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GB/T 42709.5-2023: Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches
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Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches
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GB/T 42709.5-2023
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Basic data | Standard ID | GB/T 42709.5-2023 (GB/T42709.5-2023) | | Description (Translated English) | Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L40 | | Classification of International Standard | 31.200 | | Word Count Estimation | 33,371 | | Date of Issue | 2023-05-23 | | Date of Implementation | 2023-09-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 42709.5-2023: Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches
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ICS 31:200
CCSL40
National Standards of People's Republic of China
Semiconductor Devices Micro-Electro-Mechanical Devices
Part 5: RF MEMS switches
Part 5:RFMEMSswitches
(IEC 62047-5:2011, IDT)
Released on 2023-05-23
2023-09-01 implementation
State Administration for Market Regulation
Released by the National Standardization Management Committee
table of contents
Preface III
Introduction IV
1 Scope 1
2 Normative references 1
3 Terms and Definitions 1
3:1 Switching terminology 2
3:2 Switch Structure Terminology 2
3:3 Terminology of drive mode 2
3:4 Switch Network Structure Terminology 2
3:5 Reliability Terminology 3
3:6 Terminology of electrical characteristics 3
4 Basic ratings and characteristics 5
4:1 Identification and type description 5
4:2 Applications and Specifications 5
4:3 Limit values and operating conditions 5
4:4 DC and RF characteristics 6
4:5 Mechanical and environmental characteristics 6
4:6 Additional information 6
5 Test method 6
5:1 General 6
5:2 DC characteristics 7
5:3 Radio frequency characteristics 10
5:4 Switching characteristics 14
6 Reliability14
6:1 General 14
6:2 Life cycle 15
6:3 Temperature cycling 16
6:4 High temperature and high humidity test 16
6:5 Impact test 17
6:6 Vibration test 17
6:7 Electrostatic discharge susceptibility test 17
Appendix A (Informative) General Description of RF MEMS Switches 18
Appendix B (Informative) Geometry of RF MEMS Switches 19
Appendix C (Informative) Encapsulation of RF MEMS Switches 22
Appendix D (Informative) Failure Mechanism of RF MEMS Switches 23
Appendix E (Informative) Applications of RF MEMS Switches 24
Appendix F (Informative) Test Procedures for RF MEMS Switches 25
Appendix NA (informative) This document is compared with IEC 62047-5:2011 chapter number 26
foreword
This document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents"
drafting:
This document is part 5 of GB/T 42709 "Microelectronic Mechanical Devices for Semiconductor Devices": GB/T 42709 has been issued with
Lower part:
--- Part 5: RF MEMS switches;
--- Part 7: MEMS bulk acoustic wave filters and duplexers for radio frequency control and selection;
--- Part 19: Electronic compass:
This document is equivalent to IEC 62047-5:2011 "Microelectronic Mechanical Devices for Semiconductor Devices Part 5: RF MEMS
switch":
The following minimal editorial changes have been made to this document:
--- Incorporate the clauses involved in the contents of the IEC 62047-5:2011/Cor1:2012 errata:
Double lines (‖) are marked:
--- Added Appendix NA (informative):
Please note that some contents of this document may refer to patents: The issuing agency of this document assumes no responsibility for identifying patents:
This document is proposed and managed by the Ministry of Industry and Information Technology of the People's Republic of China:
This document is drafted by: China Institute of Electronics Standardization, China Electronics Corporation, Peking University, Beijing Bi
Chuang Technology Co:, Ltd:, Hebei Mattel Electronic Technology Co:, Ltd:
The main drafters of this document: Liu Ruobing, Li Bo, Zhang Wei, Chen Demin, Cui Bo, Zhai Xiaofei:
Introduction
This document is applicable to RF MEMS switches, and specifies the terms, definitions,
Symbols and parameter testing methods, etc:, are conducive to better guiding practitioners in related industries in product development, testing, and use:
GB/T 42709 "Microelectronic Mechanical Devices for Semiconductor Devices" is proposed to consist of the following parts:
--- Part 2: Tensile test methods for film materials: The purpose is to specify the tensile test method for MEMS thin film materials:
--- Part 3: Film standard test piece for tensile test: The purpose is to specify test pieces for tensile testing of MEMS thin film materials
related requirements:
--- Part 5: RF MEMS switches: The purpose is to specify the term definitions, characteristic requirements, and testing methods of RF MEMS switches:
law etc:
--- Part 6: Thin film material axial fatigue test method: The purpose is to specify the axial fatigue test of MEMS thin film materials
method:
--- Part 7: MEMS bulk acoustic wave filters and duplexers for radio frequency control and selection: The purpose is to specify the MEMS body
Definition of terms, characteristic requirements, test methods, etc: of acoustic wave resonators, filters and duplexers:
--- Part 8: Strip bending test method for the measurement of film tensile properties: The purpose is to specify the method used to measure the tensile properties of films
Strip bend test method:
--- Part 9: MEMS wafer bonding strength test method: The purpose is to specify the bonding strength test method for MEMS wafers:
--- Part 11: Test method for linear thermal expansion coefficient of suspended MEMS materials: The purpose is to specify the
Test method for coefficient of linear thermal expansion:
--- Part 12: Flexural fatigue test method for thin film materials using MEMS structural resonance method: The purpose is to specify MEMS thin
Membrane material flexural fatigue test method:
--- Part 13: MEMS structure adhesion strength test method: The purpose is to specify the adhesion strength test of MEMS structure
method:
--- Part 16: Wafer curvature and cantilever beam deflection test method for MEMS film residual stress: The purpose is to stipulate
Two test methods of wafer curvature and cantilever beam deflection for MEMS film residual stress:
--- Part 19: Electronic compass: The purpose is to specify the term definitions, characteristic requirements, test methods, etc: of the electronic compass:
--- Part 21: MEMS thin film material Poisson's ratio test method: The purpose is to specify the Poisson's ratio test of MEMS thin film materials
method:
--- Part 22: Electromechanical tensile test methods for conductive films on flexible substrates: The purpose is to specify the characteristics of MEMS conductive thin film materials
Tensile test method for electromechanical properties:
--- Part 26: Description and test methods of micro-grooves and needle structures: The purpose is to specify the description of MEMS microgroove and needle structure
description and test methods:
--- Part 27: MCT test method for bond strength of glass fused structures: The purpose is to specify the bond strength of the glass frit structure
Degree of MCT test method:
--- Part 29: Test method for electromechanical relaxation of suspended conductive films at room temperature: The purpose is to specify the suspended conductance of MEMS devices
Test method for electromechanical relaxation of electromechanical thin films at room temperature:
--- Part 32: MEMS resonator nonlinear vibration test method: The purpose is to specify the nonlinear vibration of MEMS resonators
performance testing method:
--- Part 35: Test methods for electrical characteristics of flexible electromechanical devices bending deformation: The purpose is to specify the bending deformation of flexible electromechanical devices
State electrical characteristics test method:
--- Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric films: The purpose is to specify the MEMS piezoelectric film
Environmental and dielectric withstand performance test methods:
--- Part 38: Test method for adhesion strength of metal powder paste in MEMS interconnection: The purpose is to specify the gold in the MEMS interconnection
It is a test method for the adhesion strength of powder paste:
--- Part 40: MEMS inertial shock switch threshold test method: The purpose is to specify the threshold of MEMS inertial shock switch
Test Methods:
Semiconductor Devices Micro-Electro-Mechanical Devices
Part 5: RF MEMS switches
1 Scope
This document defines the terms, definitions and symbols used to evaluate and determine the basic ratings and characteristics of RF MEMS switches, and describes
Parameter test method:
This document is applicable to various types of RF MEMS switches: See Appendix A for general descriptions of RF MEMS switches: by contact
Classification, including DC contact type switch and capacitive contact type switch; classification by structure, including series switch and parallel switch, RF MEMS switch
See Appendix B for the description of the geometric structure of the switch; according to the classification of the switch network, it includes single-pole single-throw switches, single-pole double-throw switches, and double-pole double-throw switches;
Classification of drive methods, including electrostatic drive switches, thermoelectric drive switches, electromagnetic drive switches, and piezoelectric drive switches: RF MEMS Switches
In multi-band or multi-mode mobile phones, smart radar systems, reconfigurable RF devices and systems, SDR (software defined radio) phones, test equipment
It is widely used in equipment, tunable devices and systems, satellites, etc: For the application description of RF MEMS switches, see Appendix E:
2 Normative references
The contents of the following documents constitute the essential provisions of this document through normative references in the text: Among them, dated references
For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to
this document:
GB/T 4937:12-2018 Mechanical and climatic test methods for semiconductor devices Part 12: Frequency sweep vibration (IEC 60749-12:
2002, IDT)
GB/T 4937:27-2023 Mechanical and climatic test methods for semiconductor devices Part 27: Electrostatic discharge (ESD) susceptibility
Test mechanical model (MM) (IEC 60749-27:2012, IDT)
Note: GB/T 20870:1-2007 Semiconductor Devices Part 16-1: Microwave Integrated Circuit Amplifiers (IEC 60747-16-1:2001, IDT)
IEC 60749-5:20171) Mechanical and climatic test methods for semiconductor devices Part 5: Steady-state temperature and humidity bias life test
midity bias life test)
1) IEC 60749-5:2004 is replaced by the current version, and the referenced content has no technical difference:
2) IEC 60749-10:2002 is replaced by the current version, and the referenced content has no technical difference:
3 Terms and Definitions
The following terms and definitions apply to this document:
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