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GB/T 6621-2009: Testing methods for surface flatness of silicon slices
Status: Valid GB/T 6621: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 6621-2009 | English | 139 |
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3 days [Need to translate]
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Testing methods for surface flatness of silicon slices
| Valid |
GB/T 6621-2009
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| GB/T 6621-1995 | English | 439 |
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4 days [Need to translate]
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Test methods for surface flatness of silicon polished slices
| Obsolete |
GB/T 6621-1995
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| GB 6621-1986 | English | 239 |
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2 days [Need to translate]
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Standard method for measuring surface flatness of polished silicon wafers by noncontact technique
| Obsolete |
GB 6621-1986
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PDF similar to GB/T 6621-2009
Basic data | Standard ID | GB/T 6621-2009 (GB/T6621-2009) | | Description (Translated English) | Testing methods for surface flatness of silicon slices | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 6,654 | | Date of Issue | 2009-10-30 | | Date of Implementation | 2010-06-01 | | Older Standard (superseded by this standard) | GB/T 6621-1995 | | Regulation (derived from) | National Standard Approval Announcement 2009 No.12 (Total No.152) | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the method for measuring the flatness of polished silicon wafers with a capacitive displacement sensor. Cut slices, grinding pieces, corrosion film can refer to this method. This standard applies to measure the diameter of 76mm, 100mm, 125mm, 150mm, 200mm, resistivity not greater than 200�� �� cm thickness no greater than 1000��m profile topography of polished silicon surface flatness and intuitive description of the wafer surface. | GB/T 6621-2009: Testing methods for surface flatness of silicon slices---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Testing methods for surface flatness of silicon slices
ICS 29.045
H80
National Standards of People's Republic of China
Replacing GB/T 6621-1995
Wafer surface flatness testing methods
Posted 2009-10-30
2010-06-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard replaces GB/T 6621-1995 "polished silicon surface flatness testing methods."
This standard compared with GB/T 6621-1995, the main changes are as follows.
--- The name was changed to "the wafer surface flatness testing methods";
--- Removed there is less use of interferometry, retaining only the most commonly used method of capacitance;
--- Increase the "reference standard";
--- On the "Method summary," "Instrument", "measurement procedure", "computing" a comprehensive modification;
--- The experiment redefined precision;
--- Increase the range of the sample in the first chapter of this standard applies;
--- Description of the test sample required to "sample" chapter.
This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed.
This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material.
Drafting of this standard. Shanghai Material Co., Ltd. co-crystal silicon.
The main drafters of this standard. Xu Xinhua, Yan Shiquan, Wang Zhen.
This standard superseded standard previously issued as follows.
--- GB/T 6621-1986, GB/T 6621-1995.
Wafer surface flatness testing methods
1 Scope
This standard specifies the method for determination of silicon polished wafer flatness capacitive displacement sensors, cutting, grinding film, corrosion can also refer to this sheet
method.
This standard applies to measure the diameter of 76mm, 100mm, 125mm, 150mm, 200mm, resistivity of not more than 200Ω · cm
Si thickness of not more than 1000μm polished surface flatness of the profile topography and intuitive description of the wafer surface.
2 Methods Summary
2.1 silicon flat in a pair of coaxial opposed capacitive displacement sensor (referred to as the probe) between a high-frequency voltage is applied to the probe, and silicon
It formed a high frequency electric field between the probe, during which each forming a capacitor. During the current probe circuit measures the amount of change that can be measured electrically
Capacitance C. As shown in Figure 1. C by the formula (1) is given by.
D --- A, the distance between the probe B;
Rao --- A probe on the surface of the distance;
Chou --- B probe and the lower surface of the distance;
1 capacitive displacement sensor method schematic
C = K
· A
Rao + + Chou
C0 (1)
Where.
C --- between the upper and lower surface of the wafer probe and the measured total capacitance in farads (F);
K --- permittivity of free space in farad per meter F/m;
A --- probe surface area, in square meters (m2);
Rao --- A probe on the surface distance in meters (m);
Chou --- B probe and the lower surface of the distance in meters (m);
C0 --- mainly by the probe structure and parasitic capacitance in farads (F).
2.2 Since when measuring the distance D between the probe and the next two probes to the lower surface of the distance Chou has been fixed at the time of calibration, the instrument
The measured capacitance value C according to equation (1) is calculated, you can get Rao, thereby calculating the wafer surface flatness and other geometrical parameters.
2.3 Select the appropriate reference plane and the focal plane in order to calculate the required parameters.
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