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GB/T 45722-2025: Semiconductor devices - Constant current electromigration test
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 45722-2025 | English | 294 |
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Semiconductor devices - Constant current electromigration test
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GB/T 45722-2025
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Basic data | Standard ID | GB/T 45722-2025 (GB/T45722-2025) | | Description (Translated English) | Semiconductor devices - Constant current electromigration test | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L40 | | Classification of International Standard | 31.080.01 | | Word Count Estimation | 14,111 | | Date of Issue | 2025-05-30 | | Date of Implementation | 2025-09-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 45722-2025: Semiconductor devices - Constant current electromigration test---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.080.01
CCSL40
National Standard of the People's Republic of China
Constant current electromigration test for semiconductor devices
(IEC 62415.2010, IDT)
Released on 2025-05-30
2025-09-01 Implementation
State Administration for Market Regulation
The National Standardization Administration issued
Table of contents
Preface III
1 Scope 1
2 Normative references 1
3 Terms, definitions and symbols 1
4 Background 2
5 Sample size 2
6 Test Structure 2
7 Test conditions 3
8 Failure criteria 3
9 Data Analysis 3
References 6
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents"
Drafting.
This document is equivalent to IEC 62415.2010 "Constant current electromigration test for semiconductor devices".
This document adds a chapter on “Normative References”.
Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.
This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).
This document was drafted by. the Fifth Institute of Electronics of the Ministry of Industry and Information Technology, Xidian University, and the First Institute of Electronics of China Electronics Technology Group Corporation.
13th Research Institute, Shenzhen Weizhao Semiconductor Co., Ltd., Shenzhen Chengxin Micro Technology Co., Ltd., Guangdong University of Technology, Zhongshao Xuan
Standard Technology Group Co., Ltd. and Shenzhen Tiancheng Lighting Co., Ltd.
The main drafters of this document are. Zhang Xiaowen, Lin Xiaoling, You Hailong, Zhou Bin, Yin Lijing, He Zhiyuan, Lai Ping, Zhang Zhangang, Lei Dengyun, Wang Tieyang,
Meng Linghui, Chen Yiqiang, Peng Hao, Li Weicong, Cao Jianlin, Cui Congjun, and Lin Jiangeng.
Constant current electromigration test for semiconductor devices
1 Scope
This document describes the general constant current electromigration test method for metal interconnects, connecting via chains and contact hole chains.
2 Normative references
This document has no normative references.
3 Terms, definitions and symbols
3.1 Notation
The following symbols apply to this document.
3.1.1
Current density in via Jvia_use
The maximum current density allowed to flow through the through-hole of an actual product.
3.1.2
Current density in metal interconnect Jline_use
The maximum current density allowed to flow in the metal interconnect line of an actual product.
3.1.3
Current density in the via during the test Jvia_test
Current density in a through-hole test structure during electromigration testing.
3.1.4
Current density in metal interconnects during the test Jline_test
Current density in a metal interconnect test structure during electromigration testing.
3.1.5
Failure time t(x%)
The failure time with a cumulative failure probability of x%.
Note. For the calculation method of t(50%), see Chapter 9.
3.2 Terms and definitions
The following terms and definitions apply to this document.
3.2.1
Test structure TEG
Different test structures of metal interconnects, via chains and contact chains for electromigration testing.
3.2.2
Blechlength
The critical length of the interconnect line, below which electromigration failure is less likely to occur.
NOTE. The drift of metal atoms can lead to the accumulation of stress in metal interconnects, which in turn causes the reflow of atoms.
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