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GB/T 13389-2014: Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
Status: Valid GB/T 13389: Evolution and historical versions
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| GB/T 13389-2014 | English | 669 |
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Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
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GB/T 13389-2014
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| GB/T 13389-1992 | English | 759 |
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Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
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GB/T 13389-1992
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Basic data | Standard ID | GB/T 13389-2014 (GB/T13389-2014) | | Description (Translated English) | Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 29,231 | | Date of Issue | 12/31/2014 | | Date of Implementation | 9/1/2015 | | Older Standard (superseded by this standard) | GB/T 13389-1992 | | Quoted Standard | GB/T 1550; GB/T 1551; GB/T 4326; GB/T 14264 | | Regulation (derived from) | National Standards Bulletin 2014 No. 33 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This Standard specifies doped with boron, phosphorus-doped, monocrystalline silicon doped with arsenic conversion between resistivity and dopant concentration between Jing, the scaling relation applies to antimony-doped silicon single crystal, also expand | GB/T 13389-2014: Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
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Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
ICS 29.045
H80
National Standards of People's Republic of China
Replacing GB/T 13389-1992
Doped with boron doped phosphorus doped silicon crystal and resistivity
Dopant concentration conversion procedure
phosphorus-doped, andarsenic-dopedsilicon
Issued on. 2014-12-31
2015-09-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard replaces GB/T 13389-1992 "phosphorus-doped silicon single crystal doped with boron resistivity and dopant concentration in terms of procedures," referring to SEMI
MF723-0307 "doped with boron doped phosphorus doped silicon crystal resistivity and dopant concentration in terms of procedures" for the GB/T 13389-1992 revised.
This standard compared with GB/T 13389-1992, mainly in the following changes.
--- Increased by formula (5), (6), (7), the dopant concentration of arsenic in terms of resistivity, the resistivity of the boron-doped silicon single hole concentration and conversion
Phosphorus-doped silicon single crystal resistivity in terms of electron density formula and the corresponding scope of application;
--- Since all formulas are empirical or experimental results, so this standard test given in accordance with the formula for ease of use
To better understand and use these conversion procedures;
--- Increase confounding factors (see Chapter 6);
--- Added Appendix and references.
Please note that some of the content of this document may involve patents. Release mechanism of the present document does not assume responsibility for the identification of these patents.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards
Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Grinm Semiconductor Materials Co., Ltd., Sichuan Xinguang Silicon Technology Co., Ltd., China Metrology
Research Institute, Zhejiang silicon material quality inspection center, Hangzhou Haina Semiconductor Co., Ltd., Zhejiang Jinrui Hong Technology Co., Ltd., Xian Long
Silicon-based Materials Co., Ltd.
The main drafters of this standard. Sun Yan, Liang Hong, Gao Ying, Lou Chunlan, Zhang, Wang Feiyao, Cao Zi, He Liangen, Zhang Haiying, Zhang Qun community.
This standard replaces the standards previously issued as follows.
--- GB/T 13389-1992.
Doped with boron doped phosphorus doped silicon crystal and resistivity
Dopant concentration conversion procedure
1 Scope
This standard specifies the boron doped, phosphorous doped, monocrystalline silicon doped with arsenic conversion between resistivity and dopant concentration between the conversion also applies to the relationship
Antimony-doped silicon single crystal, can also be extended to other silicon dopant activation and boron, phosphorus, similar.
This standard applies to boron-doped concentration 1014cm-3 ~ 1 × 1020cm-3, the concentration of phosphorus doped 3 × 1013cm-3 ~ 1 × 1020cm-3, doped with arsenic concentration
Of 1019cm-3 ~ 6 × 1020cm-3. Dopant concentration of the silicon single crystal doped with boron, phosphorus-doped can be extended to 1012cm-3.
This standard can also be used at 23 ℃ resistivity silicon single crystal from the carrier concentration of the conversion, but does not include arsenic dopant carrier concentration
The degree of conversion, or in terms of any other carrier concentration.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 1550 extrinsic conductivity type semiconductor material testing methods
GB/T 1551 silicon single crystal resistivity measuring method
GB/T 4326 extrinsic semiconductor single crystals Hall mobility and Hall coefficient measurements
GB/T 14264 semiconductor material terms
3 Terms and Definitions
GB/T 14264 and defined by the following terms and definitions apply to this document.
3.1
Autocorrelation capacitive error theself-consistencyerrors
Resistivity and dopant concentration between the conversion formula or table, which is a variable, fitting the experimental data to derive further variant
Volume, when using different variables will produce two complementary formulas, such as formula (1) and (2), the equation (3) and (4). Since these public
Formula in mathematics is not completely equivalent, so the use of a formula derived therefrom or form will have a slight difference, the difference is called self
Compatibility errors.
4 Method summary
Resistivity and mutual conversion between dopant concentration is based on boron doped phosphorus-doped silicon single crystal of the combined experience between the two data obtained, and
Extending it to silicon in terms of having a similar activation energy of the other dopant, according to the same method also gives the resistivity and carrier concentration of
relationship. The standard terms of the relationship expressed as a formula in the form of curves and tables, please pay special attention to the application of different formulas applying Fan
Wai and the corresponding error.
Note 1. This standard is doped with boron, phosphorus-doped conversion Thurberetal1,2,3 initially based on data in the (3 × 1013cm-3 ~ 1 × 1020cm-3) of the phosphorus-doped silicon single
Obtained crystal and (1014cm-3 ~ 1 × 1020cm-3) of the boron-doped silicon single crystal. Phosphorus number of data samples based on the two block Esaki and Miyahara4
It is, Fair and phosphorus diffusion Tsai5 sample data is used to expand the data point to 1020cm-3 or more. In 1012cm-3 or less increased dotted line
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