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SJ 20636-1997 English PDF

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SJ 20636-1997: Test method for oxygen and carbon contents of large diameter thin silicon wafer in microzone for use in IC
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SJ 20636-1997English359 Add to Cart 3 days [Need to translate] Test method for oxygen and carbon contents of large diameter thin silicon wafer in microzone for use in IC SJ 20636-1997

PDF similar to SJ 20636-1997


Standard similar to SJ 20636-1997

GB/T 12963   GB/T 16596   SJ/T 11488   

Basic data

Standard ID SJ 20636-1997 (SJ20636-1997)
Description (Translated English) Test method for oxygen and carbon contents of large diameter thin silicon wafer in microzone for use in IC
Sector / Industry Electronics Industry Standard
Classification of Chinese Standard H81
Word Count Estimation 9,959
Date of Issue 6/17/1997
Date of Implementation 10/1/1997
Quoted Standard GB 1558-83; GB/T 14143-93
Summary This standard specifies O. 3 ~ 2. 0mm thickness of silicon wafers in the oxygen content of the micro-gap and radial distribution of substitutional carbon content of micro-measurement method. This standard common to room temperature resistivity greater than 0. 1��cm gap silicon wafer containing oxygen radial distribution of most micro and substitutional carbon content was measured microdomains. Measuring range, for interstitial oxygen content of 3. 0 �� 10 ^ (16) at. cm ^ (- 3) to the maximum solid solubility of interstitial oxygen in silicon; substitutional carbon content for the most 5. 0 �� 10 ^ (15) at. cm ^ (- 3) to substitutional carbon in silicon maximum solubility.

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