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Test method for measuring compensation degree of silicon materials used for photovoltaic applications
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Basic data
| Standard ID | GB/T 29850-2013 (GB/T29850-2013) |
| Description (Translated English) | Test method for measuring compensation degree of silicon materials used for photovoltaic applications |
| Sector / Industry | National Standard (Recommended) |
| Classification of Chinese Standard | H82 |
| Classification of International Standard | 29.045 |
| Word Count Estimation | 7,768 |
| Quoted Standard | GB/T 4326; GB/T 14264; GB/T 24581; GB/T 29057 |
| Regulation (derived from) | National Standards Bulletin No. 22 of 2013 |
| Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China |
| Summary | This standard specifies: photovoltaic cells with silicon material compensation degree measurement and analysis methods. This standard applies to: photovoltaic cells with non-doped silicon material compensation degree measurement and analysis. |
GB/T 29850-2013: Test method for measuring compensation degree of silicon materials used for photovoltaic applications
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Test method for measuring compensation degree of silicon materials used for photovoltaic applications
ICS 29.045
H82
National Standards of People's Republic of China
Solar cell silicon material compensation Measurement Method
Issued on. 2013-11-12
2014-04-15 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
Please note that some of the content of this document may involve patents. Release mechanism of the present document does not assume responsibility for the identification of these patents.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and focal points.
This standard was drafted. the information industry materials for Quality Supervision and Inspection Center, China Electronics Standardization Institute, Suntech too
Shenyang Electric Power Co., auxiliary materials and electronic functional State Quality Supervision and Inspection Center, Tianjin Central European Semiconductor Materials Technology Co.,
the company.
The main drafters of this standard. Dong Yan Hui, He Xiukun, Zhengcai Ping, Pei Kuaichuan, Fengya Bin, Road King Gang, Zhang Xue-nan.
Solar cell silicon material compensation Measurement Method
1 Scope
This standard specifies the method for measurement and analysis of silicon photovoltaic material compensation degree.
This standard applies to photovoltaic cells with a non-doped silicon material to measure and analyze the degree of compensation.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 4326 extrinsic semiconductor single crystals Hall mobility and Hall coefficient measurements
GB/T 14264 semiconductor material terms
Measurement Silicon Crystal Ⅲ GB/T 24581 cryogenic Fourier transform infrared spectroscopy, test methods Ⅴ family impurities
GB/T 29057 by zone melting crystal pulling polycrystalline silicon rod and spectroscopy evaluation procedures
3 Terms and Definitions
Terms and definitions GB/T 14264 apply to this document defined.
4 principle of the method
The use of the carrier concentration and temperature variation of electrical neutrality equation, n (P) -Tl curve fitting analysis by computer, thus
To obtain the degree of compensation. Neutral equation (N type in a sample, for example) as shown in Formula (1).
n (n NA)
ND-NA-n =
NC
gA
· Exp (-Ej/kT) (1)
Where NC is calculated, see formula (2).
NC = 2
2πm * akT
(2)
Ionized impurity concentration dependence see equation (3).
n300 = ND-NA (3)
By the formula (1), (2), (3) using the principle of least squares, and appropriate adjustments gA, m * a, ND, NA, Ej5 quantities for data fitting to give
The degree of compensation to see the expression of formula (4), (5).
Kp = ND/NA (P) type (4)
KN = NA/ND (N) type (5)
According to GB/T 4326, the samples undergo a variable temperature Hall measurements, test data calculated by the formula (6) to give nT-1 curve.
n = γ/e · RΗ (6)
Formula (1) to (6).
N --- carrier concentration, units per cubic centimeter (cm-3);
NA --- acceptor impurity concentration, atoms · cm-3;
...
