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Std ID |
Description (Standard Title) |
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GB/T 7577-1996
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Blank detail specification for case-rated bipolar transistors for low-frequency amplification
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GB/T 4586-1994
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Semiconductor devices Discrete devices. Part 8: Field-effect transistors
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GB/T 4587-1994
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Semiconductor discrete devices and integrated circuits. Part 7: Bipolar transistors
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GB/T 11590-1989
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International data transmission services and optional user facilities in public data networks
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GB/T 7576-1987
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Blank detail specification for case-rated bipolar transistors for high-frequency amplification
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GB/T 7581-1987
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Dimensions of outlines for semiconductor discrete devices
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GB/T 6217-1986
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Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification
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GB/T 6219-1986
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Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
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GB/T 6256-1986
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Blank detail specification for industrial heating triodes
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GB/T 21039.1-2007
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Semiconductor devices -- Discrete devices -- Part 4-1: Microwave diodes and transistors -- Microwave field effect transistors -- Blank detail specification
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GB/T 6589-2002
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Semiconductor devices -- Discrete devices -- Part 3-2: Signal (including switching) and regulator diodes -- Blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)
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GB/T 6588-2000
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Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section One. Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
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GB/T 15649-1995
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Blank detail specification for semiconductor laser diodes
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GB/T 6571-1995
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Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes
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GB/T 15137-1994
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Blank detail specification for Gunn diodes
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GB/T 15177-1994
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Blank detail specification for mircowave detectors and mixer diodes
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GB/T 15178-1994
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Blank detail specification for variable capacitance diodes
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GB/T 14863-1993
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Standard test method for net carrier density in silicon eqitaxial layers by voltage-capacitance of gated and ungated diodes
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GB/T 13063-1991
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Blank detail specification for current-regulator and current-reference diodes
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GB/T 13066-1991
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Blank detail specification for unijunction transistors
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GB/T 12562-1990
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Blank detail specification for PIN diodes
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GB/T 6570-1986
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Measuring methods for microwave diodes
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GB/T 6588-1986
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Blank detail specification for general purpose signal and/or switching semiconductor diodes
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GB/T 6589-1986
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Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature-compensated precision reference diodes
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GB/T 45716-2025
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Semiconductor devices - Bias-temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs)
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GB/T 45718-2025
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Semiconductor devices - Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
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GB/T 45719-2025
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Semiconductor devices - Hot carrier test on metal-oxide semiconductor (MOS) transistors
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GB/T 45721.1-2025
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Semiconductor devices - Stress migration test - Part 1: Copper stress migration test
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GB/T 45722-2025
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Semiconductor devices - Constant current electromigration test
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GB/T 4937.34-2024
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Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
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GB/T 4937.35-2024
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Semiconductor devices - Mechanical and climatic test methods - Part 35: Acoustic microscopy for plastic encapsulated electronic components
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GB/T 42706.2-2023
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Electronic components - Long-term storage of electronic semiconductor devices - Part 2: Deterioration mechanisms
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GB/T 42706.5-2023
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Electronic components - Long-term storage of electronic semiconductor devices - Part 5: Die and wafer devices
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GB/T 42709.5-2023
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Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches
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GB/T 42709.7-2023
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Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection
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GB/T 4937.23-2023
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Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
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GB/T 4937.27-2023
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Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge(ESD) sensitivity testing - Machine model(MM)
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GB/T 4937.31-2023
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Semiconductor devices - Mechanical and climatic test methods - Part 31: Flammability of plastic-encapsulated devices(internally induced)
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GB/T 4937.32-2023
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Semiconductor devices - Mechanical and climatic test methods - Part 32: Flammability of plastic-encapsulated devices(externally induced)
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GB/T 4937.42-2023
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Semiconductor devices - Mechanical and climatic test methods - Part 42: Temperature and humidity storage
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GB/T 42709.19-2023
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Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
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GB/T 4587-2023
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Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
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GB/T 4937.26-2023
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Semiconductor devices - Mechanical and climate test methods - Part 26: Electrostatic discharge(ESD)sensitivity testing - Human body model(HBM)
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GB/T 4937.11-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 11: Rapid change of temperature -- Two-fluid-bath method
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GB/T 4937.12-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 12: Vibration, variable frequency
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GB/T 4937.13-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 13: Salt atmosphere
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GB/T 4937.14-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 14: Robustness of terminations (lead integrity)
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GB/T 4937.15-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 15: Resistance to soldering temperature for through-hole mounted devices
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GB/T 4937.17-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 17: Neutron irradiation
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GB/T 4937.18-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose)
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GB/T 4937.19-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 19: Die shear strength
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GB/T 4937.201-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 20-1: Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat
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GB/T 4937.20-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat
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GB/T 4937.21-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 21: Solderability
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GB/T 4937.22-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 22: Bond strength
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GB/T 4937.30-2018
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Semiconductor devices -- Mechanical and climatic test methods -- Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing
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GB/T 249-2017
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The rule of type designation for discrete semiconductor devices
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GB/T 29827-2013
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Information security technology -- Trusted computing specification -- Motherboard function and interface of trusted platform
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GB/T 18910.11-2012
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Liquid crystal display devices -- Part 1-1: Terminology and symbols
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GB/T 4937.3-2012
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Semiconductor devices -- Mechanical and climatic tests methods -- Part 3: External visual examination
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GB/T 4937.4-2012
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Semiconductor devices -- Mechanical and climatic test methods -- Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
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GB/T 18910.22-2008
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Liquid crystal display devices -- Part 2-2: Matrix colour LCD modules -- Blank detail specification
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GB/T 18910.41-2008
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Liquid crystal display devices -- Part 4-1: Matrix colour LCD modules -- Essential ratings and characteristics
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GB/T 20870.1-2007
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Semiconductor devices -- Part 16-1: Microwave integrated circuits -- Amplifiers
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GB/T 20516-2006
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Semiconductor devices -- Discrete devices -- Part 4: Microwave devices
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GB/T 20521-2006
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Semiconductor devices -- Part 14-1: Semiconductor sensors -- General and classification
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GB/T 20522-2006
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Semiconductor devices -- Part 14-3: Semiconductor sensors -- Pressure sensors
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GB/T 4589.1-2006
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Semiconductor devices -- Part 10: Generic specification for discrete devices and integrated circuits
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GB/T 4937.1-2006
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Semiconductor devices -- Mechanical and climatic test methods -- Part 1: General
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GB/T 4937.2-2006
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Semiconductor devices -- Mechanical and climatic test methods -- Part 2: Low air pressure
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GB/T 18910.2-2003
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Liquid crystal and solid-state display devices -- Part 2: Liquid crystal display modules sectional specification
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GB/T 18910.1-2002
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Liquid crystal and solid-state display devices -- Part 1: Generic specification
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GB/T 11499-2001
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Letter symbols for discrete semiconductor devices
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GB/T 12560-1999
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Semiconductor devices. Sectional specification for discrete devices
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GB/T 17573-1998
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Semiconductor devices. Discrete devices and integrated circuits. Part 1: General
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GB/T 15651-1995
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Semiconductor devices--Discrete devices and integrated circuits. Part 5: Optoelectronic devices
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GB/T 4937-1995
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Mechanical and climatic test methods for semiconductor devices
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GB/T 12300-1990
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Test methods of safe operating area for power transistors
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GB/T 12560-1990
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Semiconductor devices--Sectional specification for discrete devices
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GB/T 249-1989
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The rule of type designation for discrete semiconductor devices
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GB/T 4589.1-1989
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Semiconductor devices!*Generic specification for discrete devices and integrated circuits
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GB/T 45618-2025
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Technical requirements for solar blind ultraviolet image intensifier
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GB/T 13709-2015
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Blank detail specification of X-ray tubes for industry
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GB/T 12078-2012
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General specification for X-ray tubes
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GB/T 12079-2012
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Measurements of the photoelectric properties for X-ray tubes
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GB/T 5295-2012
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The spectral response characteristic series of photocathodes
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GB/T 6996-2012
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Test charts of transparencies for television
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GB/T 13170-2011
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Test charts of reflection for television
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GB/T 15648-1995
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Methods of measurement for glow discharge display tubes
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GB/T 3790-1995
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Methods of measurement for fluorescent display tubes
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GB/T 6428-1995
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Methods of the measurement for hydrogen thyratron tubes
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GB/T 15301-1994
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General specification for gas lasers
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GB/T 3213-1994
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Methods of measurement for thyratrons and gas-filled rectifier tubes
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GB/T 14110-1993
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General specification for thyratrons and gas-filled rectifier tubes
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GB/T 14111-1993
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Blank detail specification for thyratrons and gas-filled rectifier tubes
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GB/T 14182-1993
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Generic specification for image-converter tubes and image intensifier tubes
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GB/T 14183-1993
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Blank detail specification for image-converter tubes and image intensifier tubes
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GB/T 14184-1993
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The methods of measurement for imageconverter tubes and image intensifier tubes
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GB/T 14186-1993
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Generic specification for gas-filled voltage Stabilizing tubes
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GB/T 14279-1993
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Blank detail specification for AC plasma display devices
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