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GB/T 26066-2010 English PDF

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GB/T 26066-2010: Practice for shallow etch pit detection on silicon
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PDF similar to GB/T 26066-2010


Standard similar to GB/T 26066-2010

GB/T 16595   GB/T 29055   GB/T 16596   GB/T 14264   GB/T 29057   GB/T 26065   

Basic data

Standard ID GB/T 26066-2010 (GB/T26066-2010)
Description (Translated English) Practice for shallow etch pit detection on silicon
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H80
Classification of International Standard 29.045
Word Count Estimation 7,741
Date of Issue 1/10/2011
Date of Implementation 10/1/2011
Quoted Standard GB/T 14264
Regulation (derived from) Announcement of Newly Approved National Standards 2011 No. (No. 166 overall) 1
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This Standard specifies the technical inspection preferential corrosion test methods or polished wafer surface due to contamination caused by shallow etch pits by thermal oxidation and chemical. This Standard is applicable to detecting (111) or (100) crystallographic orientation of the P-type or n-type polished wafer or the epitaxial wafer, resistivity greater than 0. 001�� �� cm.

GB/T 26066-2010: Practice for shallow etch pit detection on silicon

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Practice for shallow etch pit detection on silicon ICS 29.045 H80 National Standards of People's Republic of China Test method on a silicon wafer shallow pit corrosion detection Issued on. 2011-01-10 2011-10-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

The standard equipment by the National Standardization Technical Committee and the Technical Committee material of the semiconductor material (SAC/TC203/SC2) centralized. This standard was drafted. Luoyang monocrystalline silicon limited liability company. The main drafters of this standard. Tiansu Xia, Zhang Jingwen Wang Wen-Wei, Zhou Tao. Test method on a silicon wafer shallow pit corrosion detection

1 Scope

This standard specifies thermal oxidation and chemical preferential etching techniques or polished wafer inspection surface due to contamination caused by shallow pit corrosion inspection Measuring method. This standard is applicable to the detection of < 111> or < 100> p-type or n-type polished or epitaxial wafers, resistivity greater than 0.001Ω · cm.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 14264 semiconductor material terms

3 Terms and Definitions

Terms and definitions GB/T 14264 apply to this document defined.

4 Method summary

Some defects polished or epitaxial wafers after thermal oxidation and preferential etching by microscopic observation after showing shallow corrosion pits, and a chart Identifying and documenting the extent of corrosion pits. 5. Significance and Use 5.1 High-density corrosion pits ( > 104/cm2) showed that metal contamination on a silicon wafer, semiconductor device fabrication process is harmful. Objective 5.2 test method is used for incoming inspection and process control.

6 disturbances

6.1 corrosion and corrosion before the bubble generated in the process of cleaning the surface of undue influence observations. 6.2 insufficient amount of etching solution will affect the observed effect. 6.3 preferential etching process to prevent serious contamination of silicon p-type silicon (< 0.2Ω · cm) to form a shallow corrosion pits or blur it. 6.4 oxidizing environment contamination will seriously increase the density of shallow corrosion pits.

7 Equipment

7.1 high-intensity narrow beam of light. illumination more than 16klx (1500fc) tungsten filament from the light source position of the beam diameter 20mm ~ 100mm 40mm. 7.2 hydrofluoric acid protective equipment. fluorine plastic, polyethylene or polypropylene beaker, graduated cylinder, tweezers, goggles, aprons, gloves and protective sleeves.

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