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GB/T 30855-2014 English PDF

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US$299.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email.
GB/T 30855-2014: GaP substrates for LED epitaxial chips
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 30855-2014	299	Add to Cart	3 days	GaP substrates for LED epitaxial chips	Valid

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Basic data

Standard ID: GB/T 30855-2014 (GB/T30855-2014)
Description (Translated English): GaP substrates for LED epitaxial chips
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H83
Classification of International Standard: 29.045
Word Count Estimation: 13,125
Date of Issue: 7/24/2014
Date of Implementation: 4/1/2015
Quoted Standard: GB/T 191; GB/T 1555; GB/T 2828.1; GB/T 4326; GB/T 6616; GB/T 6618; GB/T 6620; GB/T 6621; GB/T 6624; GB/T 13387; GB/T 13388; GB/T 14140; GB/T 14264; GB/T 14844; GJB 3076-1997
Regulation (derived from): National Standards Bulletin No. 19, 2014
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the LED epitaxial silicon single-crystal gallium phosphide substrate sheet (hereinafter referred to as substrate) requirements, test methods and marking, packaging, transportation, storage, quality certificate and purchase order (o

GB/T 30855-2014: GaP substrates for LED epitaxial chips

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
GaP substrates for LED epitaxial chips ICS 29.045 H83 National Standards of People's Republic of China LED epitaxial silicon substrate using gallium phosphide Issued on. 2014-07-24 2015-04-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and materials Technical Committee (SAC/TC 203/SC2) jointly proposed and managed. This standard is mainly drafted by. Semiconductors, Chinese Academy of Sciences, there are new research Photoelectric Material Co., Ltd., Yunnan Branch Xinyuan crystal material Material Limited. The main drafters of this standard. Zhao Youwen, mention Liu Wang, Linquan, Huifeng, Zhao strong. LED epitaxial silicon substrate using gallium phosphide

1 Scope

This standard specifies the LED epitaxial silicon single-crystal gallium phosphide substrate sheet (hereinafter referred to as substrate) requirements, test methods and marks, package Loading, transport, storage, quality certificate and purchase order (or contract) content. This standard applies to single-crystal gallium phosphide substrate LED epitaxial chips.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 191 Packaging - Pictorial signs GB/T 1555 to the measurement method of a semiconductor single crystal GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan GB/T 4326 extrinsic semiconductor single crystals Hall mobility and Hall coefficient measurements GB/T 6616 and the semiconductor wafer resistivity silicon thin film layer resistance test method of non-contact eddy current method GB/T 6618 wafer thickness and total thickness variation of test methods GB/T 6620 wafer warpage non-contact test method GB/T 6621 Test Method for wafer surface flatness GB/T 6624 polished silicon surface quality by visual inspection GB/T 13387 and other electronic materials silicon wafer reference surface length measurement method GB/T 13388 wafer reference surface crystallographic orientation of the X-ray test method GB/T 14140 wafer diameter measuring method GB/T 14264 semiconductor material terms GB/T 14844 semiconductor material grades that way GJB3076-1997 gallium phosphide single chip specification

3 Terms and Definitions

Terms and definitions GB/T 14264 apply to this document defined.

4 Requirements

4.1 Classification Gallium phosphide substrate divided by the conductivity type of n-type and p-type two types. Grade 4.2 Gallium phosphide substrate grades that according to the provisions of GB/T 14844 of. ......

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Tips & Frequently Asked Questions:

Question 1: How long will the true-PDF of GB/T 30855-2014_English be delivered?

Answer: Upon your order, we will start to translate GB/T 30855-2014_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.

Question 2: Can I share the purchased PDF of GB/T 30855-2014_English with my colleagues?

Answer: Yes. The purchased PDF of GB/T 30855-2014_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.

Question 3: Does the price include tax/VAT?

Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countries

Question 4: Do you accept my currency other than USD?

Answer: Yes. If you need your currency to be printed on the invoice, please write an email to Sales@ChineseStandard.net. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.