GB/T 6620-2009 English PDFUS$229.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 6620-2009: Test method for measuring warp on silicon slices by noncontact scanning Status: Valid GB/T 6620: Historical versions
Basic dataStandard ID: GB/T 6620-2009 (GB/T6620-2009)Description (Translated English): Test method for measuring warp on silicon slices by noncontact scanning Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H82 Classification of International Standard: 29.045 Word Count Estimation: 10,110 Date of Issue: 2009-10-30 Date of Implementation: 2010-06-01 Older Standard (superseded by this standard): GB/T 6620-1995 Quoted Standard: GB/T 2828.1; GB/T 6618; GB/T 14264 Adopted Standard: SEMI MF657-0705, MOD Regulation (derived from): National Standard Approval Announcement 2009 No.12 (Total No.152) Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China Summary: This standard specifies the monocrystalline silicon cutting discs, grinding pieces, polished (hereinafter referred to as silicon) warpage non-contact testing methods. This standard for measuring a diameter greater than 50 mm, a thickness greater than 180 ��m circular wafers. This standard is also applicable to other semiconductor measuring warpage picture card. The purpose of this test method is used for incoming inspection or process control. This test method is also suitable for hot chemistry monitoring device wafers during processing of warpage. GB/T 6620-2009: Test method for measuring warp on silicon slices by noncontact scanning---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.Test method for measuring warp on silicon slices by noncontact scanning ICS 29.045 H82 National Standards of People's Republic of China Replacing GB/T 6620-1995 Wafer warpage non-contact test method Posted 2009-10-30 2010-06-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released ForewordThis revised standard adopts SEMIMF657-0705 "changes in non-contact test wafer warpage and the total thickness of the method." This standard compared with SEMIMF657-0705, the main changes are as follows. --- This standard does not change the use of SEMI standard part of the total thickness of the test; --- This test wafer thickness range is narrower than the SEMI standards; --- The standard format prepared according to GB/T 1.1 regulations. This standard replaces GB/T 6620-1995 "wafer warpage non-contact testing methods." This standard compared with GB/T 6620-1995, the main changes are as follows. --- Modify the test wafer thickness range; --- Increasing the reference documents, terminology, meaning and purpose, interference factors and environmental conditions measurement section; --- Revised instrument calibration part; --- Increasing the arbitration measure; --- Remove the calculation of the total thickness variations; --- Increasing the calculation of the arbitration warp mean and standard deviation. This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed. This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material. This standard was drafted. Luoyang Monocrystalline Silicon Co., universal silicon peak Electronics Co., Ltd. The main drafters. Zhang Jingwen, Jiang Jianguo, Tiansu Xia, Liu Yuqin, Chunlan floor. This standard replaces the standards previously issued as follows. --- GB 6620-1986, GB/T 6620-1995. Wafer warpage non-contact test method1 ScopeThis standard specifies the silicon single crystal cutting, grinding film, polished (hereinafter referred to as wafers) warpage non-contact testing methods. This standard applies to measuring the diameter larger than 50mm, a thickness greater than the circular silicon 180μm. This standard also applies to measure other half Conductor wafer warpage. The purpose of this test method is used for incoming inspection or process control. This test method is also applicable to the monitor plus member Thermo-chemical effect during processing of wafer warpage.2 Normative referencesThe following documents contain provisions which, through reference in this standard, constitute provisions of this standard. For dated references, subsequent Repair orders (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard. GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan (GB/T 2828.1-2003, ISO 2859-1.1999, IDT) GB/T 6618 wafer thickness and total thickness variation of test methods GB/T 14264 semiconductor material terms3 Terms and DefinitionsThe semiconductor material and the following terms and definitions GB/T 14264 apply to this standard established. 3.1 Positive and back surfaces of the wafer track equidistant points. 3.2 Quality standards in the region, a free, non-clamped silicon planes in reference to the maximum and minimum relative difference in distance plane.4 Method summaryPlaced on a silicon wafer ring 3 reference fulcrum, three fulcrum forming a reference plane. A tester probe on the wafer, along the lower surface Synchronous scanning specified path. During the scanning process, pairs given, the distance between the probe and the surface of the silicon wafer has recently obtained from each pair From the difference. The difference between the maximum and the minimum distance between the pair of half the difference is to test the value of wafer warpage. A scan path in FIG. Shown. Typical wafer warpage schematic form shown in Fig. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 6620-2009_English be delivered?Answer: Upon your order, we will start to translate GB/T 6620-2009_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 6620-2009_English with my colleagues?Answer: Yes. 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Unless special scenarios such as technical constraints or academic study, you should always prioritize to purchase the latest version GB/T 6620-2009 even if the enforcement date is in future. Complying with the latest version means that, by default, it also complies with all the earlier versions, technically. |
