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GB/T 35316-2017: Collection of metallographs on defects of sapphire crystal
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| GB/T 35316-2017 | English | 439 |
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Collection of metallographs on defects of sapphire crystal
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GB/T 35316-2017
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Basic data | Standard ID | GB/T 35316-2017 (GB/T35316-2017) | | Description (Translated English) | Collection of metallographs on defects of sapphire crystal | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 22,251 | | Date of Issue | 2017-12-29 | | Date of Implementation | 2018-07-01 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | GB/T 35316-2017: Collection of metallographs on defects of sapphire crystal---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Collection of metallographs on defects of sapphire crystal
ICS 29.045
H80
National Standards of People's Republic of China
Sapphire crystal defect map
Published on.2017-12-29
2018-07-01 Implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
China National Standardization Administration released
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standard
Technical Subcommittee on Materials Technical Subcommittee (SAC/TC203/SC2) is jointly proposed and managed.
Drafting organizations of this standard. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai Daheng Optical Precision Machinery Co., Ltd., China
Institute of Physical and Chemical Technology of Xinjiang Academy of Sciences, Xinjiang Amethyst Photoelectric Technology Co., Ltd., Nonferrous Metals Technology and Economic Research Institute, Jiangsu Haolan Lanbao
Stone Technology Co., Ltd., Suzhou Hengjia Crystal Material Co., Ltd., Jiangsu Jixing New Material Co., Ltd., Dongguan Zhongye Semiconductor Technology Co., Ltd.
Company, Tianjin Sanan Optoelectronics Co., Ltd., Jiangxi Donghai Lanyu Optoelectronics Technology Co., Ltd., Dandong New Oriental Crystal Instrument Co., Ltd.
The main drafters of this standard. Xu Min, Hang Yin, Pan Shilie, Zhang Fangfang, Zhao Xingyi, Wei Jian, He Dongjiang, Wu Chengrong, Cai Jinrong, Xu Yongliang,
Ding Xiaomin, Wang Yuxiang, Li Guoping, Zhao Songbin, and Yang Suxin.
Sapphire crystal defect map
1 Scope
This standard specifies the terms and definitions of sapphire crystal defects, morphology characteristics and causes.
This standard applies to the inspection and analysis of various defects in the preparation of sapphire single crystal materials.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article
Pieces. For undated references, the latest version (including all amendments) applies to this document.
GB/T 8756 crystal defect map
GB/T 14264 Semiconductor Material Terms
GB/T 30453 silicon raw material defect map
3 Terms and Definitions
The terms and definitions defined in GB/T 8756, GB/T 14264 and GB/T 30453 apply to this document.
4 Sapphire crystal defects
4.1 Ingot Defects
4.1.1 crack
4.1.1.1 Morphological features
The grown sapphire crystal is sometimes complete in shape, but several cracks can be observed inside or at the edge of the crystal. In severe cases, the crystals can be seen as fragmented.
Piece. Examples of its topography are shown in Figures 1 through 4.
4.1.1.2 Cause
When the crystal is grown or annealed, the thermal field is unreasonable, and the temperature in the furnace changes too quickly, causing thermal stress in the crystal to cause excessive cracking;
The formation of external crushing stress in the crucible causes micro-cracks at the side walls of the crystal; when seedless crystal growth occurs or there are too many impurities in the raw material, it is easy to produce localized cracks.
Polycrystalline, leading to crystal cracking.
4.1.2 Devitrification (opaque)
4.1.2.1 Morphological Features
The sapphire crystals grown are translucent or opaque and mostly blackish. An example of its topography is shown in Figure 5.
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