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GB/T 4587-2023 English PDF

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GB/T 4587-2023: Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
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GB/T 4587: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
GB/T 4587-2023English1919 Add to Cart 10 days [Need to translate] Semiconductor devices - Discrete devices - Part 7: Bipolar transistors Valid GB/T 4587-2023
GB/T 4587-1994EnglishRFQ ASK 8 days [Need to translate] Semiconductor discrete devices and integrated circuits. Part 7: Bipolar transistors Obsolete GB/T 4587-1994
GB 4587-1984EnglishRFQ ASK 11 days [Need to translate] Measuring methods for bipolar transistors Obsolete GB 4587-1984

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Basic data

Standard ID GB/T 4587-2023 (GB/T4587-2023)
Description (Translated English) Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L40
Classification of International Standard 31.080.30
Word Count Estimation 96,943
Date of Issue 2023-09-07
Date of Implementation 2024-04-01
Older Standard (superseded by this standard) GB/T 4587-1994
Issuing agency(ies) State Administration for Market Regulation, China National Standardization Administration

GB/T 4587-2023: Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.080.30 CCSL40 National Standards of People's Republic of China Replace GB/T 4587-1994 Semiconductor devices discrete devices Part 7.Bipolar Transistors (IEC 60747-7.2019, MOD) Published on 2023-09-07 2024-04-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee

Table of contents

Preface V Introduction VIII 1 Scope 1 2 Normative reference documents 1 3 Terms and Definitions 1 4 text symbols 6 4.1 Overview 6 4.2 Supplementary subscript 6 4.3 List of character symbols 6 4.3.1 Overview 6 4.3.2 Voltage 7 4.3.3 Current 7 4.3.4 Power 8 4.3.5 Electrical parameters 8 4.3.6 Frequency parameter 11 4.3.7 Switch parameters 12 4.3.8 Loss 13 4.3.9 Other parameters 13 4.3.10 Paired bipolar transistors 14 4.3.11 Resistor biased transistor 14 5 Basic ratings and characteristics14 5.1 Overview 14 5.2 Small signal transistors 15 5.2.1 Rated value (limit value) 15 5.2.2 Feature 15 5.3 Linear Power Transistors 16 5.3.1 Rated value (limit value) 16 5.3.2 Feature 17 5.4 High-frequency power transistors for amplification and oscillation 18 5.4.1 Rated value (limit value) 18 5.4.2 Feature 18 5.5 Switching transistor 20 5.5.1 Rated value (limit value) 20 5.5.2 Feature 21 5.6 Resistor-biased transistors 24 5.6.1 Rated value (limit value) 24 5.6.2 Feature 24 6 Verification methods and test methods 25 6.1 Overview 25 6.2 Verification method of rated value (limit value) 25 6.2.1 Acceptance criteria 25 6.2.2 Collector current (IC) 26 6.2.3 Peak collector current (ICM) 26 6.2.4 Base current (IB) 27 6.2.5 Peak Base Current (IBM) 28 6.2.6 Collector-base voltage (VCBO, VCBS, VCBR, VCBX) 28 6.2.7 Collector-emitter voltage (VCEO, VCES, VCER, VCEX), output voltage (VO) 29 6.2.8 Emitter-base voltage (VEBO), input voltage (VI) 30 6.2.9 Safe working area31 6.2.10 Output current (IO) 34 6.2.11 Collector-emitter sustaining voltage 35 6.3 Characteristic testing methods 36 6.3.1 Turn-on time and turn-on loss when the load is inductive36 6.3.2 Turn-off time and turn-off loss when the load is inductive38 6.3.3 Collector-emitter cut-off current (DC method) (ICEO, ICEX, ICES, ICER) 39 6.3.4 Collector-base cut-off current (DC method) (ICBO) 40 6.3.5 Emitter-base cut-off current (DC method) (IEBO) 40 6.3.6 Collector-emitter saturation voltage (VCEsat) 40 6.3.7 Base-emitter saturation voltage (VBEsat) 42 6.3.8 Base-emitter voltage (DC method) (VBE) 43 6.3.9 Capacitor 44 6.3.10 Mixing parameters (small signal and large signal) 47 6.3.11 Thermal resistance 53 6.3.12 Switching time when the load is resistive56 6.3.13 High frequency parameters (fT,ye,s.) 58 6.3.14 Noise figure (F) 66 6.3.15 Test method for paired bipolar transistors 72 6.3.16 Test methods for resistor-biased transistors 74 7 Reception and Reliability 78 7.1 General requirements 78 7.2 Special requirements 78 7.2.1 Durability test list 78 7.2.2 Durability test conditions 78 7.2.3 Characteristics and acceptance criteria for determining reception in reliability testing 78 7.3 Durability and reliability test methods 79 7.3.1 High Temperature Reverse Bias (HTRB) 79 7.3.2 Intermittent life test 79 7.4 Type tests and routine tests 80 7.4.1 Type test 80 7.4.2 Routine testing 80 Appendix A (informative) Determination of safe working area 82 Appendix B (informative) Structural number comparison list 84

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. This document is Part 7 of "Semiconductor Devices Discrete Devices". "Semiconductor Devices Discrete Devices" has released the following parts. ---Part 1.General provisions; ---Part 2.Rectifier diodes; ---Part 2-1.Blank detailed specification for ambient or case rated rectifier diodes (including avalanche rectifier diodes) below 100A; ---Part 2-2.Greater than 100A, environmental and case rated rectifier diodes (including avalanche rectifier diodes) blank details specification; ---Part 3.Signal (including switching) diodes and adjustment diodes; ---Part 3-1.Blank detailed specifications for signal diodes, switching diodes and controllable avalanche diodes; ---Part 3-2.Signal (including switching) diodes and adjustment diodes Voltage adjustment diodes Voltage reference diodes (not included Temperature Compensated Precision Reference Diode) Blank Detailed Specification; ---Part 4.Microwave devices; ---Part 4-1.Detailed specifications for microwave diodes and transistors microwave field effect transistors; ---Part 6.Thyristors; ---Part 6-1.Blank detailed specification for three-pole thyristor transistors rated for environments below 100A or case rating; ---Part 6-2.Blank detailed specifications for environmental or case-rated bidirectional three-pole thyristors below 100A; ---Part 6-3.Blank detailed specification for reverse blocking three-pole thyristors with current greater than 100A and environmental and case ratings; ---Part 7.Bipolar transistors; ---Part 7-1.Blank detailed specification for bipolar transistors rated for high and low frequency amplification environments; ---Part 7-2.Blank detailed specification for low-frequency amplifier case-rated bipolar transistors; ---Part 7-3.Blank detailed specification for bipolar transistors for switches; ---Part 7-4.Blank detailed specification for high-frequency amplifier case rated bipolar transistors; ---Part 8.Field effect transistors; ---Part 8-1.Blank detailed specifications for single-gate field effect transistors below 1GHz and 5W; ---Part 8-3.Blank detailed specification for field effect transistors for case-rated switches; ---Part 9.Insulated gate bipolar transistor (IGB T); ---Part 10.General Specifications for Discrete Devices and Integrated Circuits; ---Part 11.Specifications for discrete devices. This document replaces GB/T 4587-1994 "Semiconductor Discrete Devices and Integrated Circuits Part 7.Bipolar Transistors" and is consistent with Compared with GB/T 4587-1994, in addition to file structure adjustments and editorial changes, the main technical changes are as follows. a) The scope explicitly excludes microwave transistors and adds resistive bias transistors (see Chapter 1). b) Terms and definitions. 1) Removed transistor types, common terms, circuit configuration, collector series resistance, emitter series resistance, extrinsic base Terms and definitions of resistance, Allais voltage and S-parameters (see 1, 2, 3, 4.4, 4.5, 4.7, Chapter II of the.1994 edition 4.20, 5); 2) Added "specific functional area" (see 3.1), "turn-on time" and "off time" (see 3.3.7.2, 3.3.7.3), "collector- Emitter sustaining voltage" (see 3.3.8), "turn-on loss" and "turn-off loss" (see 3.3.9, 3.3.10), "resistance bias crystal The terms and definitions of "management" (see 3.2, 3.3.15~3.3.21). c) Text symbols. 1) Delete the "breakdown voltage" in the voltage parameters (see Chapter Ⅱ 6.4.1 of the.1994 edition) and the "inherent voltage" in the static parameters. No. forward current transfer ratio" (see Chapter II 6.4.4.1 of the.1994 edition), "emitter depletion layer capacitance, Collector depletion layer capacitance" (see Chapter Ⅱ 6.4.6 of the.1994 edition) and "External circuit parameters" (see Chapter Ⅱ of the.1994 edition Chapter 6.4.8) text symbols; 2) Added text symbols for "turn-on loss", "turn-off loss", "power increase efficiency" and "resistance biased transistor" (see 4.3.8, 4.3.9, 4.3.11). d) Basic ratings and characteristics. 1) Deleted the "high frequency parameters" of small signal transistors (see Chapter III, Section 1, 3.9, 3.11 of the.1994 edition); amplification and oscillation The maximum collector-emitter voltage (VCES) when the base and emitter of a high-frequency power transistor are short-circuited and the base is open-circuited The highest collector-emitter voltage (VCEO) when and/or the highest collector-emitter voltage when the external resistance is the specified value "Voltage (VCER)" (see Chapter III, Section 3, 5.3, 5.4, 5.5 of the.1994 edition); "Computer-aided circuit design of switching transistors" "Additional features of the design" (see Chapter III, Section 4, 3.4 of the.1994 edition); 2) All types of transistors have specified requirements for "thermal resistance" or "thermal characteristics" (see 5.2.2.11, 5.3.2.8, 5.4.2.11, 5.5.2.11, 5.6.2.8), paired bipolar transistors in small-signal transistors increase the "collector current ratio" (see 5.2.2.12), the switching transistor increases the "collector-emitter sustaining voltage, safe operating area, switching losses" (see 5.5.1.2.4, 5.5.1.4, 5.5.2.6, 5.5.2.7); 3) Added "resistance bias transistor" (see 5.6). e) Test method. 1) Delete the "Test method for expressions of h-parameters of common base and common emitter" in the general test method (see the.1994 edition Chapter IV, Section 1, 9.5), "Verification method of secondary breakdown current rating" (see Chapter IV, Section 1 of the.1994 edition 10.3), "Real part of common-emitter short-circuit input impedance Re(h11e)" (see Chapter IV, Section 1, 13.4 of the.1994 edition), and "Benchmark testing methods" (see Chapter IV, Section 2 of the.1994 edition); 2) Added the verification method of rated value (limit value). convert collector-base voltage, emitter-base voltage and collector-emitter The test method of extreme sustaining voltage is adjusted to the verification method of rated value (see 6.2.6, 6.2.7, 6.2.8, 6.2.11); added "Verification of current ratings, verification of reverse bias safe operating area and short circuit safe operating area" (see 6.2); 3) Added "Test methods for switching time and switching loss when the load is inductive" (see 6.3.1, 6.3.2), "Base-emitter The pulse method (see 6.3.7.2), "Paired bipolar transistor and resistor biased transistor" test have been added to the "extreme saturation voltage" test. "Test method" (see 6.13.15, 6.13.16); 4) The base-emitter voltage (DC method) test circuit is changed from "common base" to "common emitter" (see 6.3.8); the load is a resistor The signal sampling of the switching time is changed from the voltage signal to the current signal (see 6.3.12). f) In the overview of mixing parameters, "The exception is h21c using a common collector configuration, h21c is calculated using h21e" to "Using The exception is the common collector configuration, h21e is calculated using h21c" (see 6.3.10.1, see Chapter IV, Section 2 of the.1994 edition 9). g) Reception and Reliability. 1) Added the criteria for acceptance after the durability test of power switching transistors and resistor bias transistors (see 7.2.3); 2) Changed the durability test method (see 7.3, see Chapter V, Section 1, 2 of the.1994 edition); 3) Added type tests and routine tests (see 7.4). This document is modified to adopt IEC 60747-7.2019 "Semiconductor Devices Discrete Devices Part 7.Bipolar Transistors". Compared with IEC 60747-7.2019, this document has many structural adjustments. A comparison of the structural number changes between the two documents is at a glance. See Appendix B for the table. There are technical differences between this document and IEC 60747-7.2019.Vertical single lines are used in the outer margins of the clauses involved. (|) is marked. The specific technical differences and their reasons are as follows. ---Change the "reference point temperature or crystallization (Ta or Tc)" to "ambient temperature or shell temperature (Ta or Tc)". The verification method is the same as the reference point temperature or crystallization (Ta or Tc). The temperature of the test site has nothing to do with the ambient temperature [see 6.2.10d)]; ---Change "For PNP transistors, exchange the polarity of the collector voltage source (VCC) and current direction (IE, IM) in Figure 33" to "For PNP transistors, the polarity of the collector voltage source (VCC) and current direction (IH, IM) in Figure 33 should be reversed" Road map 33 remains consistent [see 6.3.11.3c)]; ---Change "The horizontal distance ΔVEB between the two curves in Figure 34 increases with the current gradually increasing" to "With the current gradually increasing increasing and decreasing trend"; change the horizontal axis "emitter-base voltage change (ΔVEB)" to "emitter-base voltage (VEB)" (see 6.3.11.3), in order to comply with the product change rules; ---Change "ΔVEB(1) in Figure 35 is less than ΔVEB(2)" to "ΔVEB(1) is greater than ΔVEB(2)" (see 6.3.11.3) to match the product change pattern consistent. The following editorial changes have been made to this document. ---Added terminology symbols (see 3.2.5, 3.2.6, 3.3.1~3.3.7, 3.3.13~3.3.21); ---Change the title of Chapter 6 "Test Methods" to "Verification Methods and Test Methods" (see Chapter 6); ---Change the title "Test Method" of 6.3 to "Test Method of Characteristics" (see 6.3). Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This document was drafted by. Shijiazhuang Tianlin Shiwuer Electronics Co., Ltd., China Electronics Technology Group Corporation Thirteenth Research Institute, Harbin University of Technology, JJ Semiconductor Co., Ltd. The main drafters of this document. Zhao Yuling, Lu Ruiqin, Li Lixia, Song Fenngling, Li Xingji, Wang Likang, Han Dong, Zhang Chao, Yang Jianqun, Zhang Shijing, Zhao Shanlin. The previous versions of this document and the documents it replaces are as follows. ---First published in 1984 as GB 4587-1984; ---First revised to GB/T 4587-1994 in.1994; ---This is the second revision.

Introduction

Semiconductor discrete devices are common basic products in the electronics industry and are the most basic units in electronic systems. Their performance and reliability directly affect Impact on project quality and reliability. "Semiconductor Discrete Devices" is the basic standard for semiconductor discrete devices. The parameter system, verification, test methods and quality assessment of the device play an important role and are planned to be composed of 26 parts. ---Part 1.General principles. The purpose is to specify general principles or requirements for standards applicable to various types of discrete devices. ---Part 2.Rectifier diodes. The purpose is to specify the terminology, text symbols, basic ratings and characteristics of rectifier diodes and Product-specific requirements such as test methods. ---Part 2-1.Blank detailed specification for ambient or case rated rectifier diodes (including avalanche rectifier diodes) below 100A. The purpose is to provide the basis for detailed specifications for ambient or case rated rectifier diodes (including avalanche rectifier diodes) below 100A. Require. ---Part 2-2.Blank detailed regulations for rectifier diodes (including avalanche rectifier diodes) greater than 100A, environmental and case rated Fan. The purpose is to provide detailed specifications for rectifier diodes (including avalanche rectifier diodes) rated for environments above 100A and case ratings basic requirements. ---Part 3.Signal (including switching) diodes and adjustment diodes. The purpose is to specify signal diodes (including switching diodes tube), voltage reference diode and voltage adjustment diode, current adjustment diode terminology, text symbols, basic ratings and characteristics product-specific requirements such as properties and test methods. ---Part 3-1.Blank detailed specifications for signal diodes, switching diodes and controllable avalanche diodes. The purpose is to specify signal two Basic requirements for detailed specifications of diodes, switching diodes and controllable avalanche diodes. ---Part 3-2.Signal (including switching) diodes and adjustment diodes Voltage adjustment diodes Voltage reference diodes (not included Temperature Compensated Precision Reference Diode) Blank Detailed Specification. The purpose is to specify signal (including switching) diodes and adjustment diodes Basics of detailed specifications for voltage reference diodes (excluding temperature compensated precision reference diodes) in tube voltage adjustment diodes Require. ---Part 4.Microwave devices. The purpose is to specify the terminology, text symbols, basic ratings and characteristics, and testing of microwave devices. Product specific requirements such as methods. ---Part 4-1.Detailed specifications for microwave diodes and transistors microwave field effect transistors. The purpose is to specify microwave diodes and basic requirements for detailed specifications of microwave field effect transistors in transistors. ---Part 6.Thyristor. The purpose is to specify the terminology, text symbols, basic ratings and characteristics, and test methods of thyristors and other product-specific requirements. ---Part 6-1.Blank detailed specifications for environment or case rated reverse blocking three-pole thyristor transistors below 100A. The purpose is Specifies the basic requirements for detailed specifications for ambient or case rated reverse blocking three-pole thyristors below 100A. ---Part 6-2.Blank detailed specifications for environmental or case rated bidirectional three-pole thyristors below 100A. The purpose is to stipulate Basic requirements for detailed specifications for ambient or case rated bidirectional thyristors below 100A. ---Part 6-3.Blank detailed specification for reverse blocking three-pole thyristors with current greater than 100A and environmental and case ratings. The purpose is Basic requirements for the detailed specification of reverse blocking three-pole thyristors for environments with a specified current of 100A or above and case ratings. ---Part 7.Bipolar transistors. The purpose is to define the terminology, documentation and documentation for several types of bipolar transistors (except microwave transistors). Product-specific requirements such as symbols, basic ratings and characteristics, and test methods. ---Part 7-1.Blank detailed specification for bipolar transistors rated for high and low frequency amplification environments. The purpose is to specify high and low frequency amplification Basic requirements for detailed specifications of environmentally rated bipolar transistors. ---Part 7-2.Blank detailed specification for low-frequency amplifier case-rated bipolar transistors. The purpose is to specify the low frequency amplifier tube shell Basic requirements for rated bipolar transistors detailed specification. ---Part 7-3.Blank detailed specification for bipolar transistors for switches. The purpose is to provide detailed specifications for bipolar transistors used in switches. basic requirements of the model. ---Part 7-4.Blank detailed specification for high-frequency amplifier case-rated bipolar transistors. The purpose is to specify the amount of high-frequency amplifier tube shells Establishes the basic requirements for detailed specifications of bipolar transistors. ---Part 8.Field Effect Transistors. The purpose is to specify the terminology, text symbols, basic ratings and Product-specific requirements such as characteristics and test methods. ---Part 8-1.Blank detailed specifications for single-gate field effect transistors below 1GHz and 5W. The purpose is to specify 1GHz, 5W The following detailed specifications for single-gate field effect transistors are basic requirements. ---Part 8-3.Blank detailed specification for field effect transistors for case-rated switches. The purpose is to specify the rated switch application of the tube shell. Basic requirements for detailed specification of effect transistors. ---Part 9.Insulated Gate Bipolar Transistor (IGB T). The purpose is to define the terminology of several insulated gate bipolar transistors (IGB T), Product-specific requirements such as text symbols, basic ratings and characteristics, and test methods. ---Part 10.General specifications for discrete devices and integrated circuits. The purpose is to stipulate the general procedure for quality assessment of semiconductor devices and stipulate General principles of electrical characteristics test methods, climatic and mechanical tests, and durability tests. ---Part 11.Specifications for discrete devices. The purpose is to specify the quality assessment procedures required for the assessment of semiconductor discrete devices, Contents of inspection requirements, screening sequences, sampling requirements, tests and test methods. ---Part 15.Insulated power semiconductor devices. The purpose is to specify the terminology, text symbols, basic Product-specific requirements such as ratings and characteristics and test methods. ---Part 17.Basic and reinforced isolation electromagnetic and capacitive couplers. The purpose is to provide for basic and reinforced isolation of electromagnetic and electrical Product-specific requirements such as terminology, text symbols, basic ratings and characteristics, and test methods for capacitive couplers. "Semiconductor Discrete Devices" corresponds to each part of IEC 60747 to ensure consistency with international standards and realize semiconductor discrete devices The parameter system, verification methods, testing methods, reliability evaluation, quality level, etc. of the components are in line with international standards. By formulating this document, semiconductor Provide basis and important support for the development, production and inspection of discrete devices. Semiconductor devices discrete devices Part 7.Bipolar Transistors

1 Scope

This document gives the relevant requirements for the following types of bipolar transistors (except microwave transistors). ---Small signal transistors (except for switches and microwaves); ---Linear power transistors (except for switching, high frequency and microwave use); ---High-frequency power transistors for amplification and oscillation; ---Switching transistors for high-speed switches and power switches; --- Resistor biased transistor.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 2900.66-2004 Electrotechnical terminology semiconductor devices and integrated circuits (IEC 60050-521.2002, IDT) Note. GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1.General provisions (IEC 60747-1.1983, IDT) Note. GB/T 20516-2006 Semiconductor devices Discrete devices Part 4.Microwave devices (IEC 60747-4.2001, IDT)

3 Terms and definitions

The following terms and definitions apply to this document. 3.1 Specific functional areas 3.1.1 This area is the area where majority carriers are collected, and majority carriers transmitted through the base region and across the collector junction are collected. Note. In normal working mode, this functional area is located in the collector area, and in reverse working mode, it is located in the transmitting area. 3.1.2 This region is a region that provides majority carriers, and most carriers cross the emitter junction and are injected into the functional base region. Note. In normal working mode, this functional area is located in the transmitting area, and in reverse working mode, it is located in the collecting area. 3.1.3 functional base region functional base region This area is the control area, the main current flows through this area, and the concentration of majority carriers in this area depends on the size of the applied base current.

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