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GB/T 30867-2014: Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
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GB/T 30867-2014: Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers

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Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers ICS 29.045 H83 National Standards of People's Republic of China SiC single wafer thickness and total thickness Changes in test methods Issued on. 2014-07-24 2015-02-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and materials Technical Committee (SAC/TC 203/SC2) jointly proposed and managed. This standard was drafted. China Electronics Technology Group Corporation forty-sixth Research Institute, China Electronics Standardization Institute. The main drafters of this standard. ARCHIVES INNER Hao Jian Min, Lin Xian, Hexiu Kun, Liu Yun, Pingya Bin, Peihui Chuan. SiC single wafer thickness and total thickness Changes in test methods

1 Scope

This standard specifies the silicon carbide single wafer thickness and total thickness variation (TTV) of test methods, including contact and non-contact two the way. This standard applies to a diameter of not less than 30mm, a thickness of 0.13mm ~ 1mm SiC single wafer.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 14264 semiconductor material terms GB/T 25915.1-2010 cleanroom and associated controlled environments - Part 1. air cleanliness level

3 Terms and Definitions

Terms and definitions GB/T 14264 apply to this document defined.

4 Method summary

4.1 contact measurement Contact measurement using a five-point method. 4 symmetrically on the circumference and the center of the silicon carbide single crystal silicon carbide from a single wafer edge D/10's SiC single position measuring wafer thickness, as shown in FIG. Single center of the wafer thickness nominal thickness, maximum 5 thickness measurements in And minimum value of the difference between the total thickness variation of silicon carbide single wafer. Description. Figure D is the diameter of the wafer of silicon carbide single. Measurement point position 1 contact measurement ...