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GB/T 32279-2015: Specification for order entry format of silicon wafers
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 32279-2015 | English | 399 |
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Specification for order entry format of silicon wafers
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GB/T 32279-2015
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Basic data | Standard ID | GB/T 32279-2015 (GB/T32279-2015) | | Description (Translated English) | Specification for order entry format of silicon wafers | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 19,171 | | Date of Issue | 2015-12-10 | | Date of Implementation | 2017-01-01 | | Regulation (derived from) | National Standard Announcement 2015 No.38 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | GB/T 32279-2015: Specification for order entry format of silicon wafers---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Specification for order entry format of silicon wafers
ICS 29.045
H80
National Standards of People's Republic of China
Wafer order form input specification
2015-12-10 released
2017-01-01 Implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
China National Standardization Management Committee released
Foreword
This standard is drafted in accordance with the rules given in GB/T 1.1-2009.
This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the national semiconductor equipment and materials standards
(SAC/TC203/SC2) jointly proposed and centralized.
The drafting of this standard unit. universal silicon peak Electronics Co., Ltd., Zhejiang Province, silicon material quality inspection center, Hangzhou Heiner Semiconductor limited
Company, Nanjing Guosheng Electronics Co., Ltd., a new research materials Co., Ltd., Zhejiang Jinruihong Technology Co., Ltd., Jiangsu Association Xin silicon
Science and Technology Development Co., Ltd., China Nonferrous Metals Industry Standard Measurement Quality Institute.
The main drafters of this standard. Zhu Xingping, Lou Chunlan, Dai Wenxian, Mao Weizhong, Zhao Jiping, Wang Feiyao, Ma Linbao, Sun Yan,
Lin Qingxiang, Yang Suxin, Zou Jianqiu.
Wafer order form input specification
1 Scope
This standard specifies the format requirements and use of the wafer order.
This standard applies to silicon single crystal grinding film, silicon single crystal polishing film, silicon single crystal epitaxial wafers, solar cell silicon single crystal cutting sheet, solar energy
The order form of the polycrystalline silicon wafer for the pool should be used in the order of other semiconductor materials.
2 normative reference documents
The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this article
Pieces. For undated references, the latest edition (including all modifications) applies to this document.
GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials
GB/T 1551 silicon single crystal resistivity determination method
GB/T 1553 Photodiode attenuation method for the determination of minority carriers in silicon and germanium bodies
GB/T 1554 silicon crystal integrity chemical selective corrosion test method
GB/T 1555 Semiconductor single crystal crystal orientation method
Measurement of Interstitial Oxygen Content in Silicon Crystal by Infrared Absorption
Determination of Substituted Carbon Atom Content in Silicon by Infrared Absorption
GB/T 4058 Test method for oxidative inducing defects of silicon polishing sheets
GB/T 6618 Wafer thickness and total thickness variation test method
GB/T 6619 Test method for bending of silicon wafers
Non - contact test method for wobble of wafers GB/T 6620
GB/T 6621 wafer surface flatness test method
Test method for surface quality of GB/T 6624 silicon polishing sheet
Methods of measurement of radial resistivity change in silicon wafers GB/T
GB/T 12965 silicon single crystal cutting disc and grinding plate
GB/T 13387 Wafer and other electronic material Wafer reference surface length measurement method
GB/T 13388 silicon reference surface crystallographic orientation X - ray test method
GB/T 14139 silicon epitaxial wafers
Method for measuring the diameter of silicon wafers GB/T
Test method for crystal integrity of silicon epitaxial layers - Corrosion method GB/T 14142
GB/T 14144 Method for measuring the radial variation of interstitial oxygen content in silicon crystals
GB/T 14264 terminology for semiconductor materials
Measurement of Infrared Reflectance of Light - Doped Silicon Epitaxial Layer on heavily Doped Substrates
Test method for surface particles of silicon polished sheets GB/T 19921
Test Method for Total Reflection X - ray Fluorescence Spectra of Metal Stains on Si/T
GB/T 26068 Non-contact microwave reflection photoconductive attenuation test method for silicon carrier carrier lifetime
GB/T 26071 silicon single crystal cutting sheet for solar cells
GB/T 29055 Polycrystalline silicon wafers for solar cells
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