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GB/T 14264-2024: Terminology of semiconductor materials
Status: Valid GB/T 14264: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 14264-2024 | English | 1639 |
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9 days [Need to translate]
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Terminology of semiconductor materials
| Valid |
GB/T 14264-2024
|
| GB/T 14264-2009 | English | 1999 |
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7 days [Need to translate]
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Semiconductor materials -- Terms and definitions
| Obsolete |
GB/T 14264-2009
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| GB/T 14264-1993 | English | 879 |
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6 days [Need to translate]
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Semiconductor materials-Terms and definitions
| Obsolete |
GB/T 14264-1993
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PDF similar to GB/T 14264-2024
Basic data | Standard ID | GB/T 14264-2024 (GB/T14264-2024) | | Description (Translated English) | Terminology of semiconductor materials | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 82,864 | | Date of Issue | 2024-04-25 | | Date of Implementation | 2024-11-01 | | Older Standard (superseded by this standard) | GB/T 14264-2009 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 14264-2024: Terminology of semiconductor materials---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 29:045
CCSH80
National Standards of People's Republic of China
Replaces GB/T 14264-2009
Semiconductor Material Terminology
Released on 2024-04-25
2024-11-01 Implementation
State Administration for Market Regulation
The National Standardization Administration issued
Table of Contents
Preface III
1 Scope 1
2 Normative references 1
3 General terms 1
4 Material preparation and process 33
5 Defects 38
6 Abbreviations and abbreviations 47
Index 50
Foreword
This document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents"
Drafting:
This document replaces GB/T 14264-2009 "Terms of Semiconductor Materials": Compared with GB/T 14264-2009, except for the structural adjustment and
In addition to logical changes, the main technical changes are as follows:
--- Added 261 terms and their definitions such as "wide bandgap semiconductor" (see Chapter 3 to Chapter 5);
--- Deleted 64 terms and their definitions such as "ridge collapse" (see Chapter 3 of the:2009 edition);
--- Changed 62 terms and their definitions such as "compound semiconductor" (see Chapters 3 to 5, Chapter 3 of the:2009 edition):
Please note that some of the contents of this document may involve patents: The issuing organization of this document does not assume the responsibility for identifying patents:
This document was jointly issued by the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203) and the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203):
It is jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemical Technical Committee (SAC/TC203/SC2):
This document was drafted by: YUYAN Semiconductor Silicon Materials Co:, Ltd:, Nonferrous Metals Technology and Economics Research Institute Co:, Ltd:, Peking University
Dongguan Optoelectronics Research Institute, Nanjing Guosheng Electronics Co:, Ltd:, Yunnan Lincang Xinyuan Germanium Industry Co:, Ltd:, Qinghai Yellow River Upper Reaches Hydropower Development Co:, Ltd:
Limited Liability Company New Energy Branch, Shanghai Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Youyan Guojinghui New Materials Co:, Ltd:, Zhejiang Zhong
Jing Technology Co:, Ltd:, Jiangsu Zhongneng Silicon Technology Development Co:, Ltd:, Zhonghuan Leading Semiconductor Materials Co:, Ltd:, Xinte Energy Co:, Ltd:
Co:, Ltd:, Yichang CSG Silicon Materials Co:, Ltd:, Asia Silicon (Qinghai) Co:, Ltd:, China Electronics Technology Group Corporation 13th Research Institute
Institute, Sichuan Yongxiang Co:, Ltd:, Yunnan Chihong International Germanium Co:, Ltd:, Maxke Electronic Materials Co:, Ltd:, Zhejiang Haina Semiconductor
Conductor Co:, Ltd:, Changzhou Shichuang Energy Co:, Ltd:, Dongguan Zhongjia Semiconductor Technology Co:, Ltd:, Chinese Academy of Sciences Semiconductor
graduate School:
The main drafters of this document are: Sun Yan, He Dongjiang, Li Suqing, Ning Yongduo, Ding Xiaomin, Zhu Xiaotong, Luo Hong, Pu Shikun, Qin Rong, Hang Yin, Zheng Ansheng,
Gong Longfei, Cheng Fengling, Huang Xiaorong, Li Guopeng, Jin Peng, Wang Bin, Zhang Xuenan, Qiu Yanmei, Liu Wenming, Yin Donglin, Sun Niefeng, Li Shouqin, Cui Dingfang,
Shi Ge, Pan Jinping, Yin Shuyi, You Bailing:
This document was first issued in:1993, revised for the first time in:2009, and this is the second revision:
Semiconductor Material Terminology
1 Scope
This document defines general terms and definitions for semiconductor materials, terms and definitions for materials preparation and processes, and defects, as well as abbreviations:
This document applies to the research and development, production, preparation and related fields of semiconductor materials:
2 Normative references
This document has no normative references:
3 General terms
3:1
Semiconductor
The conductivity is between that of a conductor and an insulator: The resistivity is about 10-5Ω·cm~1012Ω·cm at room temperature:
A solid that has two types of carriers, negatively charged electrons and negatively charged electrons, and has a negative temperature coefficient of resistance, photoconductivity effect, and rectification effect:
substance:
Note: Semiconductors are divided into single crystal, polycrystalline and amorphous according to their structure:
3:2
An ideal semiconductor whose lattice is complete and free of impurities, and in which the number of electrons and holes participating in conduction is almost equal under thermal equilibrium conditions:
Note: An intrinsic semiconductor is a semiconductor that contains only trace amounts of impurities and has electrical conductivity very close to that of an ideal semiconductor:
3:3
A semiconductor material composed of atoms of a single element:
Note: Such as silicon, germanium, diamond, etc:
3:4
A semiconductor material formed by two or more different elements in a certain atomic ratio:
Note: Gallium arsenide (GaAs), indium phosphide (InP), cadmium telluride (CdTe), silicon carbide (SiC), gallium nitride (GaN), gallium oxide (GaO), indium gallium nitride (InGaN) and
Aluminum gallium indium phosphide (AlGaInP), etc:
3:5
It is usually a semiconductor material with a bandgap of not less than 2:3 eV:
Note: Common wide bandgap semiconductor materials include silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), gallium oxide (β-Ga2O3), diamond, aluminum nitride
(AlN) etc:
3:6
Semi-insulating GaAs
Gallium arsenide single crystal with resistivity greater than 1×107Ω·cm:
Note: Used as substrate material for microelectronic devices:
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