|
US$294.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email.
GB/T 45719-2025: Semiconductor devices - Hot carrier test on metal-oxide semiconductor (MOS) transistors
Status: Valid
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 45719-2025 | English | 294 |
Add to Cart
|
3 days [Need to translate]
|
Semiconductor devices - Hot carrier test on metal-oxide semiconductor (MOS) transistors
| Valid |
GB/T 45719-2025
|
PDF similar to GB/T 45719-2025
Basic data | Standard ID | GB/T 45719-2025 (GB/T45719-2025) | | Description (Translated English) | Semiconductor devices - Hot carrier test on metal-oxide semiconductor (MOS) transistors | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L40 | | Classification of International Standard | 31.080.01 | | Word Count Estimation | 14,172 | | Date of Issue | 2025-05-30 | | Date of Implementation | 2025-09-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 45719-2025: Semiconductor devices - Hot carrier test on metal-oxide semiconductor (MOS) transistors
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.080.01
CCSL40
National Standard of the People's Republic of China
Semiconductor Device Metal Oxide Semiconductor (MOS)
Hot carrier testing of transistors
transistors
transistors,IDT)
Released on 2025-05-30
2025-09-01 Implementation
State Administration for Market Regulation
The National Standardization Administration issued
Table of contents
Preface III
1 Scope 1
2 Normative references 1
3 Terms and Definitions 1
4 Symbols and abbreviations 1
5 Test Structure 2
6 Stress time 2
7 Stress conditions 2
8 Sample size 3
9 Temperature 3
10 Failure criteria 3
11 Lifetime Assessment Method 3
12 Lifetime requirements 4
13 Report 4
References 6
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents"
Drafting.
This document is equivalent to IEC 62416.2010 "Hot carrier test for MOS transistors in semiconductor devices".
This document adds two chapters. “Normative References” and “Terms and Definitions”.
The following minimal editorial changes were made to this document.
--- In order to coordinate with the existing standards, the name of the standard is changed to "Thermal
Carrier Experiment.
Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.
This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).
This document was drafted by. the Fifth Electronic Research Institute of the Ministry of Industry and Information Technology, Xidian University, National University of Defense Technology, Hebei Beixin Semiconductor
Conductor Technology Co., Ltd. and the 58th Electronic Research Institute of China Electronics Technology Group Corporation.
The main drafters of this document are. Lu Guoguang, Zhang Xiaowen, Lin Xiaoling, You Hailong, Yang Shaohua, Peng Chao, Xiao Qingzhong, Wei Qinru, Lai Ping, Liang Bin,
Zhang Kui, Zhao Wenbin, and Jin Lihua.
Semiconductor Device Metal Oxide Semiconductor (MOS)
Hot carrier testing of transistors
1 Scope
This document describes a hot carrier test method for NMOS and PMOS transistors at the wafer level. The purpose of this test is to determine the
Whether the individual transistors in the process meet the required lifetime of hot carrier injection effects.
2 Normative references
This document has no normative references.
3 Terms and definitions
There are no terms or definitions that require definition in this document.
4 Symbols and abbreviations
The following symbols and abbreviations apply to this document.
(C)MOS. Complementary MOS.
gm(μA/V). transconductance of MOS transistor.
gm,max(μA/V). Maximum transconductance of MOS transistor.
gm,max(MOST). gm,max(L=W) of square MOS transistor.
Ib (μA). substrate current of MOS transistor.
Ids(μA). drain-source current of MOS transistor.
Ids,sat (μA). saturated drain-source current when Vgs = Vds = Vds,use_max; measured without changing the source and drain during stress.
Ids,sat_forward is measured, and Ids,sat_reverse is measured under the condition of changing the positions of the source and drain.
Ig(nA). Gate current of MOS transistor.
L(μm). The length of the gate of a MOS transistor.
L(MOST). The length of a square MOS transistor (L=W).
Leff (μm). The effective electrical channel length of a MOS transistor. For a given channel length L, Leff is determined by the large square MOS transistor.
gm,max is determined (W=L≫Lnominal).
Lnominal (μm). The minimum length allowed by process design rules.
MOS. Metal Oxide Semiconductor.
NMOS. n-channel MOS transistor.
PMOS. p-channel MOS transistor.
τ(s)Τ. Lifetime of MOS transistor.
Vbs(V). Body-source voltage of MOS transistor.
Vds(V). drain-source voltage of MOS transistor.
Vgs(V). Gate-source voltage of MOS transistor.
Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 45719-2025_English be delivered?Answer: Upon your order, we will start to translate GB/T 45719-2025_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time. Question 2: Can I share the purchased PDF of GB/T 45719-2025_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 45719-2025_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet. Question 3: Does the price include tax/VAT?Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countriesQuestion 4: Do you accept my currency other than USD?Answer: Yes. If you need your currency to be printed on the invoice, please write an email to [email protected]. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.
|