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 GB/T 36706-2018: Polycrystalline indium phosphide
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 Basic data             | Standard ID | GB/T 36706-2018 (GB/T36706-2018) |           | Description (Translated English) | Polycrystalline indium phosphide |           | Sector / Industry | National Standard (Recommended) |           | Classification of Chinese Standard | H83 |           | Classification of International Standard | 29.045 |           | Word Count Estimation | 6,686 |           | Date of Issue | 2018-09-17 |           | Date of Implementation | 2019-06-01 |           | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 36706-2018: Polycrystalline indium phosphide---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.Polycrystalline indium phosphide
ICS 29.045
H83
National Standards of People's Republic of China
Indium phosphide polycrystal
Published on.2018-09-17
2019-06-01 implementation
State market supervision and administration
China National Standardization Administration issued
 ForewordThis standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards.
The Technical Subcommittee of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Nanjing Jinmei Gallium Industry Co., Ltd., Nonferrous Metals Technology and Economic Research Institute, China Electronics Technology Group Corporation
Research Institute, Guangdong Pioneer Materials Co., Ltd., Shijiazhuang Meiteda Electronic Technology Co., Ltd., Institute of Semiconductors, Chinese Academy of Sciences, Cloud
Nanzhongke Xinyuan Crystal Material Co., Ltd.
The main drafters of this standard. Fan Jiayu, Xing Zhiguo, Yang Guifang, Liu Wenbing, Li Suqing, Wang Yang, Li Xiaotong, Sun Niefeng, Liu Huisheng,
Zhao Youwen, Hui Feng, Zhu Liu, Liu Yonghao.
Indium phosphide polycrystal1 ScopeThis standard specifies the requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate and order of indium phosphide polycrystal.
Single (or contract) content.
This standard applies to the production of indium phosphide polycrystals for indium phosphide single crystals.2 Normative referencesThe following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article.
Pieces. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 1423 Test method for density of precious metals and their alloys
GB/T 4326 extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method
GB/T 14844 semiconductor material grade representation3 requirements3.1 Brand
The grade of indium phosphide polycrystal shall be in accordance with the provisions of GB/T 14844.
3.2 Electrical performance
The electrical properties of indium phosphide polycrystals are to comply with the requirements of Table 1.
Table 1 Electrical properties
project
Claim
Class A, Class B, Class C, Class D, Class E
Carrier mobility
Cm2/(V·s)
≥4500 ≥3500 ≥3000 ≥2500 ≥2500
Carrier concentration
Atom/cm3
≤3×1015 ≤6×1015 ≤8×1015 ≤1×1016 ≤3×1016
3.3 Density
The theoretical density of indium phosphide polycrystal is 4.787g/cm3, and the deviation between measured density and theoretical density should be within ±5%, that is, the measured density should be
It is 4.548 g/cm3 to 5.026 g/cm3.
3.4 Appearance quality
The indium phosphide polycrystal is a gray solid with a dense surface, no pores, no indium rich, and no phosphorus.
 
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