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GB/T 26066-2010: Practice for shallow etch pit detection on silicon
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| Std ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status |
| GB/T 26066-2010 | English | 169 |
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Practice for shallow etch pit detection on silicon
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Basic data
| Standard ID | GB/T 26066-2010 (GB/T26066-2010) |
| Description (Translated English) | Practice for shallow etch pit detection on silicon |
| Sector / Industry | National Standard (Recommended) |
| Classification of Chinese Standard | H80 |
| Classification of International Standard | 29.045 |
| Word Count Estimation | 7,758 |
| Date of Issue | 1/10/2011 |
| Date of Implementation | 10/1/2011 |
| Quoted Standard | GB/T 14264 |
| Regulation (derived from) | Announcement of Newly Approved National Standards 2011 No. (No. 166 overall) 1 |
| Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China |
| Summary | This Standard specifies the technical inspection preferential corrosion test methods or polished wafer surface due to contamination caused by shallow etch pits by thermal oxidation and chemical. This Standard is applicable to detecting (111) or (100) crystallographic orientation of the P-type or n-type polished wafer or the epitaxial wafer, resistivity greater than 0. 001�� �� cm. |
GB/T 26066-2010: Practice for shallow etch pit detection on silicon
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Practice for shallow etch pit detection on silicon
ICS 29.045
H80
National Standards of People's Republic of China
Test method on a silicon wafer shallow pit corrosion detection
Issued on. 2011-01-10
2011-10-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
The standard equipment by the National Standardization Technical Committee and the Technical Committee material of the semiconductor material (SAC/TC203/SC2) centralized.
This standard was drafted. Luoyang monocrystalline silicon limited liability company.
The main drafters of this standard. Tiansu Xia, Zhang Jingwen Wang Wen-Wei, Zhou Tao.
Test method on a silicon wafer shallow pit corrosion detection
1 Scope
This standard specifies thermal oxidation and chemical preferential etching techniques or polished wafer inspection surface due to contamination caused by shallow pit corrosion inspection
Measuring method.
This standard is applicable to the detection of < 111> or < 100> p-type or n-type polished or epitaxial wafers, resistivity greater than 0.001Ω · cm.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 14264 semiconductor material terms
3 Terms and Definitions
Terms and definitions GB/T 14264 apply to this document defined.
4 Method summary
Some defects polished or epitaxial wafers after thermal oxidation and preferential etching by microscopic observation after showing shallow corrosion pits, and a chart
Identifying and documenting the extent of corrosion pits.
5. Significance and Use
5.1 High-density corrosion pits ( > 104/cm2) showed that metal contamination on a silicon wafer, semiconductor device fabrication process is harmful.
Objective 5.2 test method is used for incoming inspection and process control.
6 disturbances
6.1 corrosion and corrosion before the bubble generated in the process of cleaning the surface of undue influence observations.
6.2 insufficient amount of etching solution will affect the observed effect.
6.3 preferential etching process to prevent serious contamination of silicon p-type silicon (< 0.2Ω · cm) to form a shallow corrosion pits or blur it.
6.4 oxidizing environment contamination will seriously increase the density of shallow corrosion pits.
7 Equipment
7.1 high-intensity narrow beam of light. illumination more than 16klx (1500fc) tungsten filament from the light source position of the beam diameter 20mm ~ 100mm
40mm.
7.2 hydrofluoric acid protective equipment. fluorine plastic, polyethylene or polypropylene beaker, graduated cylinder, tweezers, goggles, aprons, gloves and protective sleeves.
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