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GB/T 26065-2010: Specification for polished test silicon wafers
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| GB/T 26065-2010 | English | 419 |
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Specification for polished test silicon wafers
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GB/T 26065-2010
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Basic data | Standard ID | GB/T 26065-2010 (GB/T26065-2010) | | Description (Translated English) | Specification for polished test silicon wafers | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 18,196 | | Date of Issue | 1/10/2011 | | Date of Implementation | 10/1/2011 | | Quoted Standard | GB/T 1550; GB/T 1554; GB/T 1555; GB/T 1557; GB/T 2828.1; GB/T 4058; GB/T 6616; GB/T 6618; GB/T 6619; GB/T 6620; GB/T 6621; GB/T 6624; GB/T 11073; GB/T 12964; GB/T 13387; GB/T 13388; GB/T 14140; GB/T 14264; YS/T 26; SEMI 24; ASTM F1526 | | Regulation (derived from) | Announcement of Newly Approved National Standards 2011 No. (No. 166 overall) 1 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This Standard specifies preparing a semiconductor device used as the technical requirements of the inspection and process control of a silicon single crystal test piece. This standard covers the sizes of crystal orientation and surface defects such as performance requirements. This Standard is applicable to all standards of 50. 8mm ~ 300mm diameter silicon polishing test piece technical requirements. For more demanding specifications polished silicon single crystal, such as: particle testing wafers, silicon lithography resolution testing and monitoring of films such as metal ions, see SEMI24 "polished silicon single crystal quality norms. " | GB/T 26065-2010: Specification for polished test silicon wafers---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Specification for polished test silicon wafers
ICS 29.045
H80
National Standards of People's Republic of China
Polished silicon single standardized test pieces
Issued on. 2011-01-10
2011-10-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
The standard equipment by the National Standardization Technical Committee and the Technical Committee material of the semiconductor material (SAC/TC203/SC2) centralized.
This standard was drafted. Ningbo, Li Li Electronics Co., Ltd., Hangzhou Haina Semiconductor Co., Ltd.
Drafters of this standard. Gong Fei, He Liangen, Xu Feng, Huang Xiaorong, Liupei Dong, Wang Feiyao.
Polished silicon single standardized test pieces
1 Scope
1.1 standard specifies the technical requirements for preparing a semiconductor device used for inspection and process control in the silicon single crystal of the test piece.
1.2 This standard covers the sizes of crystal orientation and surface defects characteristic requirements. This standard covers all 50.8mm ~ 300mm
Nominal diameter silicon test piece was polished technical requirements.
1.3 For more demanding specifications polished silicon single crystal, such as. particle testing wafers, test wafers resolution lithography and metal ions most
Tablets, see SEMI24 "monocrystalline silicon polished wafer quality specifications."
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 1550 extrinsic conductivity type semiconductor material testing methods
GB/T 1554 crystallographic perfection of silicon by preferential etch test methods
GB/T 1555 to the measurement method of a semiconductor single crystal
GB/T 1557 interstitial oxygen content in the silicon crystal infrared absorption measurement method
GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan
GB/T 4058 Test Method polished silicon oxide induced defects
GB/T 6616 resistivity of semiconductor silicon and silicon thin film sheet resistance test method of non-contact eddy current method
GB/T 6618 wafer thickness and total thickness variation of test methods
GB/T 6619 wafer curvature testing methods
GB/T 6620 wafer warpage non-contact test method
GB/T 6621 Test Method for wafer surface flatness
GB/T 6624 polished silicon surface quality by visual inspection
Methods of measurement GB/T 11073 radial resistivity variation on silicon
GB/T 12964 monocrystalline silicon polished wafer
GB/T 13387 and other electronic materials silicon wafer reference surface length measurement method
GB/T 13388 wafer reference surface crystallographic orientation of the X-ray test method
GB/T 14140 wafer diameter measuring method
GB/T 14264 semiconductor material terms
YS/T 26 wafer edge profile test methods
SEMI24 quality monocrystalline silicon polished wafer specification
ASTMF1526 surface of the metal content measurement
3 Terms and Definitions
Terms and definitions GB/T 14264 apply as defined in this document.
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