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GB/T 4937.23-2023: Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
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Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
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GB/T 4937.23-2023
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Basic data | Standard ID | GB/T 4937.23-2023 (GB/T4937.23-2023) | | Description (Translated English) | Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L40 | | Classification of International Standard | 31.080.01 | | Word Count Estimation | 16,148 | | Date of Issue | 2023-05-23 | | Date of Implementation | 2023-12-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 4937.23-2023: Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
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ICS31:080:01
CCSL40
National Standards of People's Republic of China
GB/T 4937:23-2023/IEC 60749-23:2011
Mechanical and climatic test methods for semiconductor devices
Part 23: High temperature working life
(IEC 60749-23:2011, IDT)
Released on 2023-05-23
2023-12-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Management Committee
foreword
This document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents"
drafting:
This document is part 23 of GB/T 4937 "Mechanical and Climate Test Methods for Semiconductor Devices": GB/T 4937 has been released
The following sections:
--- Part 1: General;
--- Part 2: Low pressure;
--- Part 3: External visual inspection;
--- Part 4: Highly Accelerated Steady State Damp Heat Test (HAST);
--- Part 11: Rapid temperature change double tank method;
--- Part 12: Frequency sweep vibration;
--- Part 13: Salt spray;
--- Part 14: Terminal strength (lead fastness);
--- Part 15: Resistance to soldering heat of through-hole mounted devices;
--- Part 17: Neutron irradiation;
--- Part 18: Ionizing radiation (total dose);
--- Part 19: Chip shear strength;
--- Part 20: Plastic-encapsulated surface mount devices are resistant to the combined effects of moisture and soldering heat;
--- Part 20-1: Handling, packaging, marking and transportation of surface mount devices sensitive to the combined effects of moisture and soldering heat;
--- Part 21: Solderability;
--- Part 22: Bonding strength;
--- Part 23: High temperature working life;
--- Part 26: Electrostatic discharge (ESD) susceptibility test Human body model (HBM);
--- Part 27: Electrostatic discharge (ESD) susceptibility test machine model (MM);
--- Part 30: Pretreatment of non-hermetic surface mount devices before reliability tests;
--- Part 31: Flammability of plastic encapsulated devices (internal causes);
--- Part 32: Flammability of plastic encapsulated devices (external causes);
--- Part 42: Temperature and humidity storage:
This document is equivalent to IEC 60749-23:2011 "Mechanical and climatic test methods for semiconductor devices - Part 23: High temperature operation
life":
The following minimal editorial changes have been made to this document:
--- Added Appendix NA (informative):
Please note that some contents of this document may refer to patents: The issuing agency of this document assumes no responsibility for identifying patents:
This document is proposed by the Ministry of Industry and Information Technology of the People's Republic of China:
This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78):
This document is drafted by: The Thirteenth Research Institute of China Electronics Technology Group Corporation, Hebei Beixin Semiconductor Technology Co:, Ltd:, Chizhou Xin'an
Electronic Technology Co:, Ltd:, Hebei Zhongdian Kehang Testing Technology Service Co:, Ltd:, Beijing Saidi Junxin Electronic Product Testing Laboratory Co:, Ltd:
Division, Guangdong Kexin Electronics Co:, Ltd:, Foshan Chuandong Magnetic Electric Co:, Ltd:
The main drafters of this document: Ran Honglei, Zhang Kui, Zhang Zhongxiang, Huang Jie, Peng Hao, Wei Bing, Yin Lijing, Xu Xin, Ke Hanzhong, Yan Tianbao, Liu Yinyan:
Introduction
Semiconductor devices are common basic products in the electronics industry chain and are the most basic units in electronic systems: GB/T 4937 "Semiconductors
Mechanical and Climatic Test Methods for Bulk Devices" is the basic and universal standard for testing semiconductor devices:
The quality and reliability of the device play an important role, and it is proposed to be composed of 44 parts:
--- Part 1: General: The purpose is to specify general guidelines for mechanical and climatic test methods for semiconductor devices:
--- Part 2: Low air pressure: The purpose is to detect the ability of components and materials to avoid electrical breakdown failure:
--- Part 3: External visual inspection: The purpose is to detect whether the material, design, structure, marking and process quality of semiconductor devices meet the
Purchasing Documentation Requirements:
--- Part 4: Strongly Accelerated Steady State Damp Heat Test (HAST): The purpose is to specify the highly accelerated steady state damp heat test (HAST) to detect
Test the reliability of non-hermetic packaged semiconductor devices in humid environment:
--- Part 5: Steady-state temperature and humidity bias life test: The purpose is to specify the steady-state temperature and humidity bias life test to detect non-airtight
Reliability of packaged semiconductor devices in wet environments:
--- Part 6: High temperature storage: The purpose is to detect the influence of high temperature storage on semiconductor devices without applying electrical stress:
--- Part 7: Internal water vapor measurement and other residual gas analysis: The purpose is to detect the quality of the packaging process and provide relevant
information on the long-term chemical stability of the body in the shell:
--- Part 8: Sealing: The purpose is to detect the leak rate of semiconductor devices:
--- Part 9: Sign durability: The purpose is to test the durability of marks on semiconductor devices:
--- Part 10: Mechanical shock: The purpose is to test the suitability of semiconductor devices and printed board assemblies to withstand moderately severe shocks
ability:
--- Part 11: Rapid temperature change double tank method: The purpose is to specify the rapid temperature change of semiconductor devices (double tank method)
Test procedures, failure criteria, etc:
--- Part 12: Frequency sweep vibration: The purpose is to detect the impact of vibration on semiconductor devices within the specified frequency range:
--- Part 13: Salt spray: The purpose is to detect the corrosion resistance of semiconductor devices:
--- Part 14: Terminal strength (lead fastness): The purpose is to detect the lead/package interface of semiconductor devices and the firmness of leads:
Solidity:
--- Part 15: Resistance to soldering heat of through-hole mounted devices: The purpose is to test the vibration of through-hole mounted solid-state packaged semiconductor devices
The ability of peak soldering or soldering iron soldering leads to generate thermal stress:
--- Part 16: Particle collision noise detection (PIND): The purpose is to specify the detection method for the presence of free particles in cavity devices:
--- Part 17: Neutron irradiation: The purpose is to examine the susceptibility of semiconductor devices to performance degradation in a neutron environment:
--- Part 18: Ionizing radiation (total dose): The purpose is to provide for the assessment of the impact of low dose rate ionizing radiation on semiconductor devices:
Rapid annealing test method:
--- Part 19: Chip shear strength: The purpose is to detect the materials and processes used to mount semiconductor chips on sockets or substrates:
completeness of the process steps:
--- Part 20: Plastic surface mount devices resistance to combined effects of moisture and soldering heat: The purpose is to store in warehouse or dry by simulating
The moisture absorbed by plastic-encapsulated surface-mounted semiconductor devices in a dry packaging environment was evaluated to evaluate its resistance to soldering heat:
--- Part 20-1: Handling, packaging, marking and transportation of surface mount devices sensitive to the combined effects of moisture and soldering heat: Purpose
It is to regulate the operation, packaging, transportation and use of plastic-encapsulated surface-mounted semiconductor devices that are sensitive to the combined effects of moisture and soldering heat
method:
--- Part 21: Solderability: The purpose is to specify the lead-out terminals of component packages that are soldered with lead-tin solder or lead-free solder:
Solderability test procedure:
--- Part 22: Bonding strength: The purpose is to detect the bonding strength of semiconductor devices:
--- Part 23: High temperature working life: The purpose is to specify the effects of bias conditions and temperature on solid-state devices over time:
experiment method:
--- Part 24: Accelerated humidity unbiased strong accelerated stress test: The purpose is to test non-hermetic packaged solid-state devices in humid environment
environment reliability:
--- Part 25: Temperature cycle: The purpose is to detect semiconductor devices, components and circuit board assemblies subjected to extreme high temperatures and extreme
The ability of low temperature alternating action to induce mechanical stress:
--- Part 26: Electrostatic discharge (ESD) susceptibility test Human body model (HBM): The purpose is to specify reliable, repeatable
HBMESD test method:
--- Part 27: Electrostatic discharge (ESD) susceptibility test machine model (MM): The purpose is to specify reliable, repeatable
MMESD test method:
--- Part 28: Electrostatic discharge (ESD) susceptibility testing Charged Device Model (CDM) device level: The purpose is to provide
Reliable and repeatable CDMESD test method:
--- Part 29: Latch-up test: The purpose is to specify the method of detecting the latch-up characteristics of integrated circuits and the failure criterion of the latch:
--- Part 30: Pretreatment of non-hermetic surface mount devices before reliability testing: Intended to specify unsealed surface mount
Standard procedure for preconditioning components before reliability testing:
--- Part 31: Flammability of plastic encapsulated devices (internal causes): The purpose is to detect whether the plastic packaged device is caused by overload
Burning with heat:
--- Part 32: Flammability of plastic encapsulated devices (external causes): The purpose is to detect whether the plastic packaged device is caused by external heating
combustion:
--- Part 33: Accelerated moisture-resistant unbiased high-pressure cooking: The purpose is to identify the internal failure mechanisms of semiconductor device packages:
--- Part 34: Power cycle: The purpose is to detect the
To measure the thermal and mechanical stress resistance of semiconductor devices:
--- Part 35: Acoustic microscopy of plastic packaged electronic components: The purpose is to specify the accuracy of acoustic microscopes for plastic-encapsulated electronic components
Methods for performing defect (lamination, cracks, voids, etc:) detection:
--- Part 36: Steady-state acceleration: The purpose is to specify the test method for the steady-state acceleration of cavity semiconductor devices in order to detect their junction
Structural and mechanical type defects:
--- Part 37: Board-level drop test methods using accelerometers: The purpose is to specify the board level drop test using accelerometer
method, the drop test of surface mount devices can be repeatedly detected, and the common failure modes during product level testing can be reproduced at the same time:
--- Part 38: Soft error test methods for semiconductor devices with memory: The purpose is to specify the operation of semiconductor devices with memory
Test method for soft error susceptibility in energetic particle environments (e:g: alpha radiation):
--- Part 39: Measurement of moisture diffusivity and water solubility of organic materials for semiconductor devices: The purpose is to specify the application of semiconductor
Method for measuring moisture diffusivity and water solubility of organic materials for bulk device packaging:
--- Part 40: Board-level drop test methods using strain gauges: The purpose is to specify the board level drop test method using strain gauges:
This method enables repeatable testing of surface mount device drop tests while reproducing common failure modes during product-level testing:
--- Part 41: Non-volatile memory reliability test methods: The purpose is to specify the effective endurance, data
According to the requirements of maintenance and temperature cycle test:
--- Part 42: Temperature and humidity storage: The purpose is to specify the test method for testing the ability of semiconductor devices to withstand high temperature and high humidity environments:
--- Part 44: Neutron irradiation single event effects (SEE) test methods for semiconductor devices: The purpose is to specify the detection of high-density set
Test method for single event effect (SEE) of integrated circuits:
GB/T 4937 (all parts) is a one-to-one correspondence with IEC 60749 (all parts) to ensure that the test methods of semiconductor devices are consistent with those of the national
Consistent with international standards, to achieve semiconductor device inspection methods, reliability evaluation, and quality levels in line with international standards: Through the development of this standard, it is determined that the unified
Test methods and stresses, and improve the standard system of semiconductor devices:
Mechanical and climatic test methods for semiconductor devices
Part 23: High temperature working life
1 Scope
This document describes test methods for the effects of bias conditions and temperature on solid-state devices over time: The test is an accelerated life modulus
It is mainly used for device identification and reliability inspection: Short-term high-temperature bias life is usually called aging, which can be used for screening
Eliminate early failure products in the selection test: Detailed requirements and applications for aging are not specified in this document:
2 Normative references
The contents of the following documents constitute the essential provisions of this document through normative references in the text: Among them, dated references
For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to
this document:
Note: The degree of consistency between the national standard and the various parts of IEC 60747 (all parts) is shown in Appendix NA:
IEC 60749-34 Mechanical and climatic test methods for semiconductor devices Part 34: Power cycle (Semiconductor
3 Terms and Definitions
The following terms and definitions apply to this document:
3:1
The maximum supply voltage for device operation as specified in the device specification or data sheet:
3:2
The maximum voltage that can be applied to a device beyond which damage (latent or otherwise) may occur:
Note: For a specific device and (or) process, the absolute maximum rated voltage is generally specified by the device manufacturer:
3:3
The maximum junction temperature allowed for a device to operate beyond which damage (latent or otherwise) may occur:
Note 1: For a specific device and (or) process, the absolute maximum rated junction temperature is generally specified by the device manufacturer:
Note 2: For a specific package, the manufacturer may also specify the maximum case temperature:
4 Test equipment
The test equipment can provide the test conditions required for the test samples:
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