GB/T 41652-2022 English PDF

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GB/T 41652-2022: Silicon electrode and silicon ring for plasma etching machine
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 41652-2022	179	Add to Cart	3 days	Silicon electrode and silicon ring for plasma etching machine	Valid

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Basic data

Standard ID: GB/T 41652-2022 (GB/T41652-2022)
Description (Translated English): Silicon electrode and silicon ring for plasma etching machine
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H82
Word Count Estimation: 8,827
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 41652-2022: Silicon electrode and silicon ring for plasma etching machine

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Silicon electrode and silicon ring for plasma etching machine ICS 29.045 CCSH82 National Standards of People's Republic of China Silicon electrode and silicon ring for etching machine Published on 2022-07-11 2023-02-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration

foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents" drafted. Please note that some content of this document may be patented. The issuing agency of this document assumes no responsibility for identifying patents. This document is jointly developed by the National Standardization Technical Committee for Semiconductor Equipment and Materials (SAC/TC203) and the National Standard for Semiconductor Equipment and Materials The material sub-technical committee (SAC/TC203/SC2) of the Chemical Technology Committee jointly proposed and managed it. This document is drafted by. Youyan Semiconductor Silicon Materials Co., Ltd., Shandong Youyan Semiconductor Materials Co., Ltd., New Micron (Suzhou) Semiconductor Body Technology Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd. The main drafters of this document. Ku Liming, Sun Yan, Yan Zhirui, Zhang Guohu, Xia Qiuliang, Pan Jinping. Silicon electrode and silicon ring for etching machine

1 Scope

This document specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage and shipment of silicon electrodes and silicon rings for etching machines. line file and the contents of the order form. This document is applicable to silicon electrodes and silicon rings with a diameter of.200mm~450mm for etching machines processed by p< 100> Czochralski silicon single crystal.

2 Normative references

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to this document. GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials GB/T 1551 Determination of the resistivity of silicon single crystal - four-point probe method and two-point direct current method GB/T 1554 Silicon Crystal Integrity Chemical Preferential Corrosion Inspection Method GB/T 1555 Method for Determination of Crystal Orientation of Semiconductor Single Crystal GB/T 1557 Infrared absorption measurement method of interstitial oxygen content in silicon crystals GB/T 1558 Infrared Absorption Measurement Method of Substituted Carbon Atom Content in Silicon GB/T 6624 Visual inspection method for the surface quality of silicon polished wafers GB/T 11073 Measurement method of radial resistivity change of silicon wafer GB/T 14264 Terms of Semiconductor Materials GB/T 29505 Surface roughness measurement method of flat surface of silicon wafer

3 Terms and Definitions

The terms and definitions defined in GB/T 14264 and the following apply to this document. 3.1 flatness The difference between the maximum value and the minimum value of the silicon electrode or silicon ring thickness.

4 Technical requirements

4.1 Electrical parameters The electrical parameters of the silicon electrode and silicon ring should meet the requirements in Table 1. ......

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