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GB/T 4937.27-2023: Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge(ESD) sensitivity testing - Machine model(MM)
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Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge(ESD) sensitivity testing - Machine model(MM)
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GB/T 4937.27-2023
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Basic data | Standard ID | GB/T 4937.27-2023 (GB/T4937.27-2023) | | Description (Translated English) | Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge(ESD) sensitivity testing - Machine model(MM) | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L40 | | Classification of International Standard | 31.080.01 | | Word Count Estimation | 14,137 | | Date of Issue | 2023-05-23 | | Date of Implementation | 2023-12-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 4937.27-2023: Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge(ESD) sensitivity testing - Machine model(MM)
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ICS 31:080:01
CCSL40
National Standards of People's Republic of China
Mechanical and climatic test methods for semiconductor devices
Part 27: Electrostatic Discharge (ESD) Susceptibility Test
Machine Model (MM)
Machine model (MM)
(IEC 60749-27:2012, IDT)
Released on 2023-05-23
2023-12-01 implementation
State Administration for Market Regulation
Released by the National Standardization Management Committee
foreword
This document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents"
drafting:
This document is part 27 of GB/T 4937 "Mechanical and Climate Test Methods for Semiconductor Devices": GB/T 4937 has been released
The following sections:
--- Part 1: General;
--- Part 2: Low pressure;
--- Part 3: External visual inspection;
--- Part 4: Highly Accelerated Steady State Damp Heat Test (HAST);
--- Part 11: Rapid temperature change double tank method;
--- Part 12: Frequency sweep vibration;
--- Part 13: Salt spray;
--- Part 14: Terminal strength (lead fastness);
--- Part 15: Resistance to soldering heat of through-hole mounted devices;
--- Part 17: Neutron irradiation;
--- Part 18: Ionizing radiation (total dose);
--- Part 19: Chip shear strength;
--- Part 20: Plastic-encapsulated surface mount devices are resistant to the combined effects of moisture and soldering heat;
--- Part 20-1: Handling, packaging, marking and transportation of surface mount devices sensitive to the combined effects of moisture and soldering heat;
--- Part 21: Solderability;
--- Part 22: Bonding strength;
--- Part 23: High temperature working life;
--- Part 26: Electrostatic discharge (ESD) susceptibility test Human body model (HBM);
--- Part 27: Electrostatic discharge (ESD) susceptibility test machine model (MM);
--- Part 30: Pretreatment of non-hermetic surface mount devices before reliability tests;
--- Part 31: Flammability of plastic encapsulated devices (internal causes);
--- Part 32: Flammability of plastic encapsulated devices (external causes);
--- Part 42: Temperature and humidity storage:
This document is equivalent to IEC 60749-27:2012 "Mechanical and climatic test methods for semiconductor devices - Part 27: Electrostatic discharge
(ESD) Sensitivity Test Machine Model (MM):
The following minimal editorial changes have been made to this document:
a) Change the electrical graphic symbols in Figure 1 in 4:2:4 to those specified in GB/T 4728 (all parts);
b) The voltage symbol "U" is added after "level voltage" in Table 1 of Chapter 5:
Please note that some contents of this document may refer to patents: The issuing agency of this document assumes no responsibility for identifying patents:
This document is proposed by the Ministry of Industry and Information Technology of the People's Republic of China:
This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78):
This document was drafted by: The Thirteenth Research Institute of China Electronics Technology Group Corporation, Hebei Beixin Semiconductor Technology Co:, Ltd:, Anhui Gaoxin
Zhongke Semiconductor Co:, Ltd:, Wuhan Gewuxin Technology Co:, Ltd:, Hebei Zhongdian Kehang Testing Technology Service Co:, Ltd:, Foshan Chuandong Magnetics
Electric Co:, Ltd:, Guangdong Zhongshaxuan Standardization Technology Research Institute Co:, Ltd:
The main drafters of this document: Chi Lei, Gao Jinhuan, Gao Lei, Xin Changlin, Peng Hao, Zhang Ruixia, Huang Jie, He Li, Zhao Peng, Wei Bing, Liu Honggang,
Yan Tianbao, Wang Jie:
Introduction
Semiconductor devices are common basic products in the electronics industry chain and are the most basic units in electronic systems: GB/T 4937 "Semiconductors
Mechanical and Climatic Test Methods for Bulk Devices" is the basic and universal standard for testing semiconductor devices:
The quality and reliability of the device play an important role, and it is proposed to be composed of 44 parts:
--- Part 1: General: The purpose is to specify general guidelines for mechanical and climatic test methods for semiconductor devices:
--- Part 2: Low air pressure: The purpose is to detect the ability of components and materials to avoid electrical breakdown failure:
--- Part 3: External visual inspection: The purpose is to detect whether the material, design, structure, marking and process quality of semiconductor devices meet the
Purchasing Documentation Requirements:
--- Part 4: Strongly Accelerated Steady State Damp Heat Test (HAST): The purpose is to specify the highly accelerated steady state damp heat test (HAST) to detect
Test the reliability of non-hermetic packaged semiconductor devices in humid environment:
--- Part 5: Steady-state temperature and humidity bias life test: The purpose is to specify the steady-state temperature and humidity bias life test to detect non-airtight
Reliability of packaged semiconductor devices in wet environments:
--- Part 6: High temperature storage: The purpose is to detect the influence of high temperature storage on semiconductor devices without applying electrical stress:
--- Part 7: Internal water vapor measurement and other residual gas analysis: The purpose is to detect the quality of the packaging process and provide relevant
information on the long-term chemical stability of the body in the shell:
--- Part 8: Sealing: The purpose is to detect the leak rate of semiconductor devices:
--- Part 9: Sign durability: The purpose is to test the durability of marks on semiconductor devices:
--- Part 10: Mechanical shock: The purpose is to test the suitability of semiconductor devices and printed board assemblies to withstand moderately severe shocks
ability:
--- Part 11: Rapid temperature change double tank method: The purpose is to specify the rapid temperature change of semiconductor devices (double tank method)
Test procedures, failure criteria, etc:
--- Part 12: Frequency sweep vibration: The purpose is to detect the impact of vibration on semiconductor devices within the specified frequency range:
--- Part 13: Salt spray: The purpose is to detect the corrosion resistance of semiconductor devices:
--- Part 14: Terminal strength (lead fastness): The purpose is to detect the lead/package interface of semiconductor devices and the firmness of leads:
Solidity:
--- Part 15: Resistance to soldering heat of through-hole mounted devices: The purpose is to test the vibration of through-hole mounted solid-state packaged semiconductor devices
The ability of peak soldering or soldering iron soldering leads to generate thermal stress:
--- Part 16: Particle collision noise detection (PIND): The purpose is to specify the detection method for the presence of free particles in cavity devices:
--- Part 17: Neutron irradiation: The purpose is to examine the susceptibility of semiconductor devices to performance degradation in a neutron environment:
--- Part 18: Ionizing radiation (total dose): The purpose is to provide for the assessment of the impact of low dose rate ionizing radiation on semiconductor devices:
Rapid annealing test method:
--- Part 19: Chip shear strength: The purpose is to detect the materials and processes used to mount semiconductor chips on sockets or substrates:
completeness of the process steps:
--- Part 20: Plastic surface mount devices resistance to combined effects of moisture and soldering heat: The purpose is to store in warehouse or dry by simulating
The moisture absorbed by plastic-encapsulated surface-mounted semiconductor devices in a dry packaging environment was evaluated to evaluate its resistance to soldering heat:
--- Part 20-1: Handling, packaging, marking and transportation of surface mount devices sensitive to the combined effects of moisture and soldering heat: Purpose
It is to regulate the operation, packaging, transportation and use of plastic-encapsulated surface-mounted semiconductor devices that are sensitive to the combined effects of moisture and soldering heat
method:
--- Part 21: Solderability: The purpose is to specify the lead-out terminals of component packages that are soldered with lead-tin solder or lead-free solder:
Solderability test procedure:
--- Part 22: Bonding strength: The purpose is to detect the bonding strength of semiconductor devices:
--- Part 23: High temperature working life: The purpose is to specify the effects of bias conditions and temperature on solid-state devices over time:
experiment method:
--- Part 24: Accelerated humidity unbiased strong accelerated stress test: The purpose is to test non-hermetic packaged solid-state devices in humid environment
environment reliability:
--- Part 25: Temperature cycle: The purpose is to detect semiconductor devices, components and circuit board assemblies subjected to extreme high temperatures and extreme
The ability of low temperature alternating action to induce mechanical stress:
--- Part 26: Electrostatic discharge (ESD) susceptibility test Human body model (HBM): The purpose is to specify reliable, repeatable
HBMESD test method:
--- Part 27: Electrostatic discharge (ESD) susceptibility test machine model (MM): The purpose is to specify reliable, repeatable MM
ESD test method:
--- Part 28: Electrostatic discharge (ESD) susceptibility testing Charged Device Model (CDM) device level: The purpose is to provide reliable,
Repeated CDMESD test method:
--- Part 29: Latch-up test: The purpose is to specify the method of detecting the latch-up characteristics of integrated circuits and the failure criterion of the latch:
--- Part 30: Pretreatment of non-hermetic surface mount devices before reliability testing: Intended to specify unsealed surface mount
Standard procedure for preconditioning components before reliability testing:
--- Part 31: Flammability of plastic encapsulated devices (internal causes): The purpose is to detect whether the plastic packaged device is caused by overload
Burning with heat:
--- Part 32: Flammability of plastic encapsulated devices (external causes): The purpose is to detect whether the plastic packaged device is caused by external heating
combustion:
--- Part 33: Accelerated moisture-resistant unbiased high-pressure cooking: The purpose is to identify the internal failure mechanisms of semiconductor device packages:
--- Part 34: Power cycle: The purpose is to detect the
To measure the thermal and mechanical stress resistance of semiconductor devices:
--- Part 35: Acoustic microscopy of plastic packaged electronic components: The purpose is to specify the accuracy of acoustic microscopes for plastic-encapsulated electronic components
Methods for performing defect (lamination, cracks, voids, etc:) detection:
--- Part 36: Steady-state acceleration: The purpose is to specify the test method for the steady-state acceleration of cavity semiconductor devices in order to detect their junction
Structural and mechanical type defects:
--- Part 37: Board-level drop test methods using accelerometers: The purpose is to specify the board level drop test using accelerometer
method, the drop test of surface mount devices can be repeatedly detected, and the common failure modes during product level testing can be reproduced at the same time:
--- Part 38: Soft error test methods for semiconductor devices with memory: The purpose is to specify the operation of semiconductor devices with memory
Test method for soft error susceptibility in energetic particle environments (e:g: alpha radiation):
--- Part 39: Measurement of moisture diffusivity and water solubility of organic materials for semiconductor devices: The purpose is to specify the application of semiconductor
Method for measuring moisture diffusivity and water solubility of organic materials for bulk device packaging:
--- Part 40: Board-level drop test methods using strain gauges: The purpose is to specify the board level drop test method using strain gauges:
This method enables repeatable testing of surface mount device drop tests while reproducing common failure modes during product-level testing:
--- Part 41: Non-volatile memory reliability test methods: The purpose is to specify the effective endurance, data
According to the requirements of maintenance and temperature cycle test:
--- Part 42: Temperature and humidity storage: The purpose is to specify the test method for testing the ability of semiconductor devices to withstand high temperature and high humidity environments:
--- Part 44: Neutron irradiation single event effects (SEE) test methods for semiconductor devices: The purpose is to specify the detection of high-density set
Test method for single event effect (SEE) of integrated circuits:
GB/T 4937 (all parts) is a one-to-one correspondence with IEC 60749 (all parts) to ensure that the test methods of semiconductor devices are consistent with those of the national
Consistent with international standards, to achieve semiconductor device inspection methods, reliability evaluation, and quality levels in line with international standards: Through the formulation of this series of standards, it is determined that
Unified test methods and stresses, while improving the semiconductor device standard system:
Mechanical and climatic test methods for semiconductor devices
Part 27: Electrostatic Discharge (ESD) Susceptibility Test
Machine Model (MM)
1 Scope
This document recommends semiconductor devices based on their susceptibility to damage or degradation from specified machine model (MM) electrostatic discharge (ESD):
Established standard procedures for ESD testing and classification of semiconductor devices: This document is used as an optional test method relative to the human body model ESD:
The purpose of this method is to provide reliable and repeatable ESD test results for accurate classification:
This document applies to semiconductor devices and is a destructive test:
The ESD test of semiconductor devices is carried out from this document, the human body model (HBM-see GB/T 4937:26) or other parts in the GB/T 4937 series
Choose from other test methods: The results of the MM and HBM tests were similar but not identical: Unless otherwise specified, the HBM test method is
selected method:
Note 1: The test methods in this document cannot really simulate the discharge of machines or metal tools, because this document uses a test circuit with high parasitic inductance, and
The real machine and metal tool discharge rise time is close to 100ps, and there is no inductive effect:
Note 2: The specific clauses of this document are in accordance with GB/T 37977:32-2019:
2 Normative references
This document has no normative references:
3 Terms and Definitions
The following terms and definitions apply to this document:
3:1
Device under test; DUT
Semiconductor devices for MMESD testing:
3:2
DUT failureDUTfailure
After ESD testing, one or more specified parameters are not met:
3:3
ESD withstand voltageESDwithstandvoltage
Under the premise that all DUTs pass the lower voltage level, the device parameters will not exceed the maximum voltage of the failure limit:
Note: Chapter 3 of this document is in accordance with GB/T 37977:32-2019, except for specific references to devices:
3:4
oscillating ringing
Noise component caused by large inductance in the discharge circuit:
4 devices
4:1 MMESD waveform generator
The device simulates MMESD to apply electrostatic discharge current pulses to the device under test: Equivalent Circuit and Test Equipment Evaluation of Waveform Generators
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