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GB/T 14146-2021: Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method
Status: Valid GB/T 14146: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 14146-2021 | English | 259 |
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Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method
| Valid |
GB/T 14146-2021
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| GB/T 14146-2009 | English | 359 |
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Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
| Obsolete |
GB/T 14146-2009
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| GB/T 14146-1993 | English | 239 |
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Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Valtage-capacitance method
| Obsolete |
GB/T 14146-1993
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PDF similar to GB/T 14146-2021
Basic data | Standard ID | GB/T 14146-2021 (GB/T14146-2021) | | Description (Translated English) | Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Word Count Estimation | 14,150 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 14146-2021: Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for carrier concentration of silicon epitaxial layers-Capacitance-voltage method
ICS 77.040
CCSH21
National Standards of People's Republic of China
Replace GB/T 14146-2009
Measurement of Carrier Concentration in Silicon Epitaxial Layer
Capacitance-voltage method
Released on 2021-05-21
2021-12-01 implementation
State Administration of Market Supervision and Administration
Issued by the National Standardization Management Committee
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents"
Drafting.
This document replaces GB/T 14146-2009 "Silicon Epilayer Carrier Concentration Determination of Mercury Probe Capacitance-Voltage Method", and
Compared with GB/T 14146-2009, in addition to structural adjustments and editorial changes, the main technical changes are as follows.
a) The scope of this document has been changed, including the specified content and scope of application (see Chapter 1, Chapter 1 of the.2009 edition);
b) Delete GB/T 1552 in the normative reference documents, and add GB/T 1551, GB/T 6624, GB/T 14264 (see Section 2
Chapter, Chapter 2 of the.2009 edition);
c) Added terms and definitions (see Chapter 3);
d) The requirements of the test conditions are changed (see Chapter 4, 6.2 of the.2009 edition);
e) The formula in the principle of the mercury probe capacitance-voltage method has been deleted, and the expression of the principle has been changed (see 5.1, Chapter 3 of the.2009 edition);
f) Added the interference factors that affect the test results of the mercury probe debugging after sample preparation, test instrument operation, and test machine maintenance
(See 5.2.1);
g) The influence of the sample surface, mercury, and mercury capillary on the test results has been changed (see 5.2.2, 5.2.3, 5.2.4, 4.1 in the.2009 edition);
h) Added the influence of the thickness of the standard sample used to determine the compensation capacitor on the test results (see 5.2.7);
i) Added compensation capacitor zero adjustment or value determination, capacitance measurement circuit series resistance, and quality monitoring chip pair test for calibration instruments
The impact of results (see 5.2.8, 5.2.9, 5.2.10);
j) The requirements for deionized water and nitrogen in "reagents" are changed (see 5.3.4, 5.3.5, 5.3 and 5.5 of the.2009 edition);
k) The requirement for compressed air in the "reagent" has been added (see 5.3.6);
l) The requirements for capacitance meters have been changed [see 5.4.1c), 6.1.2, 6.1.3 of the.2009 edition];
m) The requirements of the digital voltmeter in the mercury probe capacitance-voltage test instrument are changed [see 5.4.1d), 6.1.3 of the.2009 edition;
n) Added requirements for spin-drying equipment, drying equipment, and airtight baking cavity (see 5.4.2, 5.4.3, 5.4.4);
o) Added the requirement that the surface visual inspection should be bright and clean after sample processing (see 5.5.1), and changed the chemical reagent processing steps of the sample
(See 5.5.2, 7.1~7.4 of the.2009 edition), adding a step of passivating the sample using a non-destructive method (see
5.5.3);
p) Deleted the preparation of low-resistance electrodes in "Instrument Calibration" (see 8.4 in the.2009 edition), and added corresponding content in "Test Procedures"
(See 5.7.2);
q) Added "Experimental Data Processing" (see 5.8);
r) "Precision" has been changed (see 5.9);
s) The method of measuring the carrier concentration of the non-contact capacitance-voltage method has been added (see Chapter 6);
t) The content of the test report is changed (see Chapter 7, Chapter 11 of the.2009 edition).
Please note that some of the contents of this document may involve patents. The issuing agency of this document is not responsible for identifying patents.
This document is composed of the National Semiconductor Equipment and Material Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Material Standards
The material subcommittee of the Chemical Technology Committee (SAC/TC203/SC2) jointly proposed and managed.
Drafting organizations of this document. Nanjing Guosheng Electronics Co., Ltd., Non-ferrous Metal Technology and Economic Research Institute Co., Ltd., CLP Jinghua
(Tianjin) Semiconductor Materials Co., Ltd., Youyan Semiconductor Materials Co., Ltd., Hebei Puxing Electronic Technology Co., Ltd., Zhejiang Jinrui
Hong Technology Co., Ltd., Semilab Trading (Shanghai) Co., Ltd., Wuxi China Resources Shanghua Technology Co., Ltd., Yiwu Limai New Materials
Limited company.
The main drafters of this document. Luo Hong, Pan Wenbin, Yang Suxin, Zhao Yang, Zhao Erjing, Zhang Jialei, Li Shenzhong, Huang Li, Yan Qin, Huang Yucheng,
Pi Kunlin.
This document was first published in.1993, revised for the first time in.2009, and this is the second revision.
Measurement of Carrier Concentration in Silicon Epitaxial Layer
Capacitance-voltage method
1 Scope
This document specifies the capacitance-voltage method to test the carrier concentration of the silicon epitaxial layer, including the mercury probe capacitance-voltage method and the non-contact electrical method.
Capacity-voltage method.
This document is applicable to the test of the carrier concentration of the homogeneous silicon epitaxial layer, the test range is 4×1013cm-3~8×1016cm-3, of which the silicon
The thickness of the epitaxial layer is more than twice the depth of the depletion layer under the test bias. Carrier concentration measurement of silicon single crystal polished wafers and homogeneous silicon carbide epitaxial wafers
The test can also refer to this document, where the non-contact capacitance-voltage method is not suitable for the test of carrier concentration of homogeneous silicon carbide epitaxial wafers.
2 Normative references
The contents of the following documents constitute the indispensable clauses of this document through normative references in the text. Among them, dated quotations
Only the version corresponding to that date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to
This document.
GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials
GB/T 1551 Determination of resistivity of silicon single crystals. Straight back probe method and DC two probe method
GB/T 6624 Visual inspection method for surface quality of polished silicon wafers
GB/T 14264 Terminology of Semiconductor Materials
GB/T 14847 Infrared reflectance measurement method for thickness of lightly doped silicon epitaxial layer on heavily doped substrate
3 Terms and definitions
The terms and definitions defined in GB/T 14264 are applicable to this document.
4 Test conditions
4.1 Ambient temperature. 22℃±3℃, temperature fluctuation is less than ±2℃.
4.2 Environmental humidity. 30%~50%.
4.3 The test environment should be equipped with electromagnetic shielding, antistatic device, well-grounded test machine, power frequency power filter device, and no corrosive gas around.
Atmosphere and vibration.
5 Mercury probe capacitance-voltage method
5.1 Principle
The mercury probe contacts the surface of the sample, forming a Schottky junction. An adjustable bias voltage is applied between the mercury probe and the sample to make the Schottky junction
The potential barrier width of φ is expanded in the epitaxial layer, and the carrier concentration of the sample at the expansion width of the barrier can be determined by the barrier capacitance, capacitance and voltage of the Schottky junction
The rate of change and the effective contact area between the mercury probe and the sample are calculated.
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