GB/T 29851-2013 English PDF

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GB/T 29851-2013: Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 29851-2013	169	Add to Cart	3 days	Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry	Valid

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Basic data

Standard ID: GB/T 29851-2013 (GB/T29851-2013)
Description (Translated English): Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H82
Classification of International Standard: 29.045
Word Count Estimation: 7,732
Regulation (derived from): National Standards Bulletin No. 22 of 2013
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies: Determination of silicon photovoltaic cell material with boron and aluminum content by secondary ion mass spectrometry (SIMS) method. This standard applies to: photovoltaic silicon material impurity boron and aluminum content by u

GB/T 29851-2013: Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry ICS 29.045 H82 National Standards of People's Republic of China Solar cell silicon material B, Al acceptor impurity Secondary ion mass spectrometry method for content Issued on. 2013-11-12 2014-04-15 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. Please note that some of the content of this document may involve patents. Release mechanism of the present document does not assume responsibility for the identification of these patents. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and focal points. This standard was drafted. the information industry materials for Quality Supervision and Inspection Center, China Electronics Standardization Institute, National Electronic Power With auxiliary materials for Quality Supervision and Inspection Center, Tianjin Central European Semiconductor Materials Technology Co., Ltd. The main drafters of this standard. He Youqin, Manong agriculture, Wang Xue, He Xiukun, Peikuai Chuan, Fengya Bin, Zhang Xue-nan. Solar cell silicon material B, Al acceptor impurity Secondary ion mass spectrometry method for content

1 Scope

This standard specifies the method for the determination of photovoltaic cells with secondary ion mass spectrometry (SIMS) with boron silicon and aluminum content. This standard applies to solar cell silicon material quantitative impurity boron and aluminum content by analysis, in which boron and aluminum concentrations were greater than 1 × 1013atoms/cm3. Other measuring acceptor impurity may also refer to this standard.

2 principle of the method

Under high vacuum, the oxygen ions produced by a primary ion source, the accelerated, purified and focused, bombarding the sample surface, a variety of sputtered particle Son, in which ions (ie, secondary ion) leads, by a different charge to mass ratio mass spectrometer to separate ions, record and calculate the sample of boron, aluminum sub And other secondary ion intensity ratio of silicon (B)/(Si), (Al)/(Si), and the use of the relative sensitivity factors quantified.

3 disturbances

3.1 sample surface adsorption of boron and aluminum can interfere with the measurement sample of boron and aluminum. 3.2 from SIMS instrument sample chamber adsorbed onto the sample surface boron and aluminum can interfere with the measurement sample of boron and aluminum. 3.3 in the sample holder window range of the sample surface should be flat, in order to ensure that each sample is moved to the analysis position, its surface with an ion collector The inclination of the optical system unchanged, otherwise the measurement accuracy and precision will be reduced. 3.4 Measuring accuracy and precision with the sample surface roughness increases significantly reduced, the surface of the sample by chemical mechanical polishing Light be eliminated. 3.5 Standard samples of boron and aluminum uneven distribution will affect the measurement accuracy. 3.6 Standard deviation boron and aluminum sample nominal concentrations may cause measurement deviations. 3.7 due to different instruments or different instruments in the same state, the detection limit may be different. 3.8 Because the secondary ion mass spectrometry is a destructive test, it should be sampled and the samples taken shall be representative of the nature of the batch of silicon materials. This standard does not establish uniform methods of sampling, as most appropriate sampling plan based on different samples circumstances are different. In order to achieve secondary Conference purpose, the sampling plan should be tested before the test to get the two sides recognized.

4 instruments and equipment

4.1 magnetic sector SIMS Instruments and equipment required oxygen primary ion source, the electron multiplier can detect positive secondary ions and Faraday cup detector, excellent mass resolution should In 1500. 4.2 cryogenic liquid nitrogen or liquid helium cooling plates If the vacuum analysis chamber is greater than 1.3 × 10-6Pa, application of liquid nitrogen or liquid helium cryogenic cooling plate surround analysis chamber sample holder. If the vacuum analysis chamber is less than 1.3 × 10-6Pa, the cooling is not required. ......

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