GB/T 29054-2019 English PDF

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GB/T 29054-2019: Casting multi-crystalline silicon brick for photovoltaic solar cell
Status: Valid

GB/T 29054: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 29054-2019	199	Add to Cart	3 days	Casting multi-crystalline silicon brick for photovoltaic solar cell	Valid
GB/T 29054-2012	279	Add to Cart	3 days	Solar-grade casting multi-crystalline silicon brick	Obsolete

Similar standards

GB/T 12963   GB/T 29055   GB/T 31854   GB/T 25074   

Basic data

Standard ID: GB/T 29054-2019 (GB/T29054-2019)
Description (Translated English): Casting multi-crystalline silicon brick for photovoltaic solar cell
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H82
Classification of International Standard: 29.045
Word Count Estimation: 10,127
Date of Issue: 2019-06-04
Date of Implementation: 2020-05-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 29054-2019: Casting multi-crystalline silicon brick for photovoltaic solar cell

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Casting multi-crystalline silicon brick for photovoltaic solar cell ICS 29.045 H82 National Standards of People's Republic of China Replace GB/T 29054-2012 Cast polycrystalline silicon block for solar cell 2019-06-04 released 2020-05-01 Implementation State Administration for Market Regulation Issued by China National Standardization Administration

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 29054-2012 "Solar Grade Cast Polycrystalline Silicon Block". This standard is compared with GB/T 29054-2012, except The main technical changes besides editorial changes are as follows. ---Modified the scope of application, and changed "suitable for polycrystalline silicon blocks using casting technology to prepare polycrystalline silicon wafers" to "suitable for casting technology Quasi-square polycrystalline silicon blocks (including monocrystalline silicon blocks) obtained by cutting on the prepared silicon ingots. The product is used for further cutting into silicon wafers Making solar cells" (see Chapter 1, Chapter 1 of the.2012 edition). --- Deleted GB/T 6616, SEMIPV1-0709 in the normative reference documents, and added GB/T 1554, GB/T 2828.1- 2012, GB/T 31854, moved GB/T 1551, GB/T 1553, GB/T 1557, GB/T 1558 to references (see Chapter 2, Chapter 2 of the.2012 edition). ---The definition of silicon block has been deleted, and the definition of effective height, single crystal-like and maximum grain area ratio has been added (see Chapter 3,.2012 Chapter 3 of the edition). --- Deleted the classification (see Chapter 4 of the.2012 edition). ---The end face size is changed from 125mm×125mm, 156mm×156mm to 156.75mm×156.75mm, other sizes, The recommended increase or decrease is an integer multiple of 1mm (see 4.1.1, see Chapter 4 of the.2012 edition). ---Modified the end face size and allowable deviation (see 4.1.1, Chapter 4, 5.1.6 of the.2012 edition). ---Modified the carrier lifetime requirements, from ≥1μs to not less than 2μs (see 4.2.3, 5.2 in the.2012 edition). ---Modified the requirement of interstitial oxygen content, from ≤8×1017atoms/cm3 to not more than 6×1017atoms/cm3 (see 4.3, 5.2 of the.2012 edition). ---The maximum grain area ratio and defect density requirements, test methods, inspection rules, etc. of monocrystalline silicon blocks have been added (see 4.7, 4.8, 5.13, 5.14, Chapter 6). --- The requirement for boron concentration has been deleted (see 5.2 in the.2012 edition). --- Modified inspection items, sampling and determination of inspection results (see 6.3, 6.4, 6.5,.2012 edition of 7.3, 7.4, 7.5). ---Appendix A has been added, which lists common monocrystalline silicon blocks with different maximum grain area ratios (see Appendix A). This standard is composed of the National Semiconductor Equipment and Material Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Material Standard The material sub-committee of the Chemical Technology Committee (SAC/TC203/SC2) jointly proposed and managed. Drafting organizations of this standard. Jiangsu GCL Silicon Material Technology Development Co., Ltd., Zhenjiang Rende New Energy Technology Co., Ltd., Jiangxi Saiwei LDK Solar High-Tech Co., Ltd., Yichang CSG Silicon Materials Co., Ltd., Non-ferrous Metal Technology and Economic Research Institute, Yangzhou Rongde New Energy Division Technology Co., Ltd., Yingli Energy (China) Co., Ltd. The main drafters of this standard. Wan Yuepeng, Tang Jun, You Da, Lin Qingxiang, Su Lei, Yang Suxin, Yu Gang, Gao Changkun, Chang Chuanbo, Li Jianmin, He Liang, Chen Faqin, Sun Peiya, Zhang Lei. The previous versions of the standard replaced by this standard are as follows. ---GB/T 29054-2012. Cast polycrystalline silicon block for solar cell

1 Scope

This standard specifies the requirements, test methods, inspection rules, markings, packaging of cast polycrystalline silicon blocks for solar cells (hereinafter referred to as silicon blocks) Contents of installation, transportation, storage, quality certificate and purchase order (or contract). This standard applies to quasi-square polycrystalline silicon blocks (including monocrystalline silicon blocks) cut from silicon ingots prepared by casting technology. Note. Polycrystalline silicon blocks are cut into silicon wafers and used to make solar cells.

2 Normative references

The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article Pieces. For undated references, the latest version (including all amendments) applies to this document. GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials GB/T 1554 Silicon crystal integrity chemical preferred corrosion inspection method GB/T 2828.1-2012 Sampling inspection procedure by attributes Part 1.Batch inspection sampling searched by acceptance quality limit (AQL) plan GB/T 14264 Terminology of Semiconductor Materials GB/T 31854 Inductively coupled plasma mass spectrometry method for measuring metal impurity content in silicon materials for photovoltaic cells

3 Terms and definitions

The following terms and definitions defined in GB/T 14264 apply to this document. 3.1 Effectiveheight The silicon block meets the cutting height of various technical requirements. 3.2 Quasi-monocrystalinesilicon Through the single crystal seed crystal, the cast polycrystal formed by the directional solidification method is grown. The crystal has large grains obviously in the same direction as the seed crystal. It is called cast single crystal, quasi single crystal, etc. 3.3 The percentage of the largest grain area thepercentageofthelargestsinglegrain The ratio of the area of the largest crystal grain area with the specified crystal orientation on the cross-section of the single-crystal silicon block to the total cross-sectional area of the single-crystal silicon block.

4 requirements

4.1 Dimensions 4.1.1 The end face of the silicon block is quasi-square, the end face size is 156.75mm×156.75mm, and the allowable size deviation is ±0.25mm. Need it Other size, size increase or decrease should be an integer multiple of 1mm. 4.1.2 The effective height of the silicon block should not be less than 100mm. ......

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