|
Std ID |
Description (Standard Title) |
Detail |
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GB/T 20228-2021
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Gallium arsenide single crystal
|
GB/T 20228-2021
|
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GB/T 11094-2020
|
Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method
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GB/T 11094-2020
|
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GB/T 36706-2018
|
Polycrystalline indium phosphide
|
GB/T 36706-2018
|
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GB/T 37053-2018
|
General specification for epitaxial wafers and substrates based on gallium nitride
|
GB/T 37053-2018
|
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GB/T 35308-2017
|
Epitaxial wafers of germanium based Ⅲ-Ⅴ compounds for solar cell
|
GB/T 35308-2017
|
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GB/T 35305-2017
|
Monocrystalline gallium arsenide polished wafers for solar cell
|
GB/T 35305-2017
|
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GB/T 30652-2014
|
Trichlorosilane for silicon epitaxial
|
GB/T 30652-2014
|
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GB/T 30656-2014
|
Polished monocrystalline silicon carbide wafers
|
GB/T 30656-2014
|
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GB/T 30854-2014
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Gallium nitride based epitaxial layer for LED lighting
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GB/T 30854-2014
|
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GB/T 30855-2014
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GaP substrates for LED epitaxial chips
|
GB/T 30855-2014
|
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GB/T 30856-2014
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GaAs substrates for LED epitaxial chips
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GB/T 30856-2014
|
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GB/T 30858-2014
|
Polished mono-crystalline sapphire substrate product
|
GB/T 30858-2014
|
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GB/T 30866-2014
|
Test method for measuring diameter of monocrystalline silicon carbide wafers
|
GB/T 30866-2014
|
|
GB/T 30867-2014
|
Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
|
GB/T 30867-2014
|
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GB/T 30868-2014
|
Test method for measuring micropipe density of monocrystalline silicon carbide wafer -- Chemically etching
|
GB/T 30868-2014
|
|
GB/T 31092-2014
|
Monocrystalline sapphire ingot
|
GB/T 31092-2014
|
|
GB/T 11072-2009
|
Indium antimonide polycrystal, single crystals and as-cut slices
|
GB/T 11072-2009
|
|
GB/T 11093-2007
|
Liquid encapsulated Czochralski-grown gallium arsenide single crystals and as-cut slices
|
GB/T 11093-2007
|
|
GB/T 11094-2007
|
Horizontal Bridgman grown gallium arsenide single crystal and cutting wafer
|
GB/T 11094-2007
|
|
GB/T 20228-2006
|
Gallium arsenide single crystal
|
GB/T 20228-2006
|
|
GB/T 20229-2006
|
Gallium phosphide single crystal
|
GB/T 20229-2006
|
|
GB/T 20230-2006
|
Indium phosphide single crystal
|
GB/T 20230-2006
|
|
GB/T 17170-1997
|
Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
|
GB/T 17170-1997
|
|
GB/T 17169-1997
|
Test method for the surface quality of polished silicon wafers and epitaxial wafers by optical-reflection
|
GB/T 17169-1997
|
|
GB/T 15615-1995
|
Test method for measuring flexture strength of silicon slices
|
GB/T 15615-1995
|
|
GB/T 25074-2025
|
Solar-grade polycrystalline silicon
|
GB/T 25074-2025
|
|
GB/T 44334-2024
|
Silicon epitaxial wafers with buried layers
|
GB/T 44334-2024
|
|
GB/T 35307-2023
|
Granular polysilicon produced by fluidized bed method
|
GB/T 35307-2023
|
|
GB/T 26069-2022
|
Annealed monocrystalline silicon wafers
|
GB/T 26069-2022
|
|
GB/T 41325-2022
|
Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit
|
GB/T 41325-2022
|
|
GB/T 41652-2022
|
Silicon electrode and silicon ring for plasma etching machine
|
GB/T 41652-2022
|
|
GB/T 12963-2022
|
Electronic-grade polycrystalline silicon
|
GB/T 12963-2022
|
|
GB/T 40561-2021
|
Photovoltaic silicon material - Determination of oxygen - Pulse heating inert gas fusion infrared absorption method
|
GB/T 40561-2021
|
|
GB/T 40566-2021
|
Granular polysilicon produced by fluidized bed method - Determination of hydrogen - Pulse heating inert gas fusion infrared absorption method
|
GB/T 40566-2021
|
|
GB/T 14139-2019
|
Silicon epitaxial wafers
|
GB/T 14139-2019
|
|
GB/T 29054-2019
|
Casting multi-crystalline silicon brick for photovoltaic solar cell
|
GB/T 29054-2019
|
|
GB/T 29055-2019
|
Multicrystalline Silicon Wafers for Photovoltaic Solar Cell
|
GB/T 29055-2019
|
|
GB/T 5238-2019
|
Monocrystalline germanium and monocrystalline germanium slices
|
GB/T 5238-2019
|
|
GB/T 12964-2018
|
Monocrystalline silicon polished wafers
|
GB/T 12964-2018
|
|
GB/T 12965-2018
|
Monocrystalline silicon as cut wafers and lapped wafers
|
GB/T 12965-2018
|
|
GB/T 25076-2018
|
Monocrystalline silicon for solar cell
|
GB/T 25076-2018
|
|
GB/T 26071-2018
|
Monocrystalline silicon wafers for solar cells
|
GB/T 26071-2018
|
|
GB/T 25074-2017
|
Solar-grade polycrystalline silicon
|
GB/T 25074-2017
|
|
GB/T 35307-2017
|
Granular polysilicon produced by fluidized bed method
|
GB/T 35307-2017
|
|
GB/T 35310-2017
|
200 mm silicon epitaxial wafer
|
GB/T 35310-2017
|
|
GB/T 32573-2016
|
Silicon powder -- Determination of total carbon content -- Infrared absorption method after combustion in an induction furnace
|
GB/T 32573-2016
|
|
GB/T 32651-2016
|
Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
|
GB/T 32651-2016
|
|
GB/T 12962-2015
|
Monocrystalline silicon
|
GB/T 12962-2015
|
|
GB/T 31854-2015
|
Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
|
GB/T 31854-2015
|
|
GB/T 12963-2014
|
Electronic-grade polycrystalline silicon
|
GB/T 12963-2014
|
|
GB/T 30861-2014
|
Germanium substrate for solar cell
|
GB/T 30861-2014
|
|
GB/T 29504-2013
|
300 mm monocrystalline silicon
|
GB/T 29504-2013
|
|
GB/T 29506-2013
|
300 mm polished monocrystalline silicon wafers
|
GB/T 29506-2013
|
|
GB/T 29508-2013
|
300mm monocrystalline silicon as cut slices and grinded slices
|
GB/T 29508-2013
|
|
GB/T 29849-2013
|
Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
|
GB/T 29849-2013
|
|
GB/T 29850-2013
|
Test method for measuring compensation degree of silicon materials used for photovoltaic applications
|
GB/T 29850-2013
|
|
GB/T 29851-2013
|
Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
|
GB/T 29851-2013
|
|
GB/T 29852-2013
|
Test method for measuring phosphorus, arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
|
GB/T 29852-2013
|
|
GB/T 29054-2012
|
Solar-grade casting multi-crystalline silicon brick
|
GB/T 29054-2012
|
|
GB/T 29055-2012
|
Multi-crystalline silicon wafer for solar cell
|
GB/T 29055-2012
|
|
GB/T 25074-2010
|
Solar-grade polycrystalline silicon
|
GB/T 25074-2010
|
|
GB/T 26072-2010
|
Germanium single crystal for solar cell
|
GB/T 26072-2010
|
|
GB/T 12963-2009
|
Specification for polycrystalline silicon
|
GB/T 12963-2009
|
|
GB/T 14140-2009
|
Test method for measuring diameter of semiconductor wafer
|
GB/T 14140-2009
|
|
GB/T 6620-2009
|
Test method for measuring warp on silicon slices by noncontact scanning
|
GB/T 6620-2009
|
|
GB/T 11069-2006
|
High purity germanium dioxide
|
GB/T 11069-2006
|
|
GB/T 11070-2006
|
Reduced germanium ingot
|
GB/T 11070-2006
|
|
GB/T 11071-2006
|
Zone-refined germanium ingot
|
GB/T 11071-2006
|
|
GB/T 12962-2005
|
Monocrystalline silicon
|
GB/T 12962-2005
|
|
GB/T 12965-2005
|
Monocrystalline silicon as cut slices and lapped slices
|
GB/T 12965-2005
|
|
GB/T 12964-2003
|
Monocrystalline silicon polished wafers
|
GB/T 12964-2003
|
|
GB/T 19199-2003
|
Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
|
GB/T 19199-2003
|
|
GB/T 16822-1997
|
Test method for dielectric properties of dielectric crystal
|
GB/T 16822-1997
|
|
GB/T 12962-1996
|
Monocrystalline silicon
|
GB/T 12962-1996
|
|
GB/T 12963-1996
|
Polycrystalline silicon
|
GB/T 12963-1996
|
|
GB/T 12964-1996
|
Monocrystalline silicon polished wafers
|
GB/T 12964-1996
|
|
GB/T 12965-1996
|
Monocrystalline silicon as cut slices and lapped slices
|
GB/T 12965-1996
|
|
GB/T 15250-1994
|
Test method for bulk acoustic wave attenuation of piezoelectric lithium niobate crystals
|
GB/T 15250-1994
|
|
GB/T 2881-1991
|
Technical requirements for silicon metal
|
GB/T 2881-1991
|
|
GB/T 8646-1998
|
Fine aluminum-1% silicon wire for semiconductor lend-bonding
|
GB/T 8646-1998
|
|
GB/T 8646-1988
|
Aluminium-silicon (AISi 1) wire for semiconductor lead bonding
|
GB/T 8646-1988
|
|
GB/T 39149-2020
|
Recycled tellurium material
|
GB/T 39149-2020
|
|
GB/T 39150-2020
|
Recycled selenium material
|
GB/T 39150-2020
|
|
GB/T 2881-2014
|
Silicon metal
|
GB/T 2881-2014
|
|
GB/T 2881-2008
|
Silicon metal
|
GB/T 2881-2008
|
|
GB/T 15713-1995
|
Monocrystalline germanium slices
|
GB/T 15713-1995
|
|
GB/T 5238-1995
|
Monocrystalline germanium
|
GB/T 5238-1995
|
|
GB/T 14140.1-1993
|
Silicon slices and wafers--Measuring of diameter--Optical projecting method
|
GB/T 14140.1-1993
|
|
GB/T 14145-1993
|
Test method for stacking fault density of epitaxial layers of silicon by interference contrast microscopy
|
GB/T 14145-1993
|
|
GB/T 11070-1989
|
Reduced germanium ingot
|
GB/T 11070-1989
|
|
GB/T 11071-1989
|
Zone-refined germanium ingot
|
GB/T 11071-1989
|
|
GB/T 11072-1989
|
Indium antimonide polycrystal, single crystals and as-cut slices
|
GB/T 11072-1989
|
|
GB/T 11093-1989
|
Liquid encapaulated czochralski-grouwn gallium arsenide single crystals and As-cut slices
|
GB/T 11093-1989
|
|
GB/T 11094-1989
|
Boat-grown gallium arsenide single crystals and As-cut slices
|
GB/T 11094-1989
|
|
GB/T 14264-2024
|
Terminology of semiconductor materials
|
GB/T 14264-2024
|
|
GB/T 29057-2023
|
Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
|
GB/T 29057-2023
|
|
GB/T 43612-2023
|
Collection of metallographs on defects in silicon carbide crystal materials
|
GB/T 43612-2023
|
|
GB/T 16595-2019
|
Specification for a Universal Wafer Grid
|
GB/T 16595-2019
|
|
GB/T 16596-2019
|
Specification for establishing a wafer coordinate system
|
GB/T 16596-2019
|
|
GB/T 14844-2018
|
Designations of semiconductor materials
|
GB/T 14844-2018
|