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Std ID |
Description (Standard Title) |
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SJ 21349-2018
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(Erbium-doped inorganic oxide scintillation crystal specification)
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SJ 21351-2018
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Process technological requirements for raw material preparation of the cerium doped inorganic oxide scintillation crystals
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SJ 21352-2018
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Process technological requirements for the cerium doped inorganic oxide scintillation crystal growths
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SJ 21353-2018
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Process technological requirements for the cerium doped inorganic oxide scintillation crystals
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SJ 21442-2018
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(GaN-based SI type semi-insulating gallium nitride single wafer specification)
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SJ 21443-2018
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(GaN-N type low resistance gallium nitride single wafer specification)
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SJ 21444-2018
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Specification for gallium oxide monocrystalline wafers of β-Ga203-N
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SJ 21445-2018
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(CdS-N type infrared/ultraviolet two-color detection cadmium sulfide single wafer specification)
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SJ 21446-2018
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(CdS-N-T type cadmium sulfide single wafer specification for infrared/ultraviolet two-color detection)
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SJ 21447-2018
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Specification for cadmium selenide monocrystal of CdSe-N-T01 used for infrared solid state laser
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SJ/Z 21350-2018
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(Erbium-doped silicate scintillation crystal design guide)
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SJ 21475-2018
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(Indium phosphide single wafer geometric parameter test method)
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SJ 21476-2018
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Technical requirements for annealing of InP single crystal
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SJ 21477-2018
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Technical requirements for InP poly crystal synthesis process
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SJ 21478-2018
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(Indium phosphide single crystal growth process technical requirements)
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SJ 21479-2018
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(Indium phosphide wafer grinding process technical requirements)
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SJ 21486-2018
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Specification for hydrosphere sealing composite conductive rubber strip
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SJ 21487-2018
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(Electromagnetic shielding heat shrinkable tube specification)
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SJ 21488-2018
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(Rubber based absorber specification)
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SJ 21489-2018
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Specification for electric heating shielding glass for display screen
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SJ 21490-2018
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(Multi-layer co-fired ceramics manufacturing process route design requirements)
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SJ 21491-2018
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(Multi-layer co-fired ceramics)
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SJ 21492-2018
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(Multi-layer co-fired ceramic blasting technology requirements)
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SJ 21493-2018
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Test method of surface defects for silicon carbide epitaxial wafers
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SJ 21534-2018
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Specification of gallium nitride epitaxial wafer for microwave power transistor
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SJ 21535-2018
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Specification of silicon carbide epitaxial wafer for power electronic device
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SJ 21536-2018
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Specification of gallium arsenide epitaxial wafer for microwave power devices and monolithic microwave integrated circuits
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SJ 20444A-2018
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(Specification of lithium niobate single crystal)
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SJ 21120-2016
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(Specification for semi - insulating gallium arsenide polishing sheet for high electron mobility transistors)
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SJ 21121-2016
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(Specification for PVTCdSN1/T-BP01 type cadmium sulfide single crystal polishing sheet)
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SJ/T 11487-2015
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Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer
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SJ/T 11488-2015
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Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals
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SJ/T 11489-2015
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Test method for measuring etch pit density (EPD) in low dislocation density indium phosphide wafers
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SJ/T 11490-2015
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Test method for measuring etch pit density (EPD) in low dislocation density gallium arsenide wafers
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SJ/T 11492-2015
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Test methods for measurement of composition of gallium arsenide phosphide wafers by photoluminescence
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SJ/T 11496-2015
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Determination of boron concentration in gallium arsenide by infrared absorption
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SJ/T 11497-2015
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Test method for thermal stability testing of gallium arsenide wafers
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SJ/T 11499-2015
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Test method for measuring electrical properties of monocrystalline silicon carbide
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SJ/T 11500-2015
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Test method for measuring crystallographic orientation of monocrystalline silicon carbide
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SJ/T 11501-2015
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Test method for determining crystal type of monocrystalline silicon carbide
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SJ/T 11502-2015
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Specification for polished monocrystalline silicon carbide wafers
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SJ/T 11503-2015
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Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers
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SJ/T 11504-2015
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Test method for measuring surface quality of polished monocrystalline silicon carbide
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SJ/T 11505-2015
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Sapphire single crystal polished wafers specification
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SJ/T 11470-2014
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(Light-emitting diode epitaxial wafers)
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SJ/T 11471-2014
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Measurement methods for epitaxial wafers of light-emitting diodes
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SJ/T 11396-2009
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The sapphire substrates for nitride based light-emitting diode
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SJ 20866-2003
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Specification for cross-pressing molybdenum-rhenium alloy pieces
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SJ 20714-1998
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Test method for sub-surface damage of gallium arsenide polished wafer by X-ray double crystal diffraction
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SJ 20635-1997
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Test method for residual impurities concentration in microzone of semi-insulating gallium arsenide
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SJ 2593-1985
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Pure silicon tetrachloride
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SJ 3241-1989
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Gallium arsenide single-crystal bar and wafer
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SJ/Z 1610-1980
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(Silicon wafer defect Atlas)
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SJ 1549-1979
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Silicon epitaxial wafers (Provisional)
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SJ/T 11994-2025
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Portable photovoltaic panel
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SJ 21441-2018
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Specification for high purity semi-insulating silicon carbide monocrystalline wafers of SiC-HPSI
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SJ 20514A-2018
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(Specification for silicon epitaxial wafers for microwave power transistors)
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SJ 21122-2016
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(Specification for PVTSiC76SI1-BP01 type silicon carbide single crystal polishing sheet)
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SJ/T 11491-2015
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Test methods for measurement of interstitial oxygen content in silicon by short baseline infrared absorption spectrometry
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SJ/T 11493-2015
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Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry
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SJ/T 11494-2015
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Test methods for photoluminescence analysis of single crystal silicon for III-V impurities
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SJ/T 11495-2015
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Guide to conversion factors for interstitial oxygen in silicon
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SJ/T 11498-2015
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Test method for measuring oxygen contamination in heavily doped silicon substrates by secondary ion mass spectrometry
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SJ/T 11552-2015
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(In Brewster angle incidence P polarized radiation of infrared absorption spectroscopy measurements interstitial oxygen in silicon)
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SJ 20858-2002
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Measuring methods for electrical parameters of silicon carbide single crystal material
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SJ 20718-1998
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Method of determination trace elements in mercury cadmium telluride crystal
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SJ 20719-1998
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Method of determination X value for mercury cadmium telluride for use in X-ray fluorimetry
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SJ 20514-1995
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Specification for silicon epitaxial wafer for microwave power transistor
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SJ/T 10627-1995
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Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
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SJ 2572-1985
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Single crystal silicon rods and wafers for solar cells
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SJ 20636-1997
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Test method for oxygen and carbon contents of large diameter thin silicon wafer in microzone for use in IC
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SJ 1550-1979
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Method of inspection for silicon epitaxial wafers
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SJ 1551-1979
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Method of measurement for resistivity of silicon epitaxial layer (capacitance-voltage method) (Provisional)
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SJ 20744-1999
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General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials
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SJ 20713-1998
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Method for the determination of 12 species of impurities including copper, manganese, magnesium, vanadium, titanium in high-purity gallium used for gallium arsenide by ICP spectrometry
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SJ/T 10379-1993
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Method for the determination of thorium dioxide in thorium tungsten alloys
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SJ/T 11364-2024
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Labeling requirements for restricted use of hazardous substances in electrical and electronic products
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SJ 20513-1995
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Specificatin for tungsten strip for military tube
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SJ 20599-1996
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Specification for winding-tensile tungsten wires
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SJ/T 10743-1996
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Ceriated tungsten electrodes for inert gas arc welding and plasma welding and cutting
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SJ/T 10744-1996
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Special technical terms in production of tungsten and molybdenum wires
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SJ 324-1972
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Molybdenum plates
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SJ 20715-1998
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Specification for copper-beryllium alloy plate and strip for use in electronic components
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SJ 20716-1998
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Specification for copper-beryllium wire and bor for use in electronic components
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SJ 1543-1988
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Method for spectral analysis of Nickel and Nickel aloy for vacuum tubes
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SJ 1538-1987
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Compositions of Nickel and Nickel alloy for vacuum tubes
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SJ 1539-1987
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Nickel and Nickel alloy bars for vacuum tubes
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SJ 1540-1987
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Nickel and Nickel alloy wires for use in vacuum devices
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SJ 1541-1987
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Nickel and Nickel alloy strips for vacuum tubes
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SJ 1538-1979
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(Chinese Industry Standard)
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SJ 1539-1979
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(Chinese Industry Standard)
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SJ 1540-1979
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(Chinese Industry Standard)
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SJ 1541-1979
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(Chinese Industry Standard)
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SJ 1543-1979
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(Chinese Industry Standard)
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SJ/Z 1544-1979
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Method for spectral analysis of Nickel-- Tungsten-Magnesium alloy
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SJ 20500-1995
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General specification for sandwich panels of shelters
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SJ/T 11627-2016
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(Solar wafers rate online Test methods Resistance)
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SJ/T 11628-2016
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(Solar cell line characterization test method with die size and electrical)
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SJ/T 11629-2016
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(Solar wafers and cells online photoluminescence analysis)
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SJ/T 11630-2016
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(Solar-wafer geometry test method)
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