GB/T 35310-2017 English PDFUS$199.00 ยท In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 35310-2017: 200 mm silicon epitaxial wafer Status: Valid
Basic dataStandard ID: GB/T 35310-2017 (GB/T35310-2017)Description (Translated English): 200 mm silicon epitaxial wafer Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H82 Classification of International Standard: 29.045 Word Count Estimation: 10,161 Date of Issue: 2017-12-29 Date of Implementation: 2018-07-01 Regulation (derived from): National Standards Bulletin 2017 No. 32 Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China GB/T 35310-2017: 200 mm silicon epitaxial wafer---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.200 mm silicon epitaxial wafer ICS 29.045 H82 National Standards of People's Republic of China 200mm silicon epitaxial wafer 2017-12-29 Posted 2018-07-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released ForewordThis standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards Technical Committee Sub-Technical Committee on Materials (SAC/TC203/SC2) co-sponsored and centralized. This standard was drafted unit. Nanjing Guosheng Electronics Co., Ltd., non-ferrous metal technology and Economy Institute. The main drafters of this standard. Marin Bao, Luo Hong, Yang Fan, Golden Dragon, Yang Su heart. 200mm silicon epitaxial wafer1 ScopeThis standard specifies the terms and definitions of.200mm diameter silicon epitaxial wafers, product classification, requirements, test methods, inspection rules and standard Chi, packaging, transportation, storage, quality certificate. This standard applies to the N-type and P-type silicon substrate polishing epitaxial silicon epitaxial wafers. Products are mainly used in the production of integrated circuits Or semiconductor device.2 Normative referencesThe following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 1550 extrinsic semiconductor conductive material test methods GB/T 1555 semiconductor crystal orientation measurement method GB/T 2828.1 Sampling procedures for sampling inspection - Part 1. Batch inspection sampling plan retrieved by acceptance quality limit (AQL) GB/T 6617 Determination of resistivity of silicon extended resistance probe method GB/T 6618 Wafer thickness and total thickness change test method GB/T 6619 silicon bending test method GB/T 6620 silicon warpage non-contact test method GB/T 6621 silicon surface roughness test method Visual inspection of GB/T 6624 surface quality of silicon polishing GB/T 12964 silicon single crystal polishing pad GB/T 14141 Si Epilayer, Diffusion Layer and Ion Implantation Layer Sheet Resistance Straight Row Four-Probe Method GB/T 14142 silicon epitaxial layer crystal integrity testing method corrosion method Silicon epitaxial layer carrier concentration measurement mercury probe capacitance - voltage method GB/T 14264 semiconductor materials terminology GB/T 14847 heavily doped substrate with lightly doped silicon epitaxial layer thickness of the infrared reflection measurement method GB/T 19921 silicon polishing surface particle test methods GB/T 24578 metal surface contamination of the silicon total reflection X - ray fluorescence spectrometry test method GB/T 29507 Wafer flatness, thickness and total thickness change test Automatic non-contact scanning GB/T 32280 silicon warpage test automatic non-contact scanning method YS/T 28 silicon package3 Terms and definitionsGB/T 14264 defined terms and definitions apply to this document.4 product categories4.1 Products according to the conductivity type is divided into N-type and P-type. The n-type epitaxial layer is doped with phosphorus or arsenic, and the p-type epitaxial layer is doped with boron. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 35310-2017_English be delivered?Answer: Upon your order, we will start to translate GB/T 35310-2017_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 35310-2017_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 35310-2017_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.Question 3: Does the price include tax/VAT?Answer: Yes. 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