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GB/T 13388-2009: Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
Status: Valid GB/T 13388: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 13388-2009 | English | 259 |
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Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
| Valid |
GB/T 13388-2009
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| GB/T 13388-1992 | English | 239 |
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Method for measuring crystallographic orientation of flats on single crystal sillcon slices and wafers by X-ray techniques
| Obsolete |
GB/T 13388-1992
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PDF similar to GB/T 13388-2009
Basic data | Standard ID | GB/T 13388-2009 (GB/T13388-2009) | | Description (Translated English) | Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 11,176 | | Date of Issue | 2009-10-30 | | Date of Implementation | 2010-06-01 | | Older Standard (superseded by this standard) | GB/T 13388-1992 | | Adopted Standard | SEMI MF847-0705, MOD | | Regulation (derived from) | National Standard Approval Announcement 2009 No.12 (Total No.152) | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the method for measuring the angle ��. �� angle is perpendicular to the reference plane on the basis of circular silicon wafer surface crystal orientation between the reference plane and angle. This standard applies to the reference surface of the wafer length should comply with GB/T 12964 and GB/T 12965 of the requirements, and silicon angle deviation should be within -5 �� to +5 �� range. | GB/T 13388-2009: Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
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Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
ICS 29.045
H80
National Standards of People's Republic of China
Replacing GB/T 13388-1992
Wafer reference surface crystallographic orientation of the X-ray test method
Posted 2009-10-30
2010-06-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This revised standard adopts SEMIMF847-0705 "reference surface of silicon crystal to X-ray testing methods."
This standard compared with SEMIMF847-0705, with the following exceptions.
--- Part of the international standard SEMI standard referenced by direct reference to corresponding our standards;
--- The main form content according to GB/T 1.1 requirements choreography.
This standard replaces GB/T 13388-1992 "wafer reference surface crystallographic orientation of the X-ray test method."
This standard compared with GB/T 13388-1992, the main changes are as follows.
Method 2 --- --- adds Laue back reflection X-ray method;
--- Cancel specific provisions diameter and length of the reference surface of the wafer;
--- GB prior to its amendment states that "the process does not apply to silicon in a predetermined orientation with the reference surface and the silicon surface perpendicular to the plane
Between the projection and the wafer surface normal angle of not less than 3 ° measured wafer "; and SEMIMF847-0705, only for corner
Degree deviate from -5 ° to + 5 ° silicon;
--- Normative references increased;
--- Modify the precision used SEMIMF847-0705 through a silicon wafer 50 times (25 times per side) measurements obtained
This test instrument to a single aspect of the reproduction of a single operator Evaluation. 1-α α calculated value of distribution of 1.94 ';
--- Increasing the relevant safety provisions.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) proposed.
This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material.
This standard was drafted. Grinm Semiconductor Materials Co., Ltd.
The main drafters of this standard. Sun Yan, Lu Liyan, Du Juan, Difu Yi, Gao rust.
This standard replaces the standards previously issued as follows.
--- GB/T 13388-1992.
Wafer reference surface crystallographic orientation of the X-ray test method
Objective 1
1.1 silicon reference plane crystallographic orientation (crystal orientation) is an important acceptance of material parameters. In the semiconductor device process, the general use of ginseng
Test surface to calibrate the semiconductor device geometry array crystallographic planes of the crystal orientation and consistency.
1.2 silicon reference plane (located at the edge of the film) to the crystal surface is crystallographic orientation reference surface, the reference plane is usually defined as a related
Low-index planes, such as the (110) plane, in this case, the reference surface of the crystal to be used for its deviation angle low index planes to describe.
1.3 This standard consists of two measuring methods.
1.4 Two test methods can process development and quality assurance for. But in the process of interlaboratory precision (reproducibility limit)
Before determining if the parties have not successfully completed the correlation between the two methods, both supply and demand is not recommended to use this method.
2 range
2.1 standard specifies the method for measuring the angle α, α angle perpendicular to the reference plane of the crystal surface of silicon wafers circular reference to the reference plane
Kakuma.
2.2 standard applies to the reference wafer surface length should be consistent with GB/T 12964 and GB/T 12965 provisions, and the angle of silicon
Should deviate from -5 ° to + 5 ° range.
Crystal 2.3 by the standard assay to directly dependent on the accuracy of the reference surface of the reference bezel and bezel with matching accuracy with respect to the X-ray
Alignment accuracy.
2.4 Standard consists of the following two methods.
Test Method 1 --- X-ray diffraction edge
Test Method 2 --- Laue back reflection X-ray method
2.4.1 a non-destructive testing methods, in order to make the wafer with respect to the unique X-ray goniometer positioning, in addition to the use of special silicon
Jig outside, similar to the GB/T 1555 Test Method 1. Compared with the back reflection Laue method, the technique for measuring the reference surface of the crystal to get higher
Accuracy.
2.4.2 Method 2 is non-destructive to the reference surface with respect to the X-ray beam positioning, in addition to using "instant" film and special fixtures
In addition, with ASTME82 and DIN50433 test methods - Part 3 is similar. Although Method 2 is more simple and fast, but does not have fine method 1
Degree, equipment and fixtures because it uses less accurate and low cost. Method 2 provides a measure of the permanent film
recording.
NOTE. explanation Laue photograph can get information wafer alignment errors. However, this is beyond the scope of the test method. This interpretation is willing to users,
To see ASTME82 and DIN50433 test methods Part 3 or standard X-ray textbooks. Because you can use a different fixture methods
2 is also applicable to the determination of the orientation of the wafer surface.
2.5 Standard values \u200b\u200bare in metric units, the value of imperial units in parentheses for information purposes only.
NOTE. This standard does not address safety issues, if any, associated with the use of standards. Standard before use, to establish appropriate safety and security measures and determining regulation
Applications chapter system is the standard user's responsibility.
3 Limitations
3.1 Reference surface flatness can affect the alignment accuracy of the reference plane and the reference baffle. In the section reference plane is raised (less common situation
Conditions), the reference surface crystal orientation may not be unique. More commonly, the reference surface along a plane perpendicular to the wafer surface with two straight reference the baffle
Intersect at two points. In this case, the crystal orientation is measured perpendicular to the wafer surface by two plane crystal orientation. In the latter case, when the
Between the reference plane and the reference bezel aligned to the measured crystal silicon is obtained in a subsequent process of crystal orientation.
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