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Std ID |
Description (Standard Title) |
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GB/T 37051-2018
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Test method for determination of crystal defect density in PV silicon ingot and wafer
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GB/T 8756-2018
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Collection of metallographs on defects of germanium crystal
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GB/T 34479-2017
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Specification for alphanumeric marking of silicon wafers
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GB/T 35316-2017
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Collection of metallographs on defects of sapphire crystal
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GB/T 32279-2015
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Specification for order entry format of silicon wafers
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GB/T 13389-2014
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Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
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GB/T 14863-2013
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Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
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GB/T 29505-2013
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Test method for measuring surface roughness on planar surfaces of silicon wafer
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GB/T 29507-2013
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Test method for measuring flatness, thickness and total thickness variation on silicon wafers -- Automated non-contact scanning
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GB/T 30110-2013
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Measuring methods of parameters of HgCdTe epilayers used for space infrared detectors
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GB/T 30453-2013
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Metallographs collection for original defects of crystalline silicon
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GB/T 29057-2012
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Practice for evaluation of polycrystalline silicon rods by float-zone crystal growth and spectroscopy
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GB/T 14847-2010
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Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
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GB/T 25075-2010
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Gallium arsenide single crystal for solar cell
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GB/T 25076-2010
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[Replaced by GB/T 25076-2018] Monocrystalline silicon of solar cell
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GB/T 26065-2010
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Specification for polished test silicon wafers
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GB/T 26066-2010
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Practice for shallow etch pit detection on silicon
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GB/T 26068-2010
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Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance
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GB/T 26069-2010
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Specification for silicon annealed wafers
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GB/T 26071-2010
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Mono-crystalline silicon as cut slices for photovoltaic solar cells
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GB/T 13387-2009
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Test method for measuring flat length wafers of silicon and other electronic materials
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GB/T 13388-2009
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Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
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GB/T 14139-2009
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Silicon epitaxial wafers
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GB/T 14141-2009
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Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
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GB/T 14144-2009
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Testing method for determination of radial interstitial oxygen variation in silicon
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GB/T 14146-2009
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Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
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GB/T 14264-2009
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Semiconductor materials -- Terms and definitions
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GB/T 1551-2009
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Test method for measuring resistivity of monocrystal silicon
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GB/T 1553-2009
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Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
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GB/T 1554-2009
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Testing method for crystallographic perfection of silicon by preferential etch techniques
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GB/T 1555-2009
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Testing methods for determining the orientation of a semiconductor single crystal
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GB/T 1558-2009
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Test method for substitutional atomic carbon content of silicon by infrared absorption
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GB/T 24574-2009
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Test methods for photoluminescence analysis of single crystal silicon for III-V impurities
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GB/T 24575-2009
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Test method for measuring surface sodium, aluminum, potassium, and iron on silicon and epi substrates by secondary ion mass spectrometry
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GB/T 24576-2009
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Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction
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GB/T 24577-2009
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Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography
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GB/T 24578-2009
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Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy
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GB/T 24579-2009
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Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy
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GB/T 24580-2009
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Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
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GB/T 24581-2009
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Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
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GB/T 24582-2009
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Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry
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GB/T 4058-2009
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Test method for detection of oxidation induced defects in polished silicon wafers
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GB/T 4061-2009
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Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion
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GB/T 6616-2009
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Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
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GB/T 6617-2009
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Test method for measuring resistivity of silicon wafer using spreading resistance probe
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GB/T 6618-2009
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Test method for thickness and total thickness variation of silicon slices
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GB/T 6619-2009
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Test methods for bow of silicon wafers
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GB/T 6621-2009
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Testing methods for surface flatness of silicon slices
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GB/T 6624-2009
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Standard method for measuring the surface quality of polished silicon slices by visual inspection
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GB/T 14264-1993
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Semiconductor materials-Terms and definitions
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GB/T 14844-1993
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Designations of semiconductor materials
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GB/T 1817-1995
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Test method of impact toughness of cemented carbides at room temperature
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GB/T 45326-2025
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Extra coarse grain cemented carbide tips for engineering
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GB/T 45339-2025
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General technical specification for the titanium alloy parts by hot isostatic pressing
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GB/T 10421-2025
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Sintered metal friction materials - Determination of density
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GB/T 10422-2025
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Sintered metal friction materials - Determination of transverse rupture strength
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GB/T 10423-2025
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Sintered metal friction materials - Determination of tensile strength
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GB/T 10425-2025
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Sintered metal friction materials - Determination of apparent hardness
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GB/T 46324-2025
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(Cemented carbide products for ultra precision optical dies)
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GB/T 10424-2025
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Sintered metal friction materials - Determination of compressive strength
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GB/T 41337-2022
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Additive manufacturing nickel-based alloy with powder bed fusion
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GB/T 26047-2022
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Insulators of primary lithium battery for pillar
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GB/T 26052-2022
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Tubular welding rods of tungsten carbide
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GB/T 41883-2022
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Additive manufacturing tantalum and tantalum alloy by powder bed fusion
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GB/T 11101-2020
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Cemented carbide blanks for round rods
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GB/T 38977-2020
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Nanometer grain cemented carbide rod
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GB/T 38981-2020
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Sintered-metal injection-moulded materials--Specifications
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GB/T 38987-2020
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Cemented carbide rods with helical coolant holes
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GB/T 6887-2019
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Sintered metal filter elements
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GB/T 38384-2019
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Spherical molybdenum powder
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GB/T 2081-2018
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Indexable hard metal (carbide) inserts with wiper edges, without fixing hole -- Dimensions
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GB/T 3462-2017
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Bars and plate blanks of molybdenum
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GB/T 14445-2017
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Carbide products for coal mining tools
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GB/T 34508-2017
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Additive manufacturing with TC4 alloys powder by bed electron beam melting
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GB/T 34646-2017
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Sintered metal membrane filter materials and elements
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GB/T 6883-2017
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Cemented carbide sintering body for wire, bar or tube drawing dies -- Dimensions
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GB/T 6886-2017
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Sintered stainless steel filter elements
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GB/T 32930-2016
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Microcrystalline cemented carbide rod
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GB/T 9097-2016
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Sintered metal materials, excluding hard metals -- Determination of apparent hardness and microhardness
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GB/T 14199-2010
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Electroacoustics - General specification for hearing aids
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GB/T 26047-2010
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Insulators of primary lithium battery for pillar
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GB/T 26052-2010
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Tubular welding rods of tungsten carbide
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GB/T 11101-2009
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Cemented carbide blanks for round rods
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GB/T 2527-2008
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Cemented carbide inserts for mining and oil-field bits
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GB/T 10417-2008
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Specifications for steel-bonded tungsten carbides and determination of its transverse rupture strength, impact toughness and hardness
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GB/T 10430-2008
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Inspection method for bonding ability of sintered friction elements
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GB/T 11102-2008
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Cemented carbide products for geological exploration drilling tools
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GB/T 3612-2008
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Cemented carbide blanks for gauge blocks or measuring tools
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GB/T 3879-2008
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Material blanks of steel bonded carbide
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GB/T 4164-2008
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Metallic powders -- Determination of hydrogen reducible oxygen content
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GB/T 6804-2008
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Sintered metal bushes -- Determination of radial crushing strength
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GB/T 6886-2008
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Sintered stainless steel filter elements
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GB/T 9095-2008
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Sintered ferrous materials, carburized or carbonitrided -- Determination and verification of case-hardening depth
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GB/T 6887-2007
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Sintered metal filter elements
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GB/T 20508-2006
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Tantalum carbide powder
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GB/T 5242-2006
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Check rules and test methods of cemented carbide products
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GB/T 5243-2006
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Marking, packing, transport and storage of cemented carbide products
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GB/T 10418-2002
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Steel bonded tungsten carbides -- Determination of transverse rupture strength
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GB/T 10419-2002
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Steel bonded tungsten carbides -- Determination of impact toughness
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GB/T 10420-2002
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Steel bonded tungsten carbides -- Determination of Rockwell hardness (scales C and A)
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