quality certificate. This standard applies to germanium-based solar cells III-V compound epitaxial wafers.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 2828.1 Sampling procedures for sampling inspection - Part 1. Batch inspection sampling plan retrieved by acceptance quality limit (AQL) Visual inspection of GB/T 6624 surface quality of silicon polishing GB/T 8758 gallium arsenide epitaxial layer thickness infrared interferometry method Silicon epitaxial layer carrier concentration measurement mercury probe capacitance - voltage method GB/T 14264 semiconductor materials terminology Determination of boron contamination in heavy doped n - type silicon substrate by GB/T 24580 secondary ion mass spectrometry GB/T 31227 Atomic Force Microscopy method for measuring the surface roughness of sputtered films

3 Terms and definitions

GB/T 14264 and defined by the following terms and definitions apply to this document. 3.1 White dots whitedots Epitaxial wafer diameter greater than 1mm, and less than 2mm bright spots. 3.2 Chip contamination wafercontamination Non-directional astigmatism with a diameter larger than 2 mm is formed on the surface of the epitaxial wafer due to abnormalities in the substrate processing or epitaxial process. 3.3 Lattice mismatch latticemismatch Is numerically equal to the difference between the epitaxial layer lattice constant ae and the substrate lattice constant a0 divided by the substrate lattice constant a0, Constant for the lattice lattice match.

4 classification and grades

4.1 Classification 4.1.1 epitaxial wafer structure in accordance with the extension is divided into lattice-matched cell epitaxial wafers and lattice mismatch cell epitaxial wafers. 4.1.2 epitaxial wafers by substrate diameter is divided into Φ50mm, Φ100mm, Φ150mm, Φ200mm four.

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