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GB/T 24575-2009: Test method for measuring surface sodium, aluminum, potassium, and iron on silicon and epi substrates by secondary ion mass spectrometry
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 24575-2009 | English | 229 |
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Test method for measuring surface sodium, aluminum, potassium, and iron on silicon and epi substrates by secondary ion mass spectrometry
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GB/T 24575-2009
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Basic data | Standard ID | GB/T 24575-2009 (GB/T24575-2009) | | Description (Translated English) | Test method for measuring surface sodium, aluminum, potassium, and iron on silicon and epi substrates by secondary ion mass spectrometry | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 10,193 | | Date of Issue | 2009-10-30 | | Date of Implementation | 2010-06-01 | | Quoted Standard | ASTM E673; ASTM E122 | | Adopted Standard | SEMI MF1617-0304, MOD | | Regulation (derived from) | National Standard Approval Announcement 2009 No.12 (Total No.152) | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the silicon and epitaxial wafer surface Na, K and secondary ion mass spectrometry method of Fe, Al. This standard applies to detect Na mirror polished monocrystalline silicon and epitaxial wafer surface by secondary ion mass spectrometry (SIMS), Al, K and Fe total of each metal. This standard test is the total amount of each metal, so the method has nothing to do with the chemical and electrical properties of each metal. This standard applies to all types of doped silicon and dopant concentration. This standard is particularly applicable to the surface of the test piece located on the surface of metal products tainted depth of about 5nm. This standard applies to the surface density range (10^9 ~ 10^(14)) atoms/cm^Na 2 's, Al, tested K and Fe. The detection limit of the method depends on the count rate limit value or a blank, because of different instruments and different. | GB/T 24575-2009: Test method for measuring surface sodium, aluminum, potassium, and iron on silicon and epi substrates by secondary ion mass spectrometry
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Test method for measuring surface sodium, aluminum, potassium, and iron on silicon and epi substrates by secondary ion mass spectrometry
ICS 29.045
H80
National Standards of People's Republic of China
Secondary ion mass spectrometry detection method
Posted 2009-10-30
2010-06-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
The revised standard "measurement on the surface of the silicon substrate and the epitaxial silicon, sodium, potassium and aluminum secondary ion mass spectrometry" With SEMIMF1617-0304.
The standard format for SEMIMF1617-0304 been adjusted accordingly. For ease of comparison, the data are listed in Appendix B of this standard
Reg and reg SEMIMF1617-0304 control list. And SEMI1617-0304 modify the terms of the identification in a single vertical line
The margin they involved the terms page.
This standard compared with SEMIMF1617-0304, the main technical differences are as follows.
--- Removed the "purpose", "keywords."
--- The precision of the actual test results obtained in the laboratory instead of single precision and bias part of the original standard, and the original standard
The precision and bias data as part of Appendix A.
Appendix A of this standard and Appendix B is an informative annex.
This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed.
This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material.
This standard was drafted. Ministry of Information Industry materials for Quality Supervision and Inspection Center, China Electronics Technology Group Corporation forty-sixth RESEARCH
The study.
The main drafters of this standard. He Youqin, Manong agriculture, ARCHIVES.
Secondary ion mass spectrometry detection method
1 Scope
1.1 standard specifies the method of secondary ion mass spectrometry and silicon wafer surface Na, Al, K, and Fe. This standard applies to quadratic
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