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GB/T 29507-2013: Test method for measuring flatness, thickness and total thickness variation on silicon wafers -- Automated non-contact scanning
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 29507-2013 | English | 329 |
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Test method for measuring flatness, thickness and total thickness variation on silicon wafers -- Automated non-contact scanning
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GB/T 29507-2013
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Basic data | Standard ID | GB/T 29507-2013 (GB/T29507-2013) | | Description (Translated English) | Test method for measuring flatness, thickness and total thickness variation on silicon wafers -- Automated non-contact scanning | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 14,16 | | Quoted Standard | GB/T 14264 | | Regulation (derived from) | National Standards Bulletin 2013 No. 6 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | GB/T 29507-2013: Test method for measuring flatness, thickness and total thickness variation on silicon wafers -- Automated non-contact scanning
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Test method for measuring flatness, thickness and total thickness vsriation on silicon wafers. Automated non-contact scanning
ICS 29.045
H80
National Standards of People's Republic of China
Change test wafer flatness, thickness and total thickness
Automatic non-contact scanning
Testmethodformeasuringflatness, thicknessandtotalthicknessvariation
Issued on. 2013-05-09
2014-02-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and focal points.
This standard was drafted. Shanghai co-crystal silicon Material Co., Ltd. has semiconductor materials research.
The main drafters of this standard. Xu Xinhua, Wang Zhen, Sun Yan, Cao Zi.
Change test wafer flatness, thickness and total thickness
Automatic non-contact scanning
1 Scope
This standard specifies the diameter of not less than 50mm, thickness not less than cutting, grinding 100μm, the corrosion, polishing, epitaxial or other surfaces
Wafer flatness state test thickness and total thickness variation.
The standard non-destructive, non-contact automatic scan test method for clean, dry wafer flatness and thickness of the test, and not
By the thickness variation of the silicon wafer, the silicon wafer surface state influence and shape.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 14264 semiconductor material terms
3 Terms and Definitions
3.1 GB/T 14264 define the terms and definitions apply to this document.
3.2 Definitions and abbreviations wafer flatness parameters in Table 1.
Abbreviations 1 wafer flatness parameters and definitions
abbreviation
test
method
Datum plane
Datum plane
Plane constituting regions
Test parameters
GB IR
(Globalflatnessbacksidereferenceplane
idealrange)
The total surface of the back over the back surface
quality
Eligible area
TIR
GF3R
(Globalflatnessfrontsidereferenceplane
3pointsrange)
Plane TIR total of three elements to form the front surface
GF3D
(Globalflatnessfrontsidereference3
pointsdeviation)
Datum FPD total front surface composed of three
GFLR
(Globalflatnessfrontsidereferenceplane
least-squaresrange)
The total surface plane being constituted least squares
quality
Eligible area
TIR
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