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GB/T 14141-2009: Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
Status: Valid GB/T 14141: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 14141-2009 | English | 229 |
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Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
| Valid |
GB/T 14141-2009
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| GB/T 14141-1993 | English | 239 |
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Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
| Obsolete |
GB/T 14141-1993
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PDF similar to GB/T 14141-2009
Basic data | Standard ID | GB/T 14141-2009 (GB/T14141-2009) | | Description (Translated English) | Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 10,117 | | Date of Issue | 2009-10-30 | | Date of Implementation | 2010-06-01 | | Older Standard (superseded by this standard) | GB/T 14141-1993 | | Quoted Standard | GB/T 1552; GB/T 11073 | | Regulation (derived from) | National Standard Approval Announcement 2009 No.12 (Total No.152) | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the measuring probe with straight rows of four silicon epitaxial layer, diffusion layer and an ion implantation layer sheet resistance methods. | GB/T 14141-2009: Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
ICS 29.045
H80
National Standards of People's Republic of China
Replacing GB/T 14141-1993
Silicon epitaxial layer, the diffusion layer and the ion implantation layer
Measured sheet resistance of four - probe
Posted 2009-10-30
2010-06-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard replaces GB/T 14141-1993 "Determination of silicon epitaxial layer, the diffusion layer and the ion implantation layer sheet resistance of row four-probe
Needle. "
This standard compared with GB/T 14141-1993, the main changes are as follows.
--- Modify the minimum diameter measured sheet resistance (by the 10.0mm to 15.9mm), sheet resistance and resistance measurement range
Accuracy;
--- Increasing the normative references;
--- Increased with the introduction of specimen geometry correction factor related to the calculation sheet resistance;
--- Increased disturbances;
--- Remove trichlorethylene reagent;
--- Modify the sheet resistance range, increasing the "DC input impedance less than 109Ω";
--- Remove trichlorethylene rinsing;
--- Modify arbitration measuring probe spacing from 1mm to 1.59mm;
--- Increasing the correction factor and temperature correction coefficient table.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) proposed.
This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material.
This standard was drafted. Ningbo, Li Li Electronics Co., Ltd., Nanjing Guosheng Electronics Co., Ltd., the Ministry of Information Industry, the quality of special materials
Supervision and Inspection Center.
The main drafters of this standard. Li careful, Xu Feng, Liupei Dong, Chen Pan, Marin treasure, He Xiukun.
This standard replaces the standards previously issued as follows.
--- GB/T 14141-1993.
Silicon epitaxial layer, the diffusion layer and the ion implantation layer
Measured sheet resistance of four - probe
1 Scope
This standard specifies the vertical four-probe measurement silicon epitaxial layer, the diffusion layer and the ion implantation layer sheet resistance method.
This standard applies to measuring a diameter greater than 15.9mm by epitaxy, diffusion, ion implantation into the silicon thin or lower surface formed
The average sheet resistance of the layer. Silicon substrate and the measured conductivity type opposite thin. Suitable for measuring the thickness of not less than 0.2μm thin, square
Block resistance measurement range of 10Ω ~ 5000Ω. This method can also be applied to higher or lower resistance sheet resistance measurements, but its measurement accuracy
Accuracy has not been evaluated.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 1552 silicon germanium crystal measuring resistivity inline four-probe method
Methods of measurement GB/T 11073 radial resistivity variation on silicon
3 Method summary
Use inline four-probe measurement device, the DC current through the sample two external probes, measuring the potential difference between the two in the probe, and the introduction of
Correction factor related to the geometry of the specimen, the sheet resistance was calculated.
4 confounding factors
4.1 Probe material and its shape and surface of silicon contact is a point power source to meet the injection conditions will affect test accuracy.
4.2 voltmeter input impedance will introduce measurement errors.
4.3 silicon geometry, surface contamination, etc. affect the test results.
4.4 light, high-frequency vibration, strong electromagnetic fields and temperature and humidity testing environment may affect the test results.
5 Reagents
5.1 hydrofluoric acid, pure class distinctions.
5.2 water, 25 ℃ when the resistivity of greater than 2MΩ · cm.
5.3 methanol, 99.5%.
5.4 dry nitrogen.
6 Measuring Instruments
6.1 Probe System
6.1.1 probe having a conical carbide probe angle of 45 ° ~ 150 °, the tip radius respectively 35μm ~ 100μm, 100μm ~
Hemispherical radius of 250μm or 50μm ~ 125μm circular cross-section of the flat.
6.1.2 pressure probe and the sample is divided into less than 0.3N and 0.3N ~ 0.8N two kinds.
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